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    MOSFET 7121 Search Results

    MOSFET 7121 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 7121 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 BUK7Y12-100E N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK7Y12-100E LFPAK56

    tr1007

    Abstract: MOSFET 7121
    Text: Ordering number : ENN7121 CPH3317 P-Channel Silicon MOSFET CPH3317 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3317] 2.9 0.15 0.6 0.4 0.2 • 3 2 1


    Original     		PDF ENN7121 CPH3317 CPH3317] tr1007 MOSFET 7121

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


    Original     		PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


    Original     		PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w

    i2c-bus "volume control"

    Abstract: TDA3653B TDA3810 vga to tv converter ic audio video uhf transmitter circuit TDA8361 audio video uhf transmitter tda8362 tda vertical IC tv crt TDA2595
    Text: Philips Semiconductors Semiconductors for Televsion and Video Systems Functional index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet.


    Original     		PDF SAB6456; SAB6456T divide-by-64/divide-by-256 TDA8725T TSA5511 TSA5512 TSA5514 NE/SA5204A NE/SA/SE5205A NE/SA5209 i2c-bus "volume control" TDA3653B TDA3810 vga to tv converter ic audio video uhf transmitter circuit TDA8361 audio video uhf transmitter tda8362 tda vertical IC tv crt TDA2595

    SMPS flyback 2kW

    Abstract: schematic diagram smps VIPer 50A VIPER100 Application Note VIPer 50A VIPER100 AN946 viper flyback transformer an946 VIPER flyback 100W schematic mans EKR 1000 Self Oscillating Flyback Converters
    Text: AN946 APPLICATION NOTE VIPer100 THE MOST ADVANCED MONOLITHIC SOLUTION FOR OFF-LINE PRIMARY CONVERTERS by A. Russo, A. Bailly, A. Vitanza, R. Musarra VIPer100/100A and VIPer50/50A combines on the same silicon chip a state-of-the-art PWM circuit Following the ever increasing consumer market


    Original     		PDF AN946 VIPer100 VIPer100/100A VIPer50/50A O-220 PowerSO-10 SMPS flyback 2kW schematic diagram smps VIPer 50A VIPER100 Application Note VIPer 50A AN946 viper flyback transformer an946 VIPER flyback 100W schematic mans EKR 1000 Self Oscillating Flyback Converters

    tda vertical IC tv crt

    Abstract: colour tv sound system ic TV horizontal Deflection Systems LCD TV column driver IC Large Panels datasheet TRIAC MAC 218 UHF preamplifier for BF998 vertical deflection oscillator in television TDA audio power amplifier audio video uhf tv transmitter tda audio amplifier
    Text: Philips Semiconductors Semiconductors for Television and Video Systems Index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet. PAGE


    Original     		PDF 80C528; 83C528 83C145; 83C845; 83C055; 87C055 83C654 80C652; 83C652 84C44X; tda vertical IC tv crt colour tv sound system ic TV horizontal Deflection Systems LCD TV column driver IC Large Panels datasheet TRIAC MAC 218 UHF preamplifier for BF998 vertical deflection oscillator in television TDA audio power amplifier audio video uhf tv transmitter tda audio amplifier

    driver IC for IRF540 MOSFET

    Abstract: MOSFET 7121 mosfet 7124 12v incandescent lamp driver
    Text: MIC5020 IMCaSL Current-Sensing Low-Side MOSFET Driver General Description Features The MIC5020 low-side MOSFET driver is designed to oper­ ate at frequencies greater than 100kHz 5kHz PWM tor 2% to 100% duty cycle and is an ideal choice for high-speed applications such as motor control, SMPS (switch mode


    OCR Scan     		PDF MIC5020 100kHz TheMIC5020 2000pF 175ns. driver IC for IRF540 MOSFET MOSFET 7121 mosfet 7124 12v incandescent lamp driver

    0809 al

    Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
    Text: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE


    OCR Scan     		PDF T-91-20 O-240) PC-029« 0809 al HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D

    IC SO5

    Abstract: FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F BUV298V JUV298F transistor BC 583
    Text: 30E D • 7121237 G03GMQÔ 2 WÊ SCS-THOMSON J _ Ü ^ H0"S«NJUV298F HLKgüWWi T-3S'i5 BUV298V NPN TRANSISTOR POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS


    OCR Scan     		PDF JUV298F BUV298V BUV298V BUV298F SC04S30 T-91-20 O-240) IC SO5 FOR TRANSISTOR BC 149 B transistor Bc 287 R3315 BUV298F JUV298F transistor BC 583

    8051 microcontroller LED dot matrix 8*8

    Abstract: RADIO RECEIVER IC tea5591 OQ8844T tda1072 philips ic fm am stereo receiver philips all transistor car radio PCF85xxC-2 Family car amplifier class d tea5591a 8051 microcontroller LED dot matrix
    Text: Philips Semiconductors Semiconductors for Radio, Audio and CD/DVD Systems_ Functional Index Types added to the range since the last issue of the IC01 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet.


    OCR Scan     		PDF TDA1072A TDA1072AT TDA1572 TDA1572T TEA5551T TEA6200 TEA5570 TEA5591 TEA5591A TEA5594 8051 microcontroller LED dot matrix 8*8 RADIO RECEIVER IC tea5591 OQ8844T tda1072 philips ic fm am stereo receiver philips all transistor car radio PCF85xxC-2 Family car amplifier class d 8051 microcontroller LED dot matrix

    L6569A

    Abstract: 35 khz ballast 18w 12v cfl ballast bridge RECTIFIER GI L6569 delux MOSFET IRF 380
    Text: L6569 L6569A SGS-THOMSON IMradlLllOTMDIgi HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR PRELIMINARY DATA • TECHNOLOGY: BCD "OFF-LINE” ■ FLOATING SUPPLY VOLTAGE UP TO 600V ■ GND REFERRED SUPPLY VOLTAGE UP TO 18V ■ DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA


    OCR Scan     		PDF L6569 L6569A 270mA 170mA L6569/L6569A L6569D/L6569AD L6569/L6569A L6569A 35 khz ballast 18w 12v cfl ballast bridge RECTIFIER GI L6569 delux MOSFET IRF 380

    SGS40TA045

    Abstract: No abstract text available
    Text: 3QE » m 7 eJ2cî 5 3 7 0030b4fi Q • rZZ SCS-THOMSON “ 7# ^DOæULllOïïiOOaflûS t-w s i S G S 4 0 T A 045 S G S- TH O M SO N NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . ADAPTED FOR HIGH POWER SWITCHING


    OCR Scan     		PDF 0030b4fi T0-240) T-91-20 O-240) PC-029« SGS40TA045

    Diode SMD ED 7ca

    Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
    Text: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.


    OCR Scan     		PDF STTA806M Diode SMD ED 7ca alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C

    transistor 467 sgs

    Abstract: 0809 al diode sg 5 ts sgs30da070
    Text: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE


    OCR Scan     		PDF O-240) PC-029« transistor 467 sgs 0809 al diode sg 5 ts sgs30da070

    sc-0352

    Abstract: pin diagram of ic 1496 LC 0809 ESM6045AF ESM6045AV NPN DARLINGTON POWER module isotop si272
    Text: 30E G l J> m SCS-THOM SON HJCTlMOes QÜ3aMbfl T ESM6045AF ESM6045AV S 6 S-THOMSÔN NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE • VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS ■ EASY TO MOUNT


    OCR Scan     		PDF ESM6045AF ESM6045AV ESM6045AV T-91-20 O-240) sc-0352 pin diagram of ic 1496 LC 0809 ESM6045AF NPN DARLINGTON POWER module isotop si272

    NH245

    Abstract: GQ304 TRANSISTOR L 287 A
    Text: 3DE D • S G S -T H O M S O N G W IIS IIL I^ IM D O S 7^2^237 DD3DMSÜ T ES M 7 5 4 5 DF ES M 7 5 4 5 DV S G S - THOMSON NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE


    OCR Scan     		PDF O-240) PC-029« NH245 GQ304 TRANSISTOR L 287 A

    STF6045DV

    Abstract: BD405 transistor b 1185 BD 149 transistor
    Text: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL


    OCR Scan     		PDF DG30SDb STF6045DF STF6045DV O-240) PC-029« STF6045DV BD405 transistor b 1185 BD 149 transistor

    BUT23

    Abstract: pin diagram of ic 1496
    Text: 3D E D • 7^2^37 QG3G3TQ 1 SCS-THOMSOW s 6 S THQMS0N BUT232F I t i « ! "T-SVI5 BUT232V NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS « ISOLATED CASE 2500V RMS


    OCR Scan     		PDF BUT232F BUT232V BUT232V BUT232F SC04840 O-240) PC-029« BUT23 pin diagram of ic 1496

    TSG25N100DV

    Abstract: TSG25N100DF ISG25 3641b
    Text: 30E D S G S -T H O M [* [F 3 m m 7 cj a c}237 QQ3QS24 M • S O N T IS G 2 5 N 1 0 0 D F [IO T 2 [* S T S G 2 5 N 1 O O D V ISOLATED GATE BIPOLAR TRANSISTOR (IGBT) _ ISOTOP POWER MODULE S G S-THOMSON ■ ■ . . . VOLTAGE-CONTROLLED GATE LOW ON-VOLTAGE DROP VcE(sat)


    OCR Scan     		PDF QD30524 ISG25N100DF TSG25N100DV TSG25N100DV TSG25N100DF T-91-20 O-240) TSG25N100DF ISG25 3641b

    STF8045DV

    Abstract: STF8045DF
    Text: 3DE D • T'iS'iea? GG3DS1Ô 1 SCS-THOMSON ^ ^ 2.5 IILIim «! STF8045DF STF8045DV S G S-THOMSON NPN DARLINGTON POWER MODULE . . . . ■ . ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL


    OCR Scan     		PDF STF8045DF STF8045DV STF8045DV T-91-20 O-240) STF8045DF

    5358A

    Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
    Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE


    OCR Scan     		PDF Q0305Sb 251F/V TSD4M251F TSD4M251V STH33N20FI T-91-20 O-240) PC-029« 5358A d 317 transistor TSD4M251V SP 358 s

    NPN DARLINGTON POWER MODULE

    Abstract: SGS50DB040D 9120 mosfet SGS50D
    Text: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE


    OCR Scan     		PDF DD3D72D O-240) PC-029« NPN DARLINGTON POWER MODULE SGS50DB040D 9120 mosfet SGS50D

    FR 9120

    Abstract: ESM3030DV
    Text: 3QE e ? D • 7^5^537 QG3Q432 T ■ ESM3030DF ESM3030DV SGS-THOMSON itLHOTO «! S G S-THOMSON ' NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE


    OCR Scan     		PDF 0G30432 ESM3030DF ESM3030DV T-91-20 O-240) FR 9120