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    MOSFET 7311 Search Results

    MOSFET 7311 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 7311 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8409 diode

    Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
    Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1--E1 08-Apr-05 8409 diode 8409 J-STD-020A S-41816 diode 8409 marking 8409

    diode 8409

    Abstract: marking 8409 8409 diode
    Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1--E1 S-41816--Rev. 11-Oct-04 diode 8409 marking 8409 8409 diode

    SI7465DP-T1-E3

    Abstract: si7465 Si7465DP
    Text: Si7465DP Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (Ω) ID (A) 0.064 @ VGS = –10 V –5 0.080 @ VGS = –4.5 V –4.5 Qg (Typ) 26 FEATURES • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7465DP 07-mm Si7465DP-T1--E3 08-Apr-05 SI7465DP-T1-E3 si7465

    Untitled

    Abstract: No abstract text available
    Text: Si8409DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () ID (A) 0.046 at VGS = -4.5 V -6.3 0.065 at VGS = -2.5 V -5.3 Qg (TYP.) 17 • TrenchFET power MOSFET • MICRO FOOT® chipscale packaging reduces


    Original     		PDF Si8409DB Si8401DB 840xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI7465DP

    Abstract: No abstract text available
    Text: Si7465DP New Product Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.064 @ VGS = −10 V −5 0.080 @ VGS = −4.5 V −4.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile


    Original     		PDF Si7465DP 07-mm Si7465DP-T1--E3 S-41824--Rev. 11-Oct-04

    Untitled

    Abstract: No abstract text available
    Text: Si7465DP Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (Ω) ID (A) 0.064 @ VGS = –10 V –5 0.080 @ VGS = –4.5 V –4.5 Qg (Typ) 26 FEATURES • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7465DP 07-mm Si7465DP-T1--E3 18-Jul-08

    SI7465DP-T1-E3

    Abstract: SI7465DP
    Text: Si7465DP Vishay Siliconix New Product P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (Ω) ID (A) 0.064 @ VGS = –10 V –5 0.080 @ VGS = –4.5 V –4.5 Qg (Typ) 26 FEATURES • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7465DP 07-mm Si7465DP-T1--E3 S-51566-Rev. 07-Nov-05 SI7465DP-T1-E3

    Si7465DP

    Abstract: Si7465DP-T1-E3 Si7465DP-T1-GE3
    Text: Si7465DP Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7465DP Si7465DP-T1-E3 Si7465DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 Qg (Typ) 13 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space


    Original     		PDF Si7220DN Si7220DN-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7465DP Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7465DP Si7465DP-T1-E3 Si7465DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7465DP Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7465DP Si7465DP-T1-E3 Si7465DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7465DP Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7465DP Si7465DP-T1-E3 Si7465DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7465DP

    Abstract: Si7465DP-T1-E3 si7465 Si7465DP-T1-GE3
    Text: Si7465DP Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.064 at VGS = - 10 V -5 0.080 at VGS = - 4.5 V - 4.5 Qg (Typ.) 26 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7465DP Si7465DP-T1-E3 Si7465DP-T1-GE3 18-Jul-08 si7465

    1212-8

    Abstract: Si7220DN
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 Qg (Typ) 13 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space


    Original     		PDF Si7220DN Si7220DN-T1--E3 08-Apr-05 1212-8

    Si7220DN

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 Qg (Typ) 13 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space


    Original     		PDF Si7220DN Si7220DN-T1--E3 S-51128--Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: references fixed Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 Qg (Typ) 13 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space


    Original     		PDF Si7220DN Si7220DN-T1--E3 S-51128--Rev. 13-Jun-05

    Si7220DN

    Abstract: SI7220DN-T1-GE3
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7220DN

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7220DN Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.060 at VGS = 10 V 4.8 0.075 at VGS = 4.5 V 4.3 Qg (Typ.) 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si7220DN Si7220DN-T1-E3 Si7220DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8401DB

    Abstract: DG3000
    Text: Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8409DB Si8401DB Si8409DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DG3000