Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 50V 100A Search Results

    MOSFET 50V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 50V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771

    BUZ71 application

    Abstract: No abstract text available
    Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ71 O220AB TA9770. BUZ71 application

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB

    transistor RFP25N05

    Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334
    Text: RFP25N05 Data Sheet January 2002 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RFP25N05 RFP25N05 TA09771. O-220AB transistor RFP25N05 AN7254 AN7260 AN9321 AN9322 TB334

    transistor s2a

    Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334 4511 mosfet la 4507
    Text: RFP25N05 Data Sheet July 1999 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER RFP25N05 PACKAGE TO-220AB BRAND 2112.4 Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses


    Original     		PDF RFP25N05 O-220AB RFP25N05 TA09771. transistor s2a AN7254 AN7260 AN9321 AN9322 TB334 4511 mosfet la 4507

    RFG60P05E

    Abstract: TB334
    Text: RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 50V This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		PDF RFG60P05E TA09835. O-247 175oC RFG60P05E TB334

    Untitled

    Abstract: No abstract text available
    Text: ^s.mi-dondiicto'i Lpioduati, One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 RFP25N05 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A,50V The RFP25N05 N-channel power MOSFET is manufactured


    Original     		PDF RFP25N05 RFP25N05 O-220ABo 00A/HS

    MOSFET 50V 100A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N05 Power MOSFET 100A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT100N05 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance and superior switching


    Original     		PDF UTT100N05 UTT100N05 O-220 UTT100N05L-TA3-T UTT100N05G-TA3-T QW-R502-688 MOSFET 50V 100A

    BUZ71 application

    Abstract: BUZ71 TB334
    Text: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF BUZ71 TA9770. O-220AB BUZ71 application BUZ71 TB334

    BUZ71A

    Abstract: TB334
    Text: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF BUZ71A TA9770. O-220ABopment. BUZ71A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05SM September 2013 Data Sheet N-Channel Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		PDF RFD16N05SM RFD16N05 RFD16N05SM TA09771. RFD16N05SM9A

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05LSM September 2013 Data Sheet N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RFD16N05LSM RFD16N05LSM

    Untitled

    Abstract: No abstract text available
    Text: RFD14N05SM9A September 2013 Data Sheet Features N-Channel Power MOSFET 50V, 14A, 100 mΩ • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives


    Original     		PDF RFD14N05SM9A TA09770. RFD14N05SM9A

    Untitled

    Abstract: No abstract text available
    Text: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as


    Original     		PDF BUZ71A BUZ71 TA9770.

    Untitled

    Abstract: No abstract text available
    Text: PD-94192D HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		PDF PD-94192D O-257AA) IRL7Y1905C O-257AC 5M-1994. O-257AA.

    40V 60A MOSFET

    Abstract: RFG60P05E TB334
    Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFG60P05E O-247 175oC TB334 40V 60A MOSFET RFG60P05E TB334

    BUZ71

    Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
    Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as


    Original     		PDF BUZ71A BUZ71 TA9770. BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a

    IRL7Y1905C

    Abstract: No abstract text available
    Text: PD - 94192C HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		PDF 94192C O-257AA) IRL7Y1905C O-257AA. 5M-1994. O-257AA IRL7Y1905C

    TA9771

    Abstract: BUZ11 TB334
    Text: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as


    Original     		PDF BUZ11 BUZ11 TA9771. TA9771 TB334

    IRL7Y1905C

    Abstract: No abstract text available
    Text: PD - 94192 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		PDF O-257AA) IRL7Y1905C 5M-1994. O-257AA IRL7Y1905C

    IRL7Y1905C

    Abstract: No abstract text available
    Text: PD - 94192B HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


    Original     		PDF 94192B O-257AA) IRL7Y1905C 5M-1994. O-257AA IRL7Y1905C

    Untitled

    Abstract: No abstract text available
    Text: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes


    OCR Scan     		PDF RFG60P05E TA09835. 0-030i2

    Untitled

    Abstract: No abstract text available
    Text: RFP25N05 HARRIS S E M I C O N D U C T O R 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET July 1998 Features Description • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses fea­ ture sizes approaching those of LSI integrated circuits, gives


    OCR Scan     		PDF RFP25N05 RFP25N05 0-047S2 55e-10 1e-30 04e-3 04e-6) 85e-3 77e-5)

    4134 mosfet

    Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
    Text: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.


    OCR Scan     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRFZ44N HUF75307P3, HUF75307D3, HUF75307D3S HUF75309P3, HUF75309D3, 4134 mosfet Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET