Untitled
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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MSWSS-040-30
A17125,
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Untitled
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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MSWSS-040-30
STD-J-20C
A17125
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a1712 mosfet
Abstract: A1712
Text: Ordering number : A1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •
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ENA1712A
ATP214
4850pF
PW10s)
PW10s,
L100H,
A1712-7/7
a1712 mosfet
A1712
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MSWSS-040-30
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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MSWSS-040-30
STD-J-20C
A17125
MSWSS-040-30
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transistor a1413
Abstract: a1413 a2305 4b42 A14129 ls-t73 transistor a1412 a2400 a2380 A18004
Text: Motorola XGATE Assembler Revised 02-Jun-2004 Metrowerks and the Metrowerks logo are registered trademarks of Metrowerks Corporation in the United States and/ or other countries. CodeWarrior is a trademark or registered trademark of Metrowerks Corporation in the United States
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02-Jun-2004
transistor a1413
a1413
a2305
4b42
A14129
ls-t73
transistor a1412
a2400
a2380
A18004
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MSWSH
Abstract: MSWSH-040-30
Text: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
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MSWSH-040-30
STD-J-20C
A17122
MSWSH
MSWSH-040-30
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l6703
Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Text: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS
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X3904U:
X3905U:
X3906U:
X3907U:
X3908U:
X3910W:
X3912W:
X3913W:
X3915W:
X3916U:
l6703
L6283
l6278
L6284
L6916
l6262
A1658
SVC 561 14
C3041
A1671
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Untitled
Abstract: No abstract text available
Text: MSWSER-070-10 SILICON PIN DIODE SWITCH ELEMENT DFN 3023 non-hermetic Description Features The MSWSER-070-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 80 W C.W. It has low insertion loss. • Broadband performance up to 0.8 GHz
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MSWSER-070-10
MSWSER-070-10
STD-J-20C
A17120
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Untitled
Abstract: No abstract text available
Text: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give
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MSWSS-040-30
STD-J-20C
A17125
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Untitled
Abstract: No abstract text available
Text: MMSPN050 Microstrip PIN Diodes C53 Description Features A broadband medium power Microstrip PIN diode is designed as a 50 ohm microstrip when biased at zero or a negative voltage. This device is usable up to 40 GHz. • Supports up to 40 watts power • Low insertion loss 0.4 dB typical up to 40 GHz
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MMSPN050
STD-J-20C
A17128
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l6703
Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Text: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS
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x3903U:
x3904U:
x3905U:
x3906U:
x3907U:
x3908U:
x3910W:
x3912W:
x3913W:
x3915W:
l6703
asm 1442
L6916E
SVC 561 14
L6232E
A1659
a1718
a1694
C2068
STR 6765
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L6283
Abstract: L6278 l6703 L6916 A1273 L6320W 0496B L6252 L6324 A1671
Text: ARM Compiler toolchain Version 4.1 Errors and Warnings Reference Printed on: October 25, 2010 Copyright 2010 ARM. All rights reserved. DUI 0496B ID102510 ARM Compiler toolchain Errors and Warnings Reference Copyright © 2010 ARM. All rights reserved.
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0496B
ID102510)
A1746W.
L6065E.
L6220E,
L6221E,
L6384E,
L6915E,
L6971E.
L6224E
L6283
L6278
l6703
L6916
A1273
L6320W
0496B
L6252
L6324
A1671
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l6703
Abstract: A1659 L6361 L6352 L6916 C3335 C3331 c3317 A1652W A1671
Text: RealView Compilation Tools Version 4.0 Errors and Warnings Reference Copyright 2010 ARM. All rights reserved. DUI 0495A ID041910 RealView Compilation Tools Errors and Warnings Reference Copyright © 2010 ARM. All rights reserved. Release Information
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ID041910)
X3904U
X3905U
X3906U
X3907U
X3908U
X3910W
X3912W
X3913W
X3915W
l6703
A1659
L6361
L6352
L6916
C3335
C3331
c3317
A1652W
A1671
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A1712
Abstract: a1712 mosfet
Text: ATP214 Ordering number : A1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
A1712
a1712 mosfet
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a1712-1
Abstract: No abstract text available
Text: MSWSER-100-05 SILICON PIN DIODE SWITCH ELEMENT DFN 3023 non-hermetic Description Features The MSWSER-100-05 is a PIN diode SPST switch element designed for medium incident power applications, up to 80 W C.W. It has low insertion loss. • Broadband performance up to 0.8 GHz
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MSWSER-100-05
MSWSER-100-05
STD-J-20C
A17121
a1712-1
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MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1
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9800-OERF-007
9800-OERF-005
MDM 6600
mt 1389 de
2061 D nikko
AR9344
bosch AL 1115 CV
denso alternator
7805/3A
bosch al 1450 dv
CATERPILLAR 207-1560
ba 4918
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a1712
Abstract: a1712 mosfet a1712-1 ENA1712
Text: ATP214 Ordering number : A1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ENA1712
ATP214
4850pF
PW10s)
PW10s,
A1712-4/4
a1712
a1712 mosfet
a1712-1
ENA1712
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a1712 mosfet
Abstract: A1712
Text: ATP214 Ordering number : A1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
a1712 mosfet
A1712
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a1712
Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
Text: ATP214 Ordering number : A1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ATP214
ENA1712
4850pF
PW10s,
PW10s)
A1712-4/4
a1712
a1712 mosfet
a1712 transistor
a1712-1
ATP214
ENA1712
A1712-4
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Untitled
Abstract: No abstract text available
Text: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
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MSWSH-040-30
STD-J-20C
A17122
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60 GHz PIN diode
Abstract: 20 GHz PIN diode cm27 10 GHz pin diode MEST2G-080-25-CM27 diode PIN 60 Ghz MEST2G-080-25
Text: MEST2G-080-25 PIN DIODE SWITCH ELEMENT CM27 non-hermetic Description Features The MEST2G-080-25-CM27 is a Thermal to Ground Series diode Switch Element in a Copper package. This part is designed for reliable high power switch application up to 80 watts. Usable up to 10 GHz.
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MEST2G-080-25
MEST2G-080-25-CM27
STD-J-20C
A17126
60 GHz PIN diode
20 GHz PIN diode
cm27
10 GHz pin diode
diode PIN 60 Ghz
MEST2G-080-25
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Untitled
Abstract: No abstract text available
Text: MSWSH-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Molden Plastic DFN Description Features A broadband, high linearity, medium power shunt switch element in a 1.9 X 1.1 mm DFN package. This device is designed for wireless telecommunications infrastructure and test instrument applications. It is
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MSWSH-040-30
A17122
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PDF
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Untitled
Abstract: No abstract text available
Text: MEST2G-080-25 PIN DIODE SWITCH ELEMENT CM27 non-hermetic Description Features The MEST2G-080-25-CM27 is a Thermal to Ground Series diode Switch Element in a Copper package. This part is designed for reliable high power switch application up to 80 watts. Usable up to 10 GHz.
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MEST2G-080-25
MEST2G-080-25-CM27
STD-J-20C
A17126
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A1712
Abstract: a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214
Text: ATP214 注文コード No. N A 1 7 1 2 三洋半導体データシート N ATP214 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=6.2mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4850pF(typ.)
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ATP214
4850pF
JEDET15696
IT15711
IT15514
A1712-3/4
A1712
a1712 mosfet
a1712-1
A1712-4
4850p
S4850
ATP214
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