Untitled
Abstract: No abstract text available
Text: tSENSITRON SPM6M050-010D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL
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SPM6M050-010D
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SPM6M050-010D
Abstract: No abstract text available
Text: SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL
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SPM6M050-010D
SPM6M050-010D
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fet_11111.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Amplify and Shift EPAD Schematic no. fet_11111.0 MOSFET Output with an Operational Amplifier Description This circuit shows an EPAD MOSFET and resistor network with an output that can scaled to any desired voltage VO. By careful selection of the EPAD MOSFET and resistor values as well as resistor
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ADVANCED LINEAR DEVICES
Abstract: design ideas ALD1108E ALD110908 ALD1712 ALD1721 ALD1722 ALD1726 ideas circuit ideas
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11111.0 Amplify and Shift EPAD MOSFET Output with an Operational Amplifier Description This circuit shows an EPAD MOSFET and resistor network with an output that can scaled to any desired voltage VO. By careful selection of the EPAD MOSFET and resistor values as well as resistor
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ALD1108E,
ALD110908,
ALD1712,
ALD1721,
ALD1722,
ALD1726
ADVANCED LINEAR DEVICES
design ideas
ALD1108E
ALD110908
ALD1712
ALD1721
ALD1722
ALD1726
ideas
circuit ideas
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2P50EG
Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
O-220
MTP2P50E/D
2P50EG
2P50
2p50e
AN569
MTP2P50E
MTP2P50EG
mosfet transistor 400 volts.100 amperes
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Untitled
Abstract: No abstract text available
Text: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTP2P50E
MTP2P50E/D
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2 sd 586
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M070-020D
/-20V
125oC
2 sd 586
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optical mosfet
Abstract: SPM6M070-020D
Text: SENSITRON SEMICONDUCTOR SPM6M070-020D TECHNICAL DATA Datasheet 4171, Rev. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M070-020D
/-20V
optical mosfet
SPM6M070-020D
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mosfet transistor 400 volts.100 amperes
Abstract: No abstract text available
Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTB2P50E
MTB2P50E/D
mosfet transistor 400 volts.100 amperes
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Amp. mosfet 1000 watt
Abstract: AN569 MTB2P50E MTB2P50ET4 mosfet transistor 400 volts.100 amperes
Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTB2P50E
MTB2P50E/D
Amp. mosfet 1000 watt
AN569
MTB2P50E
MTB2P50ET4
mosfet transistor 400 volts.100 amperes
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t2p50e
Abstract: p50eg AN569 MTB2P50E MTB2P50ET4 MTB2P50ET4G mosfet transistor 400 volts.100 amperes ww h 845 1 r
Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTB2P50E
MTB2P50E/D
t2p50e
p50eg
AN569
MTB2P50E
MTB2P50ET4
MTB2P50ET4G
mosfet transistor 400 volts.100 amperes
ww h 845 1 r
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AN569
Abstract: MTP1N50E mtp1n
Text: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to
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MTP1N50E
r14525
MTP1N50E/D
AN569
MTP1N50E
mtp1n
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
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SPM6M080-010D
125oC
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adc 0808 internal circuit diagram
Abstract: TB-547 AN569 MTW6N100E MTW6N100
Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW6N100E
r14525
MTW6N100E/D
adc 0808 internal circuit diagram
TB-547
AN569
MTW6N100E
MTW6N100
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AN569
Abstract: MTW10N100E
Text: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW10N100E
O-247
r14525
MTW10N100E/D
AN569
MTW10N100E
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12N70
Abstract: UTC12N70
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
12N70L
QW-R502-220
UTC12N70
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ut40n03
Abstract: UT-40 a1693
Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
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UT40N03
UT40N03
UT40N03L-TN3-R
UT40N03G-TN3-R
UT40N03L-TM3-T
UT40N03G-TM3-T
O-252
O-251
QW-R502-160
UT-40
a1693
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MTY25N60E
Abstract: AN569 TL 188 TRANSISTOR PIN DIAGRAM
Text: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTY25N60E
O-264
r14525
MTY25N60E/D
MTY25N60E
AN569
TL 188 TRANSISTOR PIN DIAGRAM
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12n60a
Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60a
12N60L
12n60 dc
12n60b
12A 650V MOSFET
12N-60a
power mosfet 200A
12N60L-x-TF3-T
12N60G
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AN569
Abstract: MTW7N80E
Text: MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW7N80E
r14525
MTW7N80E/D
AN569
MTW7N80E
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adc 0808 internal circuit diagram
Abstract: No abstract text available
Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW6N100E
O-247
MTW6N100E/D
adc 0808 internal circuit diagram
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t2p50e
Abstract: No abstract text available
Text: MTB2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed
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MTB2P50E
MTB2P50E/D
t2p50e
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AN569
Abstract: MTW20N50E
Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW20N50E
r14525
MTW20N50E/D
AN569
MTW20N50E
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4096 IC 14 pins
Abstract: No abstract text available
Text: SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED
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SPM6M060-010D
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125oC
4096 IC 14 pins
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