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5358A Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE	OCR Scan	PDF	Q0305Sb 251F/V TSD4M251F TSD4M251V STH33N20FI T-91-20 O-240) PC-029« 5358A d 317 transistor TSD4M251V SP 358 s

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5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

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Q0305Sb 251F/V TSD4M251F TSD4M251V STH33N20FI T-91-20 O-240) PC-029« 5358A d 317 transistor TSD4M251V SP 358 s