IRFM460
Abstract: No abstract text available
Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90727B
O-254AA)
IRFM460
O-254AA.
MIL-PRF-19500
IRFM460
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Untitled
Abstract: No abstract text available
Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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90727B
O-254AA)
IRFM460
O-254AA.
MIL-PRF-19500
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IRFMA450
Abstract: No abstract text available
Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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IRFMA450
O-254AA)
O-254AA.
MIL-PRF-19500
IRFMA450
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Untitled
Abstract: No abstract text available
Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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IRFMA450
O-254AA)
O-254AA.
MIL-PRF-19500
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA16N50
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IRF820
Abstract: irf-82
Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()
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IRF820
IRF82
O220AB
IRF820
irf-82
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830
O-220
UF830L
UF830-TA3-T
UF830es
QW-R502-046
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ISD18A
Abstract: MOSFET 500V 18A 18n50
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N50
18N50
QW-R502-477
ISD18A
MOSFET 500V 18A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N50
18N50
O-220F1
O-220F2
QW-R502-477
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF830
UF830L-TA3-T
UF830G-TA3-T
O-220
UF830L-TF3-T
UF830G-TF3-T
O-220F
UF830L-TF1-T
QW-R502-046
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching
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UF830Z
UF830ZL-TF3-T
UF830ZG-TF3-T
QW-R502-612
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specifications of power mosfet
Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF840
O-220
O-220F1
O-220F2
O-220F
O-262
O-263
QW-R502-047
specifications of power mosfet
N-Channel mosfet 400v to220
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
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UF840
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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UF840
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840G-TF3-T
UF840L-TF3T-T
UF840
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SMD TRANSISTOR 12a
Abstract: IRFN450 JANTX2N7228U JANTXV2N7228U 400V Single N-Channel HEXFET Power MOSFET
Text: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International
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90418C
IRFN450
JANTX2N7228U
JANTXV2N7228U
MIL-PRF-19500/592
SMD TRANSISTOR 12a
IRFN450
JANTX2N7228U
JANTXV2N7228U
400V Single N-Channel HEXFET Power MOSFET
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Untitled
Abstract: No abstract text available
Text: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International
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90418C
IRFN450
JANTX2N7228U
JANTXV2N7228U
MIL-PRF-19500/592
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MOSFET 50V 100A TO-220
Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF840
O-220
O-220F
UF840L
UF840-TA3-T
UF840L-TA3-T
QW-R502-047
MOSFET 50V 100A TO-220
UF840
UF840L-TA3-T
UF840-TA3-T
UF840-TF3-T
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fda16n50_f109
Abstract: FDA16N50-F109
Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDA16N50
fda16n50_f109
FDA16N50-F109
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IRFM440
Abstract: JANTX2N7222 JANTXV2N7222 JANTX2N7222 spice
Text: PD - 90492D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM440 JANTX2N7222 JANTXV2N7222 REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International
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90492D
O-254AA)
IRFM440
JANTX2N7222
JANTXV2N7222
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
IRFM440
JANTX2N7222
JANTXV2N7222
JANTX2N7222 spice
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UF830L
Abstract: UF830G UF830 max3103
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF830
O-220
O-220F
O-262
O-251
O-252
UF830L-TA3-T
UF830G-TA3-Tt
QW-R502-046
UF830L
UF830G
UF830
max3103
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IRFN440
Abstract: JANTX2N7222U JANTXV2N7222U
Text: PD - 91552C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN440 JANTX2N7222U JANTXV2N7222U REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International
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91552C
IRFN440
JANTX2N7222U
JANTXV2N7222U
MIL-PRF-19500/596
IRFN440
JANTX2N7222U
JANTXV2N7222U
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF840
UF840L-TA3-T
UF840G-TA3-T
UF840L-TF1-T
UF840G-TF1-T
UF840L-TF2-T
UF840G-TF2-T
UF840L-TF3-T
UF840Gat
QW-R502-047
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15NM50 Preliminary Power MOSFET 15A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 15NM50 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state
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15NM50
15NM50
QW-R205-043
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N50K-MT Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N50K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,
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11N50K-MT
11N50K-MT
QW-R502-B25
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