1E14
Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610
|
Original
|
JANSR2N7397
FSL234R4
R2N73
1E14
2E12
FSL234R4
JANSR2N7397
Rad Hard in Fairchild for MOSFET
hirel systems transformer
3OBE
|
PDF
|
Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,
|
Original
|
JANSR2N7401
FSS234R4
R2N74
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSS234R4
JANSR2N7401
|
PDF
|
1E14
Abstract: 2E12 FSL234R4 JANSR2N7397
Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7397
FSL234R4
1E14
2E12
FSL234R4
JANSR2N7397
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RCX100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCX100N25
320mW
O-220FM
R1120A
|
PDF
|
RCX100N25
Abstract: No abstract text available
Text: RCX100N25 RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCX100N25
320mW
O-220FM
R1120A
RCX100N25
|
PDF
|
12SW
Abstract: No abstract text available
Text: RCX100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCX100N25
320mW
O-220FM
R1120A
12SW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
JANSR2N7397
FSL234R4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCJ100N25
320mW
SC-83)
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCJ100N25
320mW
SC-83)
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RCJ100N25 RCJ100N25 Datasheet Nch 250V 10A Power MOSFET lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCJ100N25
320mW
SC-83)
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 320mW ID 10A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
|
Original
|
RCJ100N25
320mW
SC-83)
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
|
Original
|
STRH10N25ESY3
O-257AA
100kRad
34Mev/cm
O-257AA
|
PDF
|
12V ENERGY LIGHT CIRCUIT DIAGRAM
Abstract: STRH10N25ESY3
Text: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
|
Original
|
STRH10N25ESY3
O-257AA
100kRad
34Mev/cm
12V ENERGY LIGHT CIRCUIT DIAGRAM
STRH10N25ESY3
|
PDF
|
FDPF33N25
Abstract: No abstract text available
Text: UniFET TM FDPF33N25 250V N-Channel MOSFET Features Description • 20A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)
|
Original
|
FDPF33N25
O-22tion
FDPF33N25
|
PDF
|
|
|
C08N25
Abstract: No abstract text available
Text: RCD080N25 Nch 250V 8A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
|
Original
|
RCD080N25
300mW
SC-63)
OT-428>
C08N25
R1102A
C08N25
|
PDF
|
IRF 810
Abstract: AN1001 IRFR120 IRFR12N25D IRFU120 IRFU12N25D 220 110 transformer
Text: PD - 94296 IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
|
Original
|
IRFR12N25D
IRFU12N25D
AN1001)
AN-994.
IRF 810
AN1001
IRFR120
IRFR12N25D
IRFU120
IRFU12N25D
220 110 transformer
|
PDF
|
AN1001
Abstract: IRFR120 IRFR12N25D IRFU120 IRFU12N25D
Text: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
|
Original
|
4296A
IRFR12N25D
IRFU12N25D
AN1001)
AN-994.
AN1001
IRFR120
IRFR12N25D
IRFU120
IRFU12N25D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94296A IRFR12N25D IRFU12N25D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l VDSS 250V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
|
Original
|
4296A
IRFR12N25D
IRFU12N25D
AN1001)
AN-994.
|
PDF
|
IRHQ3214
Abstract: IRHQ4214 IRHQ7214 IRHQ8214
Text: PD - 93828A IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 250V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) RDS(on) 2.25Ω 2.25Ω ID
|
Original
|
3828A
IRHQ7214
LCC-28)
IRHQ3214
IRHQ4214
IRHQ8214
1000K
LCC-28
MIL-STD-750,
IRHQ3214
IRHQ4214
IRHQ7214
IRHQ8214
|
PDF
|
1E14
Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
FSL234D,
FSL234R
1E14
2E12
FSL234D
FSL234D1
FSL234D3
FSL234R
FSL234R1
FSL234R3
|
PDF
|
1E14
Abstract: 2E12 FSL23A4D FSL23A4D1 FSL23A4D3 FSL23A4R FSL23A4R1 FSL23A4R3 Rad Hard in Fairchild for MOSFET
Text: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS ON = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
FSL23A4D,
FSL23A4R
1E14
2E12
FSL23A4D
FSL23A4D1
FSL23A4D3
FSL23A4R
FSL23A4R1
FSL23A4R3
Rad Hard in Fairchild for MOSFET
|
PDF
|
FS10UM5
Abstract: FS10UM-5 08GS
Text: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 • V d s s . 250V • ros ON (MAX) . 0.52Í2 • Id . 10A
|
OCR Scan
|
FS10UM-5
FS10UM5
FS10UM-5
08GS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE FK20UM-5 • VDSS . 250V • rDS ON (MAX) . 0 .2 4 Î2 • Id . 20A
|
OCR Scan
|
FK20UM-5
150ns
1503C
571CH23
571CK
|
PDF
|
FS10KM5
Abstract: FS10kM-5
Text: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm • V dss .250V • rDS ON (MAX) . 0 .5 2 Í2
|
OCR Scan
|
FS10KM-5
571Q1
FS10KM5
FS10kM-5
|
PDF
|
