Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 600A 600V Search Results

    MOSFET 600A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600A 600V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N mosfet 250v 600A

    Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
    Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?


    Original     		QJQ0224005 FS40SM-5 N mosfet 250v 600A mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v PDF

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


    Original     		QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss PDF

    IRGDDN600K06

    Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
    Text: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan     		IRGDDN600K06 IRGRDN600K06 C-1016 MA55455 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package PDF

    DOUBLE INT-A-PAK Package

    Abstract: No abstract text available
    Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"


    OCR Scan     		DDN600M06 RDN600M06 Outline13 C-456 DOUBLE INT-A-PAK Package PDF

    IRGDDN600K06

    Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
    Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses


    OCR Scan     		IRGDDN600K06 1RGRDN600K06 C-1016 mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e PDF

    N mosfet 250v 600A

    Abstract: No abstract text available
    Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A


    Original     		0000W, 0400W, 4500W, 5600W 00V/0 20kHz 63200-E-201408-1000 N mosfet 250v 600A PDF

    semikron snubber

    Abstract: snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt
    Text: SEMIKRPN innovation+ service U tf&i Now SEMIKRON introduces SKiiP SKiiP , a new compact technology for integrated intelligent power. SKiiPPACK® IGBT product range from 600 to 1700V from 150 to 800A sixpack 600V from 150 to 300A sixpack 1200/1700V from 400 to 1200A halfbridge 1200/1700V


    OCR Scan     		1200/1700V semikron snubber snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt PDF

    7272

    Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
    Text: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed


    Original     		QJS0660001 Amperes/600 FK18SM-12 -600A/ 7272 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V PDF

    Untitled

    Abstract: No abstract text available
    Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)


    Original     		APT94N60L2C3 APT94N60L2C3G* O-264 APT94N60L2C3 75DQ60 APT30DF60 PDF

    APT94N60L2C3G

    Abstract: No abstract text available
    Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Dual die (parallel)


    Original     		APT94N60L2C3 APT94N60L2C3G* O-264 75DQ60 APT30DF60 APT94N60L2C3G PDF

    Untitled

    Abstract: No abstract text available
    Text: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package


    Original     		APT106N60B2C6 O-247 PDF

    apt60dq60

    Abstract: APT106N60B2C6
    Text: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package


    Original     		APT106N60B2C6 O-247 apt60dq60 APT106N60B2C6 PDF

    APTM120U10SA

    Abstract: No abstract text available
    Text: APTM120U10SA Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTM120U10SA APTM120U10SA PDF

    MOSFET circuit welding INVERTER

    Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
    Text: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES


    Original     		PDF

    AN-7528

    Abstract: 50us60s TA49468 mosfet 600V 50A 25A10 an7528
    Text: tm FFH50US60S Features 50A, 600V, Stealth Diode • Stealth Recovery, Trr = 113 ns @ IF = 50 A The FFH50US60S is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC), low VF and soft


    Original     		FFH50US60S FFH50US60S AN-7528 50us60s TA49468 mosfet 600V 50A 25A10 an7528 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM120UM70F-AlN Single switch MOSFET Power Module SK S D DK G S D SK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance


    Original     		APTM120UM70F-AlN APTM120UM70F PDF

    103A

    Abstract: c 103 mosfet
    Text: APTM120UM95F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance


    Original     		APTM120UM95F-AlN APTM120UM95F 103A c 103 mosfet PDF

    GTO thyristor 1200V 50A

    Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
    Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM120U100S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ max @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies


    Original     		APTM120U100S-AlN APTM120U100S PDF

    DS333

    Abstract: No abstract text available
    Text: APTM50AM38ST VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		APTM50AM38ST DS333 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM50AM38STG VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		APTM50AM38STG PDF

    Untitled

    Abstract: No abstract text available
    Text: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.


    Original     		APT30N60BC6 APT30N60SC6 PDF

    DD2030

    Abstract: diode 53a APT53N60BC6 APT53N60B
    Text: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.


    Original     		APT53N60BC6 APT53N60SC6 O-247 DD2030 diode 53a APT53N60B PDF