MOSFET 300W Search Results

MOSFET 300W Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 300W Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet 4702 Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942 Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts	Original	IXZ210N50L IXZ2210N50L 175MHz IXZ210N50L 175MHz mosfet 4702 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942	PDF
rf power mosfet Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings	Original	IXZ215N12L 175MHz rf power mosfet mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet	PDF
"RF MOSFET" 300W Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating	Original	IXZ12210N50L 175MHz 175MHz IXZ1210N50L dsIXZ12210N50L "RF MOSFET" 300W transistor tl 187 "RF MOSFETs" RF POWER MOSFET 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf	PDF
mosfet 4702 Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364 Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating	Original	IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L mosfet 4702 IXZ2210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364	PDF
IXZ2210N50L Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating	Original	IXZ210N50L IXZ2210N50L 175MHz 175MHz IXZ210N50L dsIXZ210N50L IXZ2210N50L "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF	PDF
"RF MOSFET" 300W Abstract: IXZH16N60 1 RF s 640 a 931 IXZ316N60 MOSFET QG mosfet 300w rf power mosfet Text: IXZH16N60 Z-MOS RF Power MOSFET N-ChannelEnhancement NChannel EnhancementMode Mode Switch Mode RF MOSFET Qg and Rg Low Capacitance Z-MOSTM MOSFET Process Optimized High dv/dt for RF Operation Ideal Nanosecond for ClassSwitching C, D, & E Applications Symbol	Original	IXZH16N60 IXZ316N60 dsIXZH16N60 "RF MOSFET" 300W IXZH16N60 1 RF s 640 a 931 MOSFET QG mosfet 300w rf power mosfet	PDF
neosid* 10k Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.	Original	AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz	PDF
inductor vk200 Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.	Original	AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier	PDF
JESD97 Abstract: P120NF04 STP120NF04 p120nf Text: STP120NF04 N-channel 40V - 0.0047Ω - 120A TO-220 STripFET II MOSFET General features Type VDSS RDS on ID Pw STP120NF04 40V <0.0050Ω 120A 300W • Standard threshold drive ■ 100% avalanche tested 3 1 Description This MOSFET is the latest development of	Original	STP120NF04 O-220 JESD97 P120NF04 STP120NF04 p120nf	PDF
MAR 618 transistor Abstract: STB200N4F3 JESD97 200N4F3 Text: STB200N4F3 N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET Power MOSFET Features Type VDSS RDS on ID Pw STB200N4F3 40V <0.0040Ω 120A 300W • 100% avalanche tested ■ Standard threshold drive 3 1 Description D²PAK This Power MOSFET is the latest development of	Original	STB200N4F3 MAR 618 transistor STB200N4F3 JESD97 200N4F3	PDF
IXZH10N50LA Abstract: ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905 Text: IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	IXZH10N50LA/B 175MHz IXZH10N50LB IXZH10N50LA dsIXZH10N50LA/B IXZH10N50LA ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905	PDF
Untitled Abstract: No abstract text available Text: STP120NF04 N-channel 40V - 0.0047Ω - 120A TO-220 STripFET II MOSFET General features Type VDSS RDS on ID Pw STP120NF04 40V <0.0050Ω 120A 300W • Standard threshold drive ■ 100% avalanche tested u d o 3 1 Description This MOSFET is the latest development of	Original	STP120NF04 O-220	PDF
B200N04 Abstract: JESD97 STB200N04 Text: STB200N04 N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET Power MOSFET General features Type VDSS RDS on ID Pw STB200N04 40V <0.0040Ω 120A 300W • 100% avalanche tested ■ Standard threshold drive 3 1 Description D²PAK This Power MOSFET is the latest development of	Original	STB200N04 B200N04 JESD97 STB200N04	PDF
amidon 43 toroid core Abstract: amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer Text: APPLICATION NOTE APT9802 By: Richard Frey, P.E. A 300W MOSFET Linear Amplifier for 50 MHz Reprinted from the May/June 1999 Issue of QEX Magazine Courtesy of ARRL, Inc. A 300W MOSFET Linear Amplifier for 50 MHz Richard Frey, Sr. Applications Engineer, Advanced Power Technology, Inc., Bend, Oregon USA	Original	APT9802 ARF448A/B amidon 43 toroid core amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer	PDF

88-108 rf amplifier Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932 Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.	Original	AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k	PDF
all mosfet power amplifier Abstract: 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet Text: FM500-108 500 W FM RF Power Amplifier Designed for FM transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • • MOSFET Amplifier BW: 87.5 - 108 MHz	Original	FM500-108 40W267 all mosfet power amplifier 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET  High Power Gain  Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512	Original	IDM30512CW100 IDM30512CW100 30-512MHz 400MHz. 2x100mA IDM30512CW100-REV-NC-DS-REV-B	PDF
AN705 Abstract: Si9910 Si9910DJ Si9910DY VN50300 book analog siliconix MOSFET applications book Text: Si9910 Adaptive Power MOSFET Driverb Features D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D Compatible with Wide Range of MOSFET Devices	Original	Si9910 Si9910 AN705, P-34829--Rev. 18-Apr-94 VN50300 AN705 Si9910DJ Si9910DY VN50300 book analog siliconix MOSFET applications book	PDF
pin diagram of MOSFET Abstract: flyback data pin diagram P3482 bootstrap diode HIGH-VOLTAGE HALF BRIDGE DRIVER schematic diagram simple ac power supply short circuit protection schematic diagram Si9910DY VN50300 VN50300 L Text: Si9910 Adaptive Power MOSFET Drivera Features D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D Compatible with Wide Range of MOSFET Devices	Original	Si9910 Si9910 AN705, P-34829--Rev. 18-Apr-94 VN50300 pin diagram of MOSFET flyback data pin diagram P3482 bootstrap diode HIGH-VOLTAGE HALF BRIDGE DRIVER schematic diagram simple ac power supply short circuit protection schematic diagram Si9910DY VN50300 VN50300 L	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IDM500CW300 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW	Original	IDM500CW300 IDM500CW300 2x100mA IDM500CW300-REV-NC-DS-REV-NC	PDF
200 watt hf mosfet Abstract: AN1256 SD2921-10 SD2923 HF Amplifier 300w STMicroelectronics FABRICATION SITE Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure	Original	AN1256 SD2923, SD2923 200 watt hf mosfet AN1256 SD2921-10 HF Amplifier 300w STMicroelectronics FABRICATION SITE	PDF
VFT300-50 Abstract: ASI10710 25020A Text: VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: PACKAGE STYLE .400 BAL FLG D The VFT300-50 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal applications to 175 MHz. A FULL R B .080x45° D D	Original	VFT300-50 VFT300-50 080x45° ASI10710 25020A	PDF
mosfet HF amplifier Abstract: 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet SD2923 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier Text: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure	Original	AN1256 SD2923, SD2923 mosfet HF amplifier 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier	PDF
Ultrasonic humidifier circuit Abstract: 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91 Text: POWER MOSFET APPLICATION NOTES Typical power MOSFET applications 50, I, • A u tom otive: Pow er steering, au to m o tive DC/DC converters 12V DC , electric motor driven tools, and switch replacement • Battery operated fork lifts: Power steering, running, and	OCR Scan	100VAC) 80VDC) 100VAC, 0-300W) 100VAC. 0-80W) 100ps/l Ultrasonic humidifier circuit 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91	PDF

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MOSFET 300W Search Results

MOSFET 300W Result Highlights (5)

MOSFET 300W Datasheets Context Search

mosfet 4702

rf power mosfet

"RF MOSFET" 300W

mosfet 4702

IXZ2210N50L

"RF MOSFET" 300W

neosid* 10k

inductor vk200

JESD97

MAR 618 transistor

IXZH10N50LA

Untitled

B200N04

amidon 43 toroid core

88-108 rf amplifier

all mosfet power amplifier

Untitled

AN705

pin diagram of MOSFET

Untitled

200 watt hf mosfet

VFT300-50

mosfet HF amplifier

Ultrasonic humidifier circuit