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    Samsung Electro-Mechanics CIGT201210UHR47MNE

    FIXED IND 470NH 3.6A 31MOHM SMD
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    DigiKey CIGT201210UHR47MNE Cut Tape 885 1
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    CIGT201210UHR47MNE Digi-Reel 885 1
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    Avnet Americas CIGT201210UHR47MNE Reel 16 Weeks 60,000
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    Mouser Electronics CIGT201210UHR47MNE 798
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    Zeus Battery Products PC12-210UHR

    12V 210WPC Ultra High Rate SLA
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    DigiKey PC12-210UHR 1
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    Samsung Electro-Mechanics CIGT201210UHR47SNE

    FIXED IND 470NH SMD
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    Samsung Electro-Mechanics CIGT201210UH1R5MNE

    FIXED IND 1.5UH 2.1A 97MOHM SMD
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    Samsung Electro-Mechanics CIGT201210UHR68MNE

    FIXED IND 680NH 3A 47 MOHM SMD
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    CIGT201210UHR68MNE Digi-Reel 1
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    CIGT201210UHR68MNE Reel 120,000
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    210UH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R1111N

    Abstract: R1111N181B r1111nxx1a
    Text: /2:#12,6 #483P$#/'2 5(*8/$725 544441#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-057-0006 LOW NOISE 150mA LDO REGULATOR 544441#6(5,(6 OUTLINE


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    EA-057-0006 150mA 210UHVLVWDQFH/ RXWSXW111N301B R1111N R1111NXX1A R1111Nxx1B R1111N R1111N181B PDF

    Untitled

    Abstract: No abstract text available
    Text: /2:#12,6 #483P$#/'2 5(*8/$725 544541#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-058-0006 LOW NOISE 150mA LDO REGULATOR 544541#6(5,(6 OUTLINE


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    EA-058-0006 150mA 210UHVLVWDQFH# R1121N301B R1121N R1121NXX1A R1121Nxx1B PDF

    54b6

    Abstract: 54B5 54B4 55b6 CE172
    Text: &026#6&+0/'2V#IRU#5 #8QLW 58653*#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-063-0006 CMOS 3CH-LDOs for RF Unit 58653*#6HULHV OUTLINE


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    EA-063-0006 210UHVLVWDQFH R5320G 54b6 54B5 54B4 55b6 CE172 PDF

    R1112N

    Abstract: 0737R 1433u
    Text: /2:#12,6 #483P$#/'2 5(*8/$725 544451#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-059-0006 LOW NOISE 150mA LDO REGULATOR 544451#6(5,(6 OUTLINE


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    EA-059-0006 150mA 210UHVLVWDQFH/ R1112N R11X2N301B R1112N 0737R 1433u PDF

    54B4

    Abstract: 54b5 55b4 4139 temperature R5321D 21018 RU54
    Text: &026#5&+0/'2V#IRU#5 #8QLW 58654'#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-062-0006 CMOS 2CH-LDOs for RF Unit 58654'#6(5,(6 OUTLINE \ FXUUHQW/# ORZ# QRLVH/# ORZ# 210UHVLVWDQFH# DQG# KLJK# ULSSOH# UHMHFWLRQ# E\# &026# SURFHVV1# 7KH# 58654'# 6HULHV# FRQWDLQ# WZR


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    EA-062-0006 210UHVLVWDQFH# R5321D 54B4 54b5 55b4 4139 temperature R5321D 21018 RU54 PDF

    irg7r313u

    Abstract: irg7r313 IRG7R313UPbF irg7r31 12A1000 EIA-541 IRFR120 JESD22-A114 igbt data
    Text: PD - 97484 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRG7R313UPbF EIA-481 EIA-541. EIA-481. irg7r313u irg7r313 IRG7R313UPbF irg7r31 12A1000 EIA-541 IRFR120 JESD22-A114 igbt data PDF

    smd diode B4

    Abstract: 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 sg6961 16N50
    Text: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION Boundary Mode PFC Controller Low Input Current THD Controlled On-Time PWM Zero-Current Detection Cycle-by-Cycle Current Limiting Leading-Edge Blanking instead of RC Filtering Low Start-up Current 10uA TYP.


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    SG6961 SG6961 IRO33 smd diode B4 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 16N50 PDF

    DSAQ

    Abstract: No abstract text available
    Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM


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    IRGP4069PbF IRGP4069-EPbF O-247AD DSAQ PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    7636A IRG7IA13UPbF O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96437 AUTOMOTIVE GRADE AUIRGP4062D1 AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses


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    AUIRGP4062D1 AUIRGP4062D1-E PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4062D1 AUIRGP4062D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA


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    AUIRGP4062D1 AUIRGP4062D1-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97747 IRG7CH73K10B-R Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 s Short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution


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    IRG7CH73K10B-R PDF

    IRG7R313U

    Abstract: irg7r313 irg7r31
    Text: PD - 97484 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    IRG7R313UPbF EIA-481 EIA-541. EIA-481. IRG7R313U irg7r313 irg7r31 PDF

    1cz21h

    Abstract: ic 1cz21h 1cz21h sharp PQ1CZ21H2ZPH variable frequency circuit diagram using IC 555 1cz21 6p6p
    Text: PQ1CZ21H2ZxH PQ1CZ21H2ZxH Low Dissipation Current at OFF-state Chopper Regulator • Outline Dimensions Features Unit:mm 1.Maximum switching current: 1.5A 2.Low dissipation current at OFF-state(Iqs:Max.1mA) 3.Built-in oscillation circuit (Oscillation frequency:TYP.100kHz)


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    PQ1CZ21H2ZxH 100kHz) 1CZ21H2ZZH: 1CZ21H2ZPH: 2200F OP06040A 1cz21h ic 1cz21h 1cz21h sharp PQ1CZ21H2ZPH variable frequency circuit diagram using IC 555 1cz21 6p6p PDF

    AUIRGB4062D1

    Abstract: AUGB4062D1 AUIRGSL4062D1 AUIRGS4062D AUIRGB4062D
    Text: PD - 30438 AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses


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    AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 AUGB4062D1 AUIRGSL4062D1 AUIRGS4062D AUIRGB4062D PDF

    CQ1265RT

    Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt
    Text: www.fairchildsemi.com FSCQ-Series FSCQ0565RT / FSCQ0765RT / FSCQ0965RT / FSCQ1265RT FSCQ1465RT / FSCQ1565RT / FSCQ1565RP Green Mode Fairchild Power Switch FPSTM Features • Optimized for Quasi-Resonant Converter (QRC) • Advanced Burst-Mode Operation for under 1W Standby


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    FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq1265 cq0565rt PDF

    1cz21h

    Abstract: ic 1cz21h 1cz21h sharp PQ1CZ21H2ZPH RS50K Toho Electronics OP06040
    Text: PQ1CZ21H2ZxH PQ1CZ21H2ZxH Low Dissipation Current at OFF-state Chopper Regulator • Outline Dimensions Features Unit:mm 1.Maximum switching current: 1.5A 2.Low dissipation current at OFF-state(Iqs:Max.1mA) 3.Built-in oscillation circuit (Oscillation frequency:TYP.100kHz)


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    PQ1CZ21H2ZxH 100kHz) 1CZ21H2ZZH: 1CZ21H2ZPH: RS50k 2200F 1cz21h ic 1cz21h 1cz21h sharp PQ1CZ21H2ZPH RS50K Toho Electronics OP06040 PDF

    R1210N

    Abstract: R1210N302C R1210N302D R1210N502C R1210N502D R1210N602C 76139 U33-14 m500ms P533
    Text: 62705608#3:0#6WHS0XS#'&2'& &219 57(5 545431±±5±#6(5,(6 $33/,&$7,21#0$18$/ NO. EA-064-0006 SOT-23-5 PWM Step-up DC/DC CONVERTER 545431ðð5ð#6(5,(6 OUTLINE 7KH#545431;5&2;5'#6HULHV#DUH#3:0#VWHS0XS#'&2'&# & \


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    EA-064-0006 OT-23-5 13Acqs 200mV 200mV 960mV 100mV R1210N R1210N302C R1210N302D R1210N502C R1210N502D R1210N602C 76139 U33-14 m500ms P533 PDF

    RR350

    Abstract: S100-200
    Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA


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    IRGP4069DPbF IRGP4069D-EPbF O-247AD RR350 S100-200 PDF

    b5 SMD zener

    Abstract: varistor 14 471 SG6961SZ diode 1N4148 SMD 16N50C3 16n50 capacitor 0.47uf 275v Electrolytic Capacitor 120uf 450v TRN0193 2n7002 smd
    Text: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ The SG6961 is an 8-pin boundary mode PFC controller IC intended for controlling PFC pre-regulators. The SG6961 has many new features. It provides a


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    SG6961 SG6961 IRO33 b5 SMD zener varistor 14 471 SG6961SZ diode 1N4148 SMD 16N50C3 16n50 capacitor 0.47uf 275v Electrolytic Capacitor 120uf 450v TRN0193 2n7002 smd PDF

    EER-4942

    Abstract: EER4942 FSCQ1565RP 6D-22 N15V 35V 1A Transformer specification 2200uf/35V diode zd201 47k 1kv C102
    Text: www.fairchildsemi.com AB-63 Color-TV Applications FSCQ1565RP − 198 Watts Application Output Power Input Voltage Output Voltage Max Current 8.5V (1A) C-TV 198W Universal Input 15V (1A) (90-270Vac) 140V (0.9A) 24V (2A) Features • • • • • • High Efficiency (>83% at 90Vac Input)


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    AB-63 FSCQ1565RP 90-270Vac) 90Vac EER4942 RT101 6D-22 BD101 IC101 FSCQ1565RP EER-4942 EER4942 6D-22 N15V 35V 1A Transformer specification 2200uf/35V diode zd201 47k 1kv C102 PDF

    irg7s313

    Abstract: No abstract text available
    Text: PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM l Low VCE on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability


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    7402A IRG7S313UPbF EIA-418. irg7s313 PDF

    Untitled

    Abstract: No abstract text available
    Text: CUSTOMER TERMINAL RoHS LE AD Pb —FREE Sn96% , Ag4% Yes Yes PART MUST SURFACE A IN S E R T IN FU LLY more than you e xpect W0F TO RECOMMENDED IVidcom G R ID 0.031(7) [.8 0 ] [3 7 .1 2 8 /.1 7 7 [3 .2 5 /4 .5 0 ] DOT LOCATES TERM ELECTRICAL SPECIFICATIONS @ 25°C u n le s s o th e rw ise n o te d :


    OCR Scan
    210uH 100kHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: CUSTOMER TERMINAL RoHS LE AD Pb —FREE S n96% , A g 4 X Yes Yes m o re th a n y o u e x p e c t IVidcom PART MUST INSERT FULLY TO SURFACE A IN RECOMMENDED GRID .020 SQ.(5) P C11 .1 0 0 /. 150 L' a iJ [2 .5 4 /3 .8 1 ] DOT LOCATES TERM. #1 ELECTRICAL SPECIFICATIONS 25°C u n less otherw ise noted:


    OCR Scan
    210uH 10kHz, 1250VAC, PDF