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    MOSFET 6R199 Search Results

    MOSFET 6R199 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 6R199 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6R199P mosfet

    Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r

    6R199P mosfet

    Abstract: mosfet 6R199 IPL60R199CP Benchmark MOSFETs
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet mosfet 6R199 IPL60R199CP Benchmark MOSFETs

    6R199

    Abstract: Diode SMD SJ 99
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm 6R199 Diode SMD SJ 99

    6R199P DATA SHEET

    Abstract: ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P DATA SHEET ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description Pr The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm²

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199

    mosfet 6R199

    Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS V 0.199 Ω R DS on ,max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		PDF IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A

    DIODE ED 99

    Abstract: mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS 0.199 Ω R DS on ,max 33 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability


    Original     		PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC

    6R199P

    Abstract: 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220-3-31 SP000094146 6R199P 6R199P 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C

    6r199p

    Abstract: IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199
    Text: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6r199p IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199

    marking code ff p SMD Transistor

    Abstract: 6R199P
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P marking code ff p SMD Transistor 6R199P

    6R199P mosfet

    Abstract: No abstract text available
    Text: IPI60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6R199P mosfet

    6R199P mosfet

    Abstract: 6R199P 6R199P TO220
    Text: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6R199P mosfet 6R199P 6R199P TO220

    6R199P

    Abstract: 6R199P mosfet IPW60R199CP PG-TO-247-3 6R199 JESD22 SP000089802 6R19
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet IPW60R199CP PG-TO-247-3 6R199 JESD22 SP000089802 6R19

    Untitled

    Abstract: No abstract text available
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 32 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P

    6R199P

    Abstract: 6R199P mosfet 6R199P+mosfet
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet 6R199P+mosfet

    ISS 99 diode

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220-3-1 SP000084278 6R199P ISS 99 diode

    DF 331 TRANSISTOR

    Abstract: No abstract text available
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220-3-31 SP000094146 6R199P DF 331 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 33 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P

    6R199

    Abstract: 6R199P 6R199P mosfet 6R199P+mosfet
    Text: IPA60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220 6R199P 6R199 6R199P 6R199P mosfet 6R199P+mosfet

    6r199p

    Abstract: mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199
    Text: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6r199p mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199

    6R199

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6R199

    ISS 99 diode

    Abstract: 6R199P IPW60R199 6R19 IPW60R199CP
    Text: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3-1 IPW60R199CP PG-TO247-3-1 SP000089802 6R199P ISS 99 diode 6R199P IPW60R199 6R19

    6R199P

    Abstract: IPA60R199CP 6R199P mosfet
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability PG-TO220FP • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220FP SP000094146 6R199P 6R199P IPA60R199CP 6R199P mosfet