Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 3F Search Results

    MOSFET 3F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 3F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a4940klp

    Abstract: No abstract text available
    Text: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description High current gate drive for N-channel MOSFET full bridge Independent control of each MOSFET Charge pump for low supply voltage operation Cross-conduction protection with adjustable dead time


    Original     		PDF A4940 24-pin A4940 a4940klp

    200 Amp bridge mosfet

    Abstract: a4940 A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5
    Text: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time


    Original     		PDF A4940 A4940 24-pin 200 Amp bridge mosfet A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5

    200 Amp bridge mosfet

    Abstract: a4940 A4940KLPTR-T A4940KLPTR A4940-DS brush DC Motor control fast high side mosfet driver MOSFET ESD Rated series connection of mosfet IPC7351
    Text: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time


    Original     		PDF A4940 A4940 24-pin 200 Amp bridge mosfet A4940KLPTR-T A4940KLPTR A4940-DS brush DC Motor control fast high side mosfet driver MOSFET ESD Rated series connection of mosfet IPC7351

    brush DC Motor control

    Abstract: full bridge mosfet A4957 a4957s A495 QFN50 A4957SESTR-T full bridge mosfet driver dynamic braking unit schematic diagram
    Text: A4957 Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time


    Original     		PDF A4957 brush DC Motor control full bridge mosfet a4957s A495 QFN50 A4957SESTR-T full bridge mosfet driver dynamic braking unit schematic diagram

    brush DC Motor control

    Abstract: full bridge mosfet
    Text: A4957 Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time


    Original     		PDF A4957 brush DC Motor control full bridge mosfet

    A4940

    Abstract: brush DC Motor control A4940KLPTR-T application note gate driver for h bridge mosfet
    Text: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time


    Original     		PDF A4940 brush DC Motor control A4940KLPTR-T application note gate driver for h bridge mosfet

    1803 5a

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice Complementary NP-Channel Trench MOSFET 20V General Description Features The MDS9331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		PDF MDS9331 MDS9331 1803 5a

    MDS9753E

    Abstract: Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet
    Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability.


    Original     		PDF MDS9753E MDS9753E­ Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet

    MagnaChip Semiconductor

    Abstract: 0342F
    Text: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 20V, 7.3A, 23mΩ Ω General Description Features The MDH1331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance


    Original     		PDF MDH1331 OT-23 MDH1331 MagnaChip Semiconductor 0342F

    MDS9651

    Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
    Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		PDF MDS9651 MDS9651­ N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 13A, 6.6mΩ Ω General Description Features The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance


    Original     		PDF MDS1652 MDS1652

    0342F

    Abstract: MAGNACHIP MDS7331 trench mosfet
    Text: Preliminary – Subject to change without notice Dual P-Channel Trench MOSFET 20V, 3.8A General Description Features The MDS7331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.


    Original     		PDF MDS7331 MDS7331 0342F MAGNACHIP trench mosfet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 11.6A, 14mΩ Ω General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance


    Original     		PDF MDS1651 MDS1651

    MDD1754

    Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V


    Original     		PDF MDD1754 MDD1754 MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs

    MDD3754

    Abstract: MDD*3754 MDD375 P-channel Trench MOSFET trench mosfet magnachip .MDD3754 48m TO-252 TW18
    Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET, -40V, -12A, 48mΩ General Description Features The MDD3754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent


    Original     		PDF MDD3754 MDD3754­ MDD*3754 MDD375 P-channel Trench MOSFET trench mosfet magnachip .MDD3754 48m TO-252 TW18

    MDE1752

    Abstract: MDE1752R MAGNACHIP trench mosfet MDE1752T 40V, 50A n mosfet FEB2008 40V50A TW18
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 66A, 8.5mΩ General Description Features The MDE1752 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability


    Original     		PDF MDE1752 MDE1752­ MDE1752R MAGNACHIP trench mosfet MDE1752T 40V, 50A n mosfet FEB2008 40V50A TW18

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 50A, 8.5mΩ General Description Features The MDD1752 uses advanced Magnachip’s MOSFET Technology, which provide low onstate resistance, high switching performance and excellent reliability


    Original     		PDF MDD1752 MDD1752â

    MDS3754

    Abstract: MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET
    Text: P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = -40V ID = -6.0 @ VGS = -10V


    Original     		PDF MDS3754 MDS3754 MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET

    MDH3331

    Abstract: P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic
    Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET 20V, 3.8A, 70mΩ General Description Features The MDH3331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		PDF MDH3331 OT-23 MDH3331 P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		PDF MDS1656 MDS1656â

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent


    Original     		PDF MDS3651 MDS3651â

    MDD9754

    Abstract: MDD-9754
    Text: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		PDF MDD9754 MDD9754â MDD-9754

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET, 40V, 16A, 30mΩ General Description Features The MDD1754 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and exellent reliability.


    Original     		PDF MDD1754 MDD1754

    MAGNACHIP

    Abstract: MDP9N50 mosfet 500v 6903 n-channel 250V power mosfet N-Channel mosfet 400v to220
    Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description Features The MDP9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.


    Original     		PDF MDP9N50 MAGNACHIP mosfet 500v 6903 n-channel 250V power mosfet N-Channel mosfet 400v to220