sil 5102
Abstract: IRFP150 TB334
Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()
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IRFP150
sil 5102
IRFP150
TB334
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irfp150
Abstract: No abstract text available
Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,
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IRFP15
IRFP150
irfp150
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irf150
Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF150
TA17421.
irf150
MOSFET IRF150
TA17421
TB334
circuits of IRF150
40A100V
IRF-150
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P35NF10
Abstract: B35NF10
Text: STB35NF10 STP35NF10 N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB35NF10 100V <0.035Ω 40A STP35NF10 100V <0.035Ω 40A 3 • Exceptional dv/dt capability ■ 100% avalanche tested
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STB35NF10
STP35NF10
D2PAK/TO-220
O-220
P35NF10
B35NF10
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P35NF10
Abstract: B35NF10 p35nf STP35NF10 JESD97 STB35NF10 STB35NF10T4 B35NF TO220
Text: STB35NF10 STP35NF10 N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB35NF10 100V <0.035Ω 40A STP35NF10 100V <0.035Ω 40A 3 • Exceptional dv/dt capability ■ 100% avalanche tested
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STB35NF10
STP35NF10
D2PAK/TO-220
O-220
P35NF10
B35NF10
p35nf
STP35NF10
JESD97
STB35NF10
STB35NF10T4
B35NF
TO220
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Untitled
Abstract: No abstract text available
Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDPF085N10A
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Untitled
Abstract: No abstract text available
Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDPF085N10A
FDPF085N10A
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sil 5102
Abstract: 150N IRFP150 TB334 PO40A
Text: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N
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IRFP15
sil 5102
150N
IRFP150
TB334
PO40A
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40NF20
Abstract: STMicroelectronics 40nf20 STB40NF20
Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20
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STP40NF20
STF40NF20
STB40NF20
STW40NF20
D2PAK/TO-220/TO-220FP/TO-247
STB40NF20
STP40NF20
O-220
40NF20
STMicroelectronics 40nf20
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L6PR
Abstract: P40N20 STF40N20 STB40N20 STP40N20 STP40N20FP STW40N20
Text: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP
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STP40N20
STF40N20
STB40N20
STW40N20
D2PAK/TO-220/TO-220FP/TO-247
STB40N20
STP40N20
STP40N20FP
O-220
L6PR
P40N20
STF40N20
STP40N20FP
STW40N20
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40NF20
Abstract: STMicroelectronics 40nf20 mosfet 40a 200v STP40NF20 st 393 STB40NF20 STF40NF20 STW40NF20
Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20
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STP40NF20
STF40NF20
STB40NF20
STW40NF20
D2PAK/TO-220/TO-220FP/TO-247
STB40NF20
STP40NF20
O-220
40NF20
STMicroelectronics 40nf20
mosfet 40a 200v
st 393
STF40NF20
STW40NF20
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40NF20
Abstract: STMicroelectronics 40nf20 STP40NF20 STB40NF20 S1217 STW40NF20 STF40NF20
Text: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20
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STP40NF20
STF40NF20
STB40NF20
STW40NF20
D2PAK/TO-220/TO-220FP/TO-247
O-220
40NF20
STMicroelectronics 40nf20
S1217
STW40NF20
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P40N20
Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
Text: STP40N20 - STF40N20 STB40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP
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STP40N20
STF40N20
STB40N20
STW40N20
D2PAK/TO-220/TO-220FP/TO-247
STB40N20
STP40N20
STP40N20FP
O-220
P40N20
STF40N20
STP40N20FP
STW40N20
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P40NF10L
Abstract: p40nf10 p40nf JESD97 STP40NF10L
Text: STP40NF10L N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STP40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STP40NF10L
O-220
P40NF10L
p40nf10
p40nf
JESD97
STP40NF10L
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B40NF
Abstract: B40NF10 B40NF10L
Text: STB40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STB40NF10L
B40NF
B40NF10
B40NF10L
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p40nf10
Abstract: P40NF10L STP40NF10L
Text: STP40NF10L N-channel 100V - 0.028Ω - 40A TO-220 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID STP40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STP40NF10L
O-220
O-220
p40nf10
P40NF10L
STP40NF10L
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Untitled
Abstract: No abstract text available
Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
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FRK9160D,
FRK9160R,
FRK9160H
-100V,
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
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2E12
Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK9160D,
FRK9160R,
FRK9160H
-100V,
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRK9160D
FRK9160H
FRK9160R
Rad Hard in Fairchild for MOSFET
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frk150
Abstract: 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET
Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK150D,
FRK150R,
FRK150H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
frk150
2E12
FRK150D
FRK150H
FRK150R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK9160D,
FRK9160R,
FRK9160H
-100V,
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
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2E12
Abstract: FRK9160D FRK9160H FRK9160R
Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK9160D,
FRK9160R,
FRK9160H
-100V,
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRK9160D
FRK9160H
FRK9160R
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Untitled
Abstract: No abstract text available
Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK150D,
FRK150R,
FRK150H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
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2E12
Abstract: FRK150D FRK150H FRK150R
Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK150D,
FRK150R,
FRK150H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRK150D
FRK150H
FRK150R
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Untitled
Abstract: No abstract text available
Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRK150D,
FRK150R,
FRK150H
055S1
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AE
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