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    MOSFET A0531 Search Results

    MOSFET A0531 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET A0531 Datasheets Context Search

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    MOSFET A0531

    Abstract: A0531
    Text: SCH2411 Ordering number : ENA0531 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2411 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original     		PDF SCH2411 ENA0531 PW10s, 900mm20 A0531-4/4 MOSFET A0531 A0531

    MOSFET A0531

    Abstract: SCH24 A0531
    Text: SCH2411 注文コード No. N A 0 5 3 1 三洋半導体データシート N SCH2411 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


    Original     		PDF SCH2411 900mm2 100mA 100mA, 200mA 900mm2 IT13432 A0531-3/4 MOSFET A0531 SCH24 A0531