w20nm
Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω
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STB20NM60-1
STP20NM60FP
STB20NM60
STP20NM60
STW20NM60
O-247
O-220/FP
STP20NM60
STB20NM60
w20nm
w20nm60
p20nm60fp
P20NM60FP equivalent
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W20NM60
Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A
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STB20NM60/-1
STP20NM60FP
STP20NM60
STW20NM60
O-247
O-220/FP
STB20NM60
STB20NM60-1
W20NM60
P20nm60
p20nm60fp
w20nm60 equivalent
P20NM60FP equivalent
mosfet w20nm60
B20NM60-1
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w20nm60
Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A
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STB20NM60/-1
STP20NM60FP
STP20NM60
STW20NM60
O-247
O-220/FP
STP20NM60
STB20NM60
STB20NM60-1
w20nm60
w20nm60 equivalent
p20nm60
p20nm60fp
w20nm
P20NM60FP equivalent
STB20NM60-1
B20NM60-1
STP20NM60 Contents
STW20NM60
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w20nm60
Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A
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STB20NM60-1
STP20NM60FP
STB20NM60
STP20NM60
STW20NM60
O-247
O-220/FP
STP20NM60
STB20NM60
w20nm60
w20nm60 equivalent
p20nm60
P20NM60FP
B20NM60
V2.1
P20NM60FP equivalent
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RG 2006 10A 600V
Abstract: No abstract text available
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
RG 2006 10A 600V
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W20NM60
Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60FD
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
O-247
W20NM60
w20nm60fd
P20NM60FD
p20nm60
p20nm60f
mosfet 600V 100A ST
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w20nm60
Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
w20nm60
w20nm60fd
P20NM60FD
F20NM60D
STP20NM60FD
STW20NM60FD
p20nm60
mosfet 600V 100A ST
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20nm60
Abstract: W 20NM60 *b20nm6 STB20NM60-1
Text: STP20NM60 - STP20NM60FP STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET ADVANCED DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM60/FP 600V <0.29Ω 20 A STB20NM60-1 600V <0.29Ω 20 A TYPICAL RDS(on) = 0.25Ω
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O-220/TO-220FP/I
STP20NM60/FP
STB20NM60-1
STP20NM60
STP20NM60FP
O-220
O-220FP
20nm60
W 20NM60
*b20nm6
STB20NM60-1
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Mosfet
Abstract: SSF20N60H
Text: SSF20N60H 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.2ohm(typ.) ID 20A TO247 High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
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SSF20N60H
SSF20N60H
Mosfet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
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mosfet 20n60
Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
O-247
QW-R502-587
mosfet 20n60
600V 20A N-Channel MOSFET TO-3P
20n60 G
mosfet 20n60 600v
20N60 mosfet
20N60G-T3P-T
N-Channel 600V MOSFET
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mosfet 20n60
Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
20N60L-T47-T
20N6ntarily,
QW-R502-587
mosfet 20n60
IDA14
600V 20A N-Channel MOSFET TO-3P
20N60 mosfet
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Mosfet
Abstract: SSF20NS60F
Text: SSF20NS60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 170mΩ(typ.) ID 20A TO220F High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
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SSF20NS60F
O220F
SSF20NS60F
ContS60F
Mosfet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
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20N60
Abstract: 20N60 mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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20N60
20N60
QW-R502-587
20N60 mosfet
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B20NM60D
Abstract: JESD97 STB20NM60D
Text: STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET General features Type VDSS RDS on ID Pw STB20NM60D 600V <0.29Ω 20A 45W • High dv/dt and avalanche capabilities ■ 100% Avalanche tested ■ Low input capacitance and gate charge
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STB20NM60D
B20NM60D
JESD97
STB20NM60D
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Mosfet
Abstract: SSF20NS60
Text: SSF20NS60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 170mΩ(typ.) ID 20A TO-220 Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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SSF20NS60
O-220
SSF20NS60
Mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6020ENJ
SC-83)
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.
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R6020FNX
O-220FM
R1102A
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R6020ENX
Abstract: No abstract text available
Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6020ENX
O-220FM
R1102A
R6020ENX
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STW20NM60
Abstract: Mosfet 600V, 20A
Text: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STW20NM60
O-247
STW20NM60
Mosfet 600V, 20A
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STW20NM60N
Abstract: STW20NM60
Text: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 n n n n n n VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW20NM60
O-247
STW20NM60N
STW20NM60
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Untitled
Abstract: No abstract text available
Text: R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6020ENJ
SC-83)
R1102A
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