a1712 mosfet
Abstract: A1712
Text: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •
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ENA1712A
ATP214
4850pF
PW10s)
PW10s,
L100H,
A1712-7/7
a1712 mosfet
A1712
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A1712
Abstract: a1712 mosfet
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
A1712
a1712 mosfet
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a1712
Abstract: a1712 mosfet a1712-1 ENA1712
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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Original
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ENA1712
ATP214
4850pF
PW10s)
PW10s,
A1712-4/4
a1712
a1712 mosfet
a1712-1
ENA1712
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a1712 mosfet
Abstract: A1712
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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Original
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ATP214
ENA1712A
4850pF
A1712-7/7
a1712 mosfet
A1712
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a1712
Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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Original
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ATP214
ENA1712
4850pF
PW10s,
PW10s)
A1712-4/4
a1712
a1712 mosfet
a1712 transistor
a1712-1
ATP214
ENA1712
A1712-4
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A1712
Abstract: a1712 mosfet a1712-1 A1712-4 4850p S4850 ATP214
Text: ATP214 注文コード No. N A 1 7 1 2 三洋半導体データシート N ATP214 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=6.2mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4850pF(typ.)
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ATP214
4850pF
JEDET15696
IT15711
IT15514
A1712-3/4
A1712
a1712 mosfet
a1712-1
A1712-4
4850p
S4850
ATP214
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rqa200n03
Abstract: 4850p 7111 00E-6 rqa200
Text: SPICE PARAMETER RQA200N03 by ROHM TR Div. * RQA200N03 NMOSFET model * Date: 2007/07/24 *D G S .SUBCKT RQA200N03 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 100p D1 3 1 DDS R1 1 11 RTH 1.5m D2 11 21 DDG D3 22 21 DDG R2 2 22 8 .MODEL MOS_N NMOS + LEVEL=3
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RQA200N03
RQA200N03
0000E-6
29E-6
0000E-3
000E6
4850p
4850p
7111
00E-6
rqa200
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spf 9001
Abstract: sf hd60 AS0242 scr 1a 1200V CMX20003 MML 400 E1 cx240d5 SFE 5.5 MC CX24005 crouzet typ 900
Text: • P C B ■ D IN § S / l $ ^ ■ a w « » Solid State Relays TECHNOLOGIES c r y c Ê o m ìS ìt , 1 9 9 3 ^5 ^, ïÆ M W a io o o ^ Æ iâ i+0 C r y d o m m f iS M W T iju a n a á < J í S l^ f t 1 0 : # á iW x r ilí 3 Í 7 I S 0 9 0 0 2 > A iE ,
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OCR Scan
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CX241/MCX241
LC241
D12/D24,
A12/A24
VHA60
X4IAC/X40AC/X4JDC/X40DC
spf 9001
sf hd60
AS0242
scr 1a 1200V
CMX20003
MML 400 E1
cx240d5
SFE 5.5 MC
CX24005
crouzet typ 900
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