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    MOSFET 350V 30A Search Results

    MOSFET 350V 30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 350V 30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT9301

    Abstract: 30 volts boost converters APT30D60B mosfet 350v 30a
    Text: APPLICATION NOTE APT9301 By: Ken Dierberger NEW ULTRAFAST RECOVERY DIODE TECHNOLOGY IMPROVES PERFORMANCE OF HIGH FREQUENCY POWER CIRCUITS Presented at HFPC ‘93 USA Presents a comparison between APT’s new FRED and two competitor’s devices NEW ULTRAFAST RECOVERY DIODE TECHNOLOGY IMPROVES


    Original     		PDF APT9301 APT30D60B APT30D60B APT9301 30 volts boost converters mosfet 350v 30a

    power mosfet 350v 30a to 247

    Abstract: No abstract text available
    Text: Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS on D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


    Original     		PDF IXKK85N60C O-264 ID100 power mosfet 350v 30a to 247

    SHDCG224802

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. - Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • Isolated Hermetic Metal Package • Low RDS on ; Low Effective Capacitance • Ultra Low Gate Charge; very high dv/dt ratings


    Original     		PDF SHD224802 SHDCG224802 SHDCG224802) ID100 SHDCG224802 O-258

    SHDCG224802

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings


    Original     		PDF SHD224802 SHDCG224802 SHDCG224802) ID100 SHDCG224802 O-258

    MJ1800

    Abstract: APT47N60HC3 335A
    Text: APT47N60HC3 600V 33.5A 0.080Ω Super Junction MOSFET TO-258 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-258 Package D G S MAXIMUM RATINGS Symbol VDSS


    Original     		PDF APT47N60HC3 O-258 O-258 MJ1800 APT47N60HC3 335A

    SHD224802

    Abstract: SHDCG224802 ID100
    Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings


    Original     		PDF SHD224802 SHDCG224802 SHDCG224802) ID100 SHD224802 SHDCG224802 ID100

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    tf 115 250v 15a

    Abstract: No abstract text available
    Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75JLLU2 E145592 tf 115 250v 15a

    Untitled

    Abstract: No abstract text available
    Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75JLLU2 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVRU3 44A 0.100Ω 500V POWER MOS V A S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5010JVRU3 OT-227 E145592

    APT5010JLLU3

    Abstract: No abstract text available
    Text: APT5010JLLU3 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLLU3 E145592 APT5010JLLU3

    apt5010

    Abstract: No abstract text available
    Text: APT5010JVRU2 44A 0.100Ω 500V POWER MOS V K S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5010JVRU2 OT-227 E145592 apt5010

    APT5010JLL

    Abstract: APT5010JLLU2 0830A
    Text: APT5010JLLU2 500V 44A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLLU2 E145592 APT5010JLL APT5010JLLU2 0830A

    100pf,63v ceramic capacitor

    Abstract: 75 LS 541 100pf,63v BCX17 BCX19 IMAT5011 250v capacitor 4011 pinout
    Text: IMAT5011 500V 30A INTELLIGENT HALF BRIDGE POWER MOSFET MODULE PRODUCT DESCRIPTION The IMAT5011 is an isolated power MOSFET module with 2 switches connected in a half bridge configuration, with associated drivers, protections and isolation circuits. Each switch is connected with series and antiparallel fast recovery “soft” FREDs in order to inhibit the


    Original     		PDF IMAT5011 100KHz. board00 F-33700 6160xx1T2300 100pf,63v ceramic capacitor 75 LS 541 100pf,63v BCX17 BCX19 250v capacitor 4011 pinout

    Untitled

    Abstract: No abstract text available
    Text: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters


    Original     		PDF MQFL-270L-05S 5-475V 5-350V

    Untitled

    Abstract: No abstract text available
    Text: APT5 0 1 0 JV R U 3 A dvanced P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF OT-227 APT5010JVRU3 OT-227

    mosfet 350v 30a

    Abstract: No abstract text available
    Text: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVRU2 OT-227 APT5010JVRU2 OT-227 mosfet 350v 30a

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVRU3 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVRU3 OT-227 OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVRU2 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVRU2 OT-227 OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5012JNU2 5012JNU2 OT-227 Page68

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd


    OCR Scan     		PDF APT5012JNU3 5012JNU3

    5012JN

    Abstract: APT5012JNU3 APTS012JNU3 APT5012
    Text: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T


    OCR Scan     		PDF APT5012JNU3 5012JNU3 OT-227 00Dlbà 5012JN APTS012JNU3 APT5012

    APT5012JNU2

    Abstract: ST-200 transformer DIODE BAT 17
    Text: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m


    OCR Scan     		PDF APT5012JNU2 5012JNU2 OT-227 ST-200 transformer DIODE BAT 17

    SM25N

    Abstract: ssm25n40
    Text: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40


    OCR Scan     		PDF 7Tb414H SSH25N35/25N40 SSM25N35 SSM25N40 SSH25N35 SSH25N40 SSM25N35/25N40 SM25N