DIODE s3l
Abstract: POWER MOSFET 4600 DIODE FAST S2L diode S3L 49 diode S3L 13 diode S3L 54 DIODE s2l 54 s3l 02 diode diode S3L 39 MOSFET 4600
Text: Preliminary Data Sheet ú0560 N-Channel Power MOSFET Array Description Features The ú0560 contains six N-channel power MOS FET with VDSS = 500 V in half-bridge configuration. These enhancement-mode Power MOSFET array utilizes a DMOS structure and alpha’s dielectric
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0560DSHa
DIODE s3l
POWER MOSFET 4600
DIODE FAST S2L
diode S3L 49
diode S3L 13
diode S3L 54
DIODE s2l 54
s3l 02 diode
diode S3L 39
MOSFET 4600
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6A08
Abstract: design ideas TS16949 ZXMN6A08K ZXMN6A08KTC ZXMN6A08
Text: Part no. ZXMN6A08K 60V DPAK N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.080 @ VGS= 10V 18.2 0.150 @ VGS= 4.5V 13.3 60 Description This new generation Trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for
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ZXMN6A08K
ZXMN6A08KTC
D-81541
A1103-04,
6A08
design ideas
TS16949
ZXMN6A08K
ZXMN6A08KTC
ZXMN6A08
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ZXMP 6A17
Abstract: 6a17 ZXMP6A17K design ideas ZXMP6A17KTC TS16949 zxmp6A17
Text: Part no. ZXMP6A17K 60V DPAK P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 0.125 @ VGS= -10V 15.6 0.190 @ VGS= -4.5V 12.6 -60 Description This new generation Trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for
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ZXMP6A17K
D-81541
A1103-04,
ZXMP 6A17
6a17
ZXMP6A17K
design ideas
ZXMP6A17KTC
TS16949
zxmp6A17
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a1712
Abstract: a1712 mosfet a1712-1 ENA1712
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ENA1712
ATP214
4850pF
PW10s)
PW10s,
A1712-4/4
a1712
a1712 mosfet
a1712-1
ENA1712
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a1712 mosfet
Abstract: A1712
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
a1712 mosfet
A1712
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a1712
Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ATP214
ENA1712
4850pF
PW10s,
PW10s)
A1712-4/4
a1712
a1712 mosfet
a1712 transistor
a1712-1
ATP214
ENA1712
A1712-4
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A1712
Abstract: a1712 mosfet
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
A1712
a1712 mosfet
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a1712 mosfet
Abstract: A1712
Text: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •
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ENA1712A
ATP214
4850pF
PW10s)
PW10s,
L100H,
A1712-7/7
a1712 mosfet
A1712
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mosfet short circuit protection schematic diagram
Abstract: No abstract text available
Text: ZXMS6004EV1 USER GUIDE Description The ZXMS6004EV1 board Figure 1 is intended for the evaluation of the ZXMS6004FF self protected low side MOSFET. The evaluation board enables the user to evaluate the over-temperature, overcurrent and over-voltage (active clamp)
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ZXMS6004EV1
ZXMS6004FF
ZXMS6004FF.
ZXMS6004FF,
OT223
BSP75G)
D-81541
A1103-04,
mosfet short circuit protection schematic diagram
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lcd inverter n mosfet cross reference
Abstract: dc power supply mbr10100ct Schottky diode MBR30100CT ZXGD3101 mosfet 3918 3918 MOSFET mosfet 4800 circuit DN-90 40W flyback transformer High voltage smps transformer for lcd display
Text: A Product Line of Diodes Incorporated DN90 ZXGD3101 Synchronous MOSFET controller improves energy efficiency of dual-output power supply Yong Ang, Applications Engineer, Diodes Incorporated Introduction This design note addresses the challenge of applying Synchronous Rectification on dual-outputs
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ZXGD3101
D-81541
lcd inverter n mosfet cross reference
dc power supply mbr10100ct Schottky diode
MBR30100CT
mosfet 3918
3918 MOSFET
mosfet 4800 circuit
DN-90
40W flyback transformer
High voltage smps transformer for lcd display
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TO-254Z
Abstract: No abstract text available
Text: SFF55N20M SFF55N20Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP N-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/
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SFF55N20M
SFF55N20Z
SFF55N20
O-254
O-254Z
Fa850
O-254
TO-254Z
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zxms6004
Abstract: ZXMS6004FF ZXMS66004FFTA zxms66004 design ideas TS16949
Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 90mJ Description
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ZXMS6004FF
ZXMS6004FF
D-81541
zxms6004
ZXMS66004FFTA
zxms66004
design ideas
TS16949
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ZXMS66004SGTA
Abstract: zxms6004 design ideas TS16949 ZXMS6004SG zxms66004
Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description
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ZXMS6004SG
480mJ
ZXMS6004SG
Level1362-3154
D-81541
ZXMS66004SGTA
zxms6004
design ideas
TS16949
zxms66004
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zxms66004
Abstract: ZXMS66004DGTA 6004D design ideas ZXMS6004DG TS16949 ZXMS6004
Text: A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 490mJ Description
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ZXMS6004DG
490mJ
ZXMS6004DG
Level1362-3154
D-81541
zxms66004
ZXMS66004DGTA
6004D
design ideas
TS16949
ZXMS6004
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description
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ZXMS6004SG
480mJ
ZXMS6004SG
Log62-3154
D-81541
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 90mJ Description
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ZXMS6004FF
ZXMS6004FF
Logi62-3154
D-81541
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Untitled
Abstract: No abstract text available
Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability
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NTMFS4923NE
NTMFS4923NE/D
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40N50Q2
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR40N50Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings
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IXFR40N50Q2
250ns
ISOPLUS247
E153432
40N50Q2
05-28-08-C
40N50Q2
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40n50
Abstract: ISOPLUS247 IXFR40N50Q2 40N50Q2
Text: HiPerFETTM Power MOSFET Q2-Class IXFR40N50Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings
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IXFR40N50Q2
250ns
ISOPLUS247
E153432
40N50Q2
05-28-08-C
40n50
ISOPLUS247
IXFR40N50Q2
40N50Q2
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Untitled
Abstract: No abstract text available
Text: AP0203GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 30V RDS ON SO-8 Compatible with Heatsink Low On-resistance ID G RoHS Compliant & Halogen-Free 2.2m 155A S D Description
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AP0203GMT-HF
100us
100ms
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Untitled
Abstract: No abstract text available
Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability
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NTMFS4923NE
NTMFS4923NE/D
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PDF
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Untitled
Abstract: No abstract text available
Text: AP0203GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance 30V RDS ON 2.2mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS
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AP0203GMT-HF
100us
100ms
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ900DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ900DT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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siemens automotive relay dc 12v
Abstract: Bsp78
Text: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high
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D-81541
A1103-04,
siemens automotive relay dc 12v
Bsp78
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