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    MOSFET 600V SWITCHING Search Results

    MOSFET 600V SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK4002DPH-E0#T2 Renesas Electronics Corporation 600V - 1A - MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    RJL60S5DPK-M0#T0 Renesas Electronics Corporation 600V - 20A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    RJK60S8DPK-M0#T0 Renesas Electronics Corporation 600V - 55A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    RJL60S5DPE-00#J3 Renesas Electronics Corporation 600V - 20A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    RJK60S7DPQ-E0#T2 Renesas Electronics Corporation 600V - 30A - Sj MOSFET High Speed Power Switching Visit Renesas Electronics Corporation

    MOSFET 600V SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    43N60

    Abstract: 40N60 max4340 MOSFET 40A 600V
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 200ns 200ns 43N60 40N60 40N60 O-264 max4340 MOSFET 40A 600V

    43N60

    Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 43N60 40N60 200ns O-264 43N60 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60

    w20nm

    Abstract: w20nm60 p20nm60fp P20NM60FP equivalent
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω


    Original     		PDF STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm w20nm60 p20nm60fp P20NM60FP equivalent

    Mosfet

    Abstract: SSF2N60F mosfet 600V 100A
    Text: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60F O220F p600V Mosfet SSF2N60F mosfet 600V 100A

    Mosfet

    Abstract: SSF2N60D1
    Text: SSF2N60D1 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.9Ω (typ.) ID 2A TO-252 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60D1 O-252 O-252ï Mosfet SSF2N60D1

    W20NM60

    Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STB20NM60 STB20NM60-1 W20NM60 P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
    Text: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60/-1 STP20NM60FP STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 STB20NM60-1 w20nm60 w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60

    Mosfet

    Abstract: SSF10N60F
    Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF10N60F O220F dev60F Mosfet SSF10N60F

    w20nm60

    Abstract: w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 STB20NM60 STB20NM60-1 P20NM60FP equivalent STP20NM60
    Text: STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A


    Original     		PDF STB20NM60-1 STP20NM60FP STB20NM60 STP20NM60 STW20NM60 O-247 O-220/FP STP20NM60 STB20NM60 w20nm60 w20nm60 equivalent p20nm60 P20NM60FP B20NM60 V2.1 P20NM60FP equivalent

    Mosfet

    Abstract: SSF10N60
    Text: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF10N60 O-220 inN60 Mosfet SSF10N60

    Mosfet

    Abstract: SSF2N60G
    Text: SSF2N60G 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.5Ω (typ.) ID 2A TO-251 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60G O-251 O-251ï Mosfet SSF2N60G

    Mosfet

    Abstract: SSF2N60D2
    Text: SSF2N60D2 600V N-Channel MOSFET Preliminary Main Product Characteristics VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2N60D2 O-252 O-252ï Mosfet SSF2N60D2

    Untitled

    Abstract: No abstract text available
    Text: N-Channel MOSFET 600V, 0.4 A, 8.5Ω General Description Features The MDZ1N60 uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.  VDS = 600V  ID = 0.4A  RDS ON ≤ 8.5Ω


    Original     		PDF MDZ1N60

    smps 5v 0.3A

    Abstract: N-Channel 600V MOSFET AF01N60C low vgs mosfet to-92
    Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical


    Original     		PDF AF01N60C AF01N60C -55oC 150oC smps 5v 0.3A N-Channel 600V MOSFET low vgs mosfet to-92

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 600V N-CHANNEL MOSFET AF01N60C General Description Features The AF01N60C is 0.3A 600V N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. • 0.3A, 600V, RDS on =12Ω Typical · · Low Gate Charge : 4.4nC Typical


    Original     		PDF AF01N60C -55oC 150oC AF01N60C

    b9nk60zd

    Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
    Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W


    Original     		PDF STB9NK60ZD STF9NK60ZD STP9NK60ZD D2PAK/TO-220FP/TO-220 STF9NK60ZD O-220FP O-220 b9nk60zd p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1

    coverter 24 DC a 12 DC

    Abstract: igbt mosfet driver
    Text: PSDM-6O / PSDM-6T Driver Modules www.schurter.com/pg86 600V IGBT/MOSFET Driver modules with integrated DC/DC converter 600V IGBT/MOSFET Driver modules with integrated DC/DC converter PSDM-6O Data transfer via transformer PSDM-6T (Data transfer via optocoupler)


    Original     		PDF com/pg86 PSDM-0DO2-5040 PSDM-0DT2-5020 coverter 24 DC a 12 DC igbt mosfet driver

    pj 996 diode

    Abstract: HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ
    Text: HV9106/HV9109 HV9106 HV9109 Preliminary High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +VIN Package Outlines BVDSS RDS ON Min Max Feedback Voltage 600V 20Ω 12V 450V ±1% 49% HV9106P HV9106PJ 600V 20Ω 12V 450V ±1% 99%


    Original     		PDF HV9106/HV9109 HV9106 HV9109 HV9106P HV9106PJ HV9109P HV9109PJ HV9106/09 HV9106/09 pj 996 diode HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ

    1NK60Z

    Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
    Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω


    Original     		PDF STD1LNK60Z-1 STQ1NK60ZR STN1NK60Z OT-223 STQ1NK60ZR 1NK60Z STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode

    IRFPC40

    Abstract: No abstract text available
    Text: IRFPC40 Data Sheet January 2002 6.8A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features • 6.8A, 600V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFPC40 IRFPC40

    4NC60

    Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4NC60 STB4NC60-1 STP4NC60FP

    STB4NC60A-1

    Abstract: STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) STB4NC60A-1 STP4NC60AFP

    4NC60

    Abstract: STB4NC60A-1 STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 4NC60 STB4NC60A-1 STP4NC60AFP

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS ADVANCE INFORMATION HiPerFET Power MOSFET 43N60 IXFN 40N60 ix f n Single MOSFET Die IXFK 43N60 IXFK 40N60 V DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D Kr DS on 0.1 3Ü. 0.1 50. 0.1 30 0.1 50 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol


    OCR Scan     		PDF 43N60 40N60 200ns O-264