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    MOSFET 75V 120A Search Results

    MOSFET 75V 120A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 75V 120A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P140NF75

    Abstract: STP140NF75 STB140NF75T4 B140NF75 STB140NF75 STB140NF75-1 p140nf
    Text: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)


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    STP140NF75 STB140NF75 STB140NF75-1 D2PAK/I2/TO-220 STB140NF75 O-220 P140NF75 STP140NF75 STB140NF75T4 B140NF75 STB140NF75-1 p140nf PDF

    Untitled

    Abstract: No abstract text available
    Text: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)


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    STP140NF75 STB140NF75 STB140NF75-1 D2PAK/I2/TO-220 STB140NF75 O-220 PDF

    p140nf

    Abstract: p140n P140NF75
    Text: STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1)


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    STP140NF75 STB140NF75 STB140NF75-1 D2PAK/I2/TO-220 STB140NF75-1 O-220 p140nf p140n P140NF75 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)


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    STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STP160N75F3 O-220 O-247 PDF

    STW160N75F3

    Abstract: STP160N75F3 160N75F3 JESD97 STB160N75F3 VDD-375
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET Power MOSFET Features Type VDSS RDS on (max.) ID STB160N75F3 75V 3.7 mΩ 120 A(1) 3 1 STP160N75F3 75V 4 mΩ 120 A(1) STW160N75F3 75V 4 mΩ 120 A(1)


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    STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STP160N75F3 O-220 O-247 STW160N75F3 160N75F3 JESD97 STB160N75F3 VDD-375 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3


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    STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STP160N75F3 O-220 O-247 PDF

    160N75F3

    Abstract: STP160N75F3 JESD97 STB160N75F3 STW160N75F3 m 0409 STP160
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3


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    STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STP160N75F3 O-220 O-247 160N75F3 JESD97 STB160N75F3 STW160N75F3 m 0409 STP160 PDF

    Untitled

    Abstract: No abstract text available
    Text: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3


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    STB160N75F3 STP160N75F3 STW160N75F3 O-220 O-247 STW160N75F3 O-220 O-247 PDF

    STW220NF75

    Abstract: Mosfet 75V 120A
    Text: STW220NF75 N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW220NF75 • ■ ■ VDSS RDS on ID 75V <0.0044Ω 120A(*) TYPICAL RDS(on) = 0.004Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of


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    STW220NF75 O-247 STW220NF75 Mosfet 75V 120A PDF

    Power Mosfet 75V 120A

    Abstract: STW220NF75
    Text: STW220NF75 N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW220NF75 VDSS RDS on ID 75V <0.0044Ω 120A(*) TYPICAL RDS(on) = 0.004Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED • ■ ■ DESCRIPTION This Power MOSFET is the latest development of


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    STW220NF75 O-247 Power Mosfet 75V 120A STW220NF75 PDF

    Mosfet

    Abstract: SSPL7508
    Text: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and


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    SSPL7508 25mohm O-220 to175 Mosfet SSPL7508 PDF

    FDP023N08

    Abstract: FDP023N08B
    Text: FDP023N08B_F102 N-Channel PowerTrench MOSFET 75V, 242A, 2.35mΩ Features Description • RDS on = 1.96mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB031N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast switching speed


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    FDB031N08 FDB031N08 PDF

    fda032n08

    Abstract: Power Mosfet 75V 120A
    Text: FDA032N08 tm N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed


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    FDA032N08 FDA032N08 Power Mosfet 75V 120A PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP032N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast switching speed


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    FDP032N08 FDP032N08 O-220 PDF

    FDB08

    Abstract: FDB088N08
    Text: FDB088N08 N-Channel PowerTrench MOSFET 75V, 85A, 8.8mΩ Features Description • RDS on = 7.3 mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast Switching Speed


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    FDB088N08 FDB08 FDB088N08 PDF

    FDB031N08

    Abstract: No abstract text available
    Text: FDB031N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench process that has been espe- • Fast switching speed


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    FDB031N08 FDB031N08 PDF

    FDP032N08

    Abstract: No abstract text available
    Text: FDP032N08 N-Channel PowerTrench MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s adcanced PowerTrench® process that has been espe- • Fast switching speed


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    FDP032N08 FDP032N08 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP96T07GS-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 75V RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 4.5m 120A S Description


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    AP96T07GS-HF O-263 100us 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: AP96T07GP-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 75V 4.2m 120A S Description


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    AP96T07GP-HF O-220 100us 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N075T2 IXTP120N075T2 VDSS ID25 = 75V = 120A Ω ≤ 7.7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


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    IXTA120N075T2 IXTP120N075T2 O-263 120N075T2 0-29-08-A PDF

    IXTP120N075T2

    Abstract: Power Mosfet 75V 120A IXTA120N075T2 to220 3 lead plastic package to220 DS100051
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N075T2 IXTP120N075T2 VDSS ID25 = 75V = 120A Ω ≤ 7.7mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75


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    IXTA120N075T2 IXTP120N075T2 O-263 120N075T2 0-29-08-A IXTP120N075T2 Power Mosfet 75V 120A IXTA120N075T2 to220 3 lead plastic package to220 DS100051 PDF

    Untitled

    Abstract: No abstract text available
    Text: STW220NF75 N-CHANNEL 75V - 0.004 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW220NF75 VDSS RDS on ID 75V <0.0044Ω 120A(*) ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s


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    STW220NF75 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP032N08 N-Channel PowerTrench tm MOSFET 75V, 235A, 3.2mΩ Features Description • RDS on = 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on)


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    FDP032N08 O-220 PDF