JESD97
Abstract: L120NH02V STL120NH02V
Text: STL120NH02V N-channel 20V - 0.0025Ω - 120A - PowerFLAT 6x5 STripFET™ III Power MOSFET Target Specification General features Type VDSS RDS(on) ID STL120NH02V 20V <0.003Ω 28A(1) 1. Value limited by wire bonding • Improved die-to-footprint ratio
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STL120NH02V
STL120NH02V
JESD97
L120NH02V
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schematic diagram reverse forward motor
Abstract: STB210NF02 STB210NF02-1 STB210NF02T4 STP210NF02
Text: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB210NF02/-1 STP210NF02 • ■ ■ VDSS RDS on ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(*) 120 A(*) TYPICAL RDS(on) = 0.0026Ω
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STP210NF02
STB210NF02
STB210NF02-1
PAK/TO-220
STB210NF02/-1
O-262
O-263
schematic diagram reverse forward motor
STB210NF02-1
STB210NF02T4
STP210NF02
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STB210NF02
Abstract: STB210NF02-1 STB210NF02T4 STP210NF02
Text: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC • ■ ■ TYPE VDSS R DS on ID PD STB210NF02/-1 STP210NF02 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A 120 A 300 W 300 W
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STP210NF02
STB210NF02
STB210NF02-1
D2PAK/I2PAK/TO-220
STB210NF02/-1
O-262
O-263
STB210NF02-1
STB210NF02T4
STP210NF02
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Untitled
Abstract: No abstract text available
Text: STL120NH02V N-CHANNEL 20V - 0.0025Ω - 120A PowerFLAT 6X5 STripFET™ III MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STL120NH02V • ■ ■ ■ ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 20 V < 0.003 Ω 28 A (2) TYPICAL RDS(on) = 0.0025 Ω @ 4.5V
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STL120NH02V
STL120NH02V
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STB210NF02
Abstract: STB210NF02-1 STB210NF02T4 STP210NF02 p210n B210NF02
Text: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D²PAK/I²PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB210NF02/-1 STP210NF02 • ■ ■ VDSS RDS on ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(*) 120 A(*) TYPICAL RDS(on) = 0.0026Ω
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STP210NF02
STB210NF02
STB210NF02-1
PAK/TO-220
STB210NF02/-1
O-262
O-263
STB210NF02-1
STB210NF02T4
STP210NF02
p210n
B210NF02
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Untitled
Abstract: No abstract text available
Text: STP210NF02 STB210NF02 STB210NF02-1 N-CHANNEL 20V - 0.0026 Ω - 120A D PAK/I PAK/TO-220 STripFET II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE V DSS R DS on ID 20 V 20 V <0.0032 Ω <0.0032 Ω 120 A(*) 120 A(*) STB210NF02/-1 STP210NF02 • ■ ■ TYPICAL RDS(on) = 0.0026Ω
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PAK/TO-220
STB210NF02/-1
STP210NF02
STP210NF02
STB210NF02
STB210NF02-1
O-263
O-262
O-220
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IRL5602S
Abstract: No abstract text available
Text: PD- 91888 IRL5602S HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V RDS on = 0.042W G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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IRL5602S
IRL5602S
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*l5602s
Abstract: IRL5602S
Text: PD- 91888 IRL5602S HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V RDS on = 0.042W G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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IRL5602S
*l5602s
IRL5602S
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Untitled
Abstract: No abstract text available
Text: PD- 95099 IRL5602SPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free D VDSS = -20V RDS on = 0.042Ω G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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IRL5602SPbF
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD- 95099 IRL5602SPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free D VDSS = -20V RDS on = 0.042Ω G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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IRL5602SPbF
EIA-418.
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alternator diode 35a 9
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Applications Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode
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FDB8441
FDB8441
215nC
alternator diode 35a 9
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Untitled
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications ̈ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A ̈ Powertrain Management ̈ Typ Qg(10) = 215nC at VGS = 10V ̈ Solenoid and Motor Drivers ̈ Low Miller Charge ̈ Electronic Steering
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FDB8441
215nC
FDB8441
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FDB8441
Abstract: No abstract text available
Text: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 215nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers
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FDB8441
215nC
FDB8441
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Mosfet
Abstract: SSPL7508
Text: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and
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SSPL7508
25mohm
O-220
to175
Mosfet
SSPL7508
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p-channel Mosfet 110A
Abstract: UTT120P06
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120P06 Power MOSFET 120A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also
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UTT120P06
UTT120P06
O-220
UTT120P06L-TA3-T
UTT120P06G-TA3-T
QW-R502-728
p-channel Mosfet 110A
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UT120
Abstract: 54NC
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT120N03 Power MOSFET 120A, 30V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC UT120N03 is a N-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and superior switching performance.
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UT120N03
UT120N03
O-220
QW-R502-581
UT120
54NC
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT120N04 Power MOSFET 120A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT120N04 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed.
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UTT120N04
UTT120N04
UTT120N04L-TA3-T
UTT120N04G-TA3-T
UTT120N04L-TQ2-T
UTT120N04G-TQ2-T
UTT120N04L-TQ2-R
UTT120N04G-TQ2-R
QW-R502-793
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STP100NF04
Abstract: STB100NF04-1
Text: STP100NF04 STB100NF04-1 N-CHANNEL 40V - 0.0043Ω - 120A TO-220/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE STP100NF04 STB100NF04-1 • ■ ■ VDSS RDS on ID 40 V 40 V < 0.0046 Ω < 0.0046 Ω 120 A 120 A TYPICAL RDS(on) = 0.0043Ω STANDARD THRESHOLD DRIVE
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STP100NF04
STB100NF04-1
O-220/I2PAK
O-220
O-262)
STP100NF04
STB100NF04-1
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FDP053N08B
Abstract: No abstract text available
Text: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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AN-994
Abstract: IRF1405ZS-7P
Text: PD - 96905 AUTOMOTIVE MOSFET IRF1405ZS-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 4.9mΩ G ID = 120A
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IRF1405ZS-7P
AN-994
IRF1405ZS-7P
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Mosfet 75V 120A
Abstract: FDH055N15A MOSFET 20V 120A Power Mosfet 75V 120A
Text: FDH055N15A N-Channel PowerTrench MOSFET 150V, 167A, 5.9mΩ Features Description • RDS on = 4.8mΩ ( Typ.)@ VGS = 10V, ID = 120A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDH055N15A
FDH055N15A
Mosfet 75V 120A
MOSFET 20V 120A
Power Mosfet 75V 120A
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Untitled
Abstract: No abstract text available
Text: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced
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STB300NH02L
STP300NH02L
O-220
O-220
STP300NH02L
STB300N
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Untitled
Abstract: No abstract text available
Text: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced
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STB300NH02L
STP300NH02L
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: IR L R /U 120A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .2 2 a ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 4^ ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK
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IRLR/U120A
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