10A600V
Abstract: No abstract text available
Text: TAK CHEONG N-Channel Power MOSFET 10A, 600V, 0.75Ω 1 GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state
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DB-100
10A600V
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Untitled
Abstract: No abstract text available
Text: Product Summary ICE10N60FP N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE10N60FP
250uA
O-220
100us
0E-06
0E-02
0E-04
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE10N60 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 10A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.28Ω Typ Qg VDS = 480V 41nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE10N60
250uA
O-220
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
0E-00
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playstation 2 power supply
Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO
Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Sony, Playstation, Nintendo, Gamecube, Microsoft and Xbox are trademarks and property of their respective owners. Semiconductors ASPD / page:2 DMI – BL Power Technical • CPU: Sony "Emotion Engine”, 128 bit, 300 MHz
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OT223
BSH105
BSH103
PHP225
PHC21025
playstation 2 power supply
playstation 1 power supply
SONY PLAYSTATION 3
sony playstation 3 power supply
sony playstation 1 power supply
sony playstation 2 power supply
PLAYSTATION 3 power supply
sony playstation 2
graphics synthesizer
IBM GEKKO
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Untitled
Abstract: No abstract text available
Text: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170
250uA
O-220
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE20N170U Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170U
250uA
O-262
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
0E-00
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Untitled
Abstract: No abstract text available
Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 98mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HR11CT3G
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Untitled
Abstract: No abstract text available
Text: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170FP
250uA
O-220
0E-06
0E-04
0E-02
0E-00
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Untitled
Abstract: No abstract text available
Text: ICE20N170B Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170B
250uA
O-263
100us
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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Untitled
Abstract: No abstract text available
Text: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE20N170FP
250uA
O-220
100us
0E-06
0E-04
0E-02
0E-00
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"VDSS 800V" 40A mosfet
Abstract: No abstract text available
Text: APTMC120HR11CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 110mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 20A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HR11CT3G
"VDSS 800V" 40A mosfet
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Untitled
Abstract: No abstract text available
Text: APTMC120HRM40CT3G Phase Leg & Dual Common Emitter Power Module SiC MOSFET Q1, Q2 : VCES = 1200V ; RDSon = 34mΩ max @ Tj = 25°C Trench & Field Stop IGBT3 (Q3, Q4): VCES = 600V ; IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTMC120HRM40CT3G
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Untitled
Abstract: No abstract text available
Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PDPbF
IRFPE30
O-247AC
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mosfet 10a 600v
Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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94624B
IRGP50B60PD
O-247AC
mosfet 10a 600v
td 1410
IRGP50B60PD
600V 25A Ultrafast Diode
irfp250 DRIVER
P channel 50A IGBT
30ETH06
IRFP250
50AIF
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IRGP50B60PDPBF
Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PDPbF
IRFPE30
O-247AC
IRGP50B60PDPBF
035H
30ETH06
IRFP250
IRFPE30
210uH
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035H
Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP50B60PDPbF
IRFPE30
O-247AC
035H
30ETH06
IRFP250
IRFPE30
Ice-100
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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ETD4916A
Abstract: STK2N50 ferrite core geometry diode BYW 200 500watts amplifier pcb layout 3kw pfc using l4981 application note r4849-a 0.5mh l4981 AN628 400W pwm smps schematic Philips Electrolytic Capacitor 824k 400v
Text: APPLICATION NOTE A 500W HIGH POWER FACTOR WITH THE L4981A CONTINUOUS MODE IC The widespread use of passive AC/DC off-line converters causes low power factor and high line current harmonic distortion. To reduce these phenomena and to comply with relevant regulatory
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L4981A
L4981A
ETD4916A
STK2N50
ferrite core geometry
diode BYW 200
500watts amplifier pcb layout
3kw pfc using l4981 application note
r4849-a 0.5mh
l4981 AN628
400W pwm smps schematic
Philips Electrolytic Capacitor 824k 400v
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30ETH06
Abstract: IRFP250 IRGP50B60PD
Text: PD - 94624A IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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4624A
IRGP50B60PD
O-247AC
30ETH06
IRFP250
IRGP50B60PD
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LSI SAS 2208
Abstract: li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic
Text: 1 Discrete Features Optoelectronics • Independent current limiting and shutdown controls · VTT output sources and sinks up to 3A · Tracking VDDQ /2 to within ±2% · VREF output follows VTT within ±40mV · Comprehensive New Product List · New Product Highlights
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FAN5236
900mV
28-lead
Power247TM,
LSI SAS 2208
li shin
smps 500W
P channel 600v 20a IGBT
optocoupler NAND
THREE PHASE SOLID STATE RELAY WITH ZVS
smps 500w half bridge
smps igbt
h-bridge igbt pwm schematics circuit
600 watt smps schematic
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Philips Electrolytic Capacitor 824k 400v
Abstract: ETD4916A ETD 39 x 20 x 13 siemens zener diode 100V DO-35 ferrite core geometry 3kw smps pfc STK2N50 500watts amplifier pcb layout r4849-a 0.5mh R4849-A
Text: AN827 APPLICATION NOTE A 500W HIGH POWER FACTOR WITH THE L4981A CONTINUOUS MODE IC The widespread use of passive AC/DC off-line converters causes low power factor and high line current harmonic distortion. To reduce these phenomena and to comply with relevant regulatory agency requirements , designers are employing active power factor correction in their off-line SMPS applications. This
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AN827
L4981A
L4981A
Philips Electrolytic Capacitor 824k 400v
ETD4916A
ETD 39 x 20 x 13
siemens zener diode 100V DO-35
ferrite core geometry
3kw smps pfc
STK2N50
500watts amplifier pcb layout
r4849-a 0.5mh
R4849-A
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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sono2
Abstract: mosfet 600V 10A ic
Text: MITSUBISHI Neh POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK1OKM-12 • Voss . 600V • rDS ON (MAX) .1.18Í2 • Id . 10A
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FK10KM-12
FK1OKM-12
150ns
UJ10l/l
sono2
mosfet 600V 10A ic
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK10SM-12 HIGH-SPEED SWITCHING USE FK1OSM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 <t>3.2 5.45 0.6 4 Q w r ' V D S S . 600V rDS ON (MAX) 1.18Í2 ID . 10A Integrated Fast Recovery Diode (M A X .)
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FK10SM-12
FK1OSM-12
150ns
D-250V
57KH23
571Q1
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