25c2625
Abstract: MHW1910 MHW1910-1 mos 4801
Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ
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301AW
MHW1910
25c2625
MHW1910-1
mos 4801
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and
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MMRF1014NT1
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mosfet amplifier class ab rf
Abstract: QPP-001 "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB
Text: QuikPAC Data QPP-001 30 W, 869-894 MHz Class AB Amplifier General description: Features: The QPP-001 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with
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QPP-001
QPP-001
180max
mosfet amplifier class ab rf
"RF MOSFET CLASS AB
mosfet rf class ab
RF MOSFET CLASS AB
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"RF MOSFET CLASS AB
Abstract: RF MOSFET CLASS AB
Text: QuikPAC Data QPP-002 30 W, 925-960 MHz Class AB Amplifier General description: Features: The QPP-002 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with
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QPP-002
QPP-002
180max
"RF MOSFET CLASS AB
RF MOSFET CLASS AB
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500 watts amplifier schematic diagram pcb layout
Abstract: MRF19090
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier
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MRF19090
MRF19090S
MRF19090
500 watts amplifier schematic diagram pcb layout
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MRF19030
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
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MRF19030
MRF19030S
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100B102JT50XT
Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio
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MRF284LR1
MRF284
100B102JT50XT
100B120JT500XT
100B100JT500XT
CDR33BX104AKYS
MRF284
MRF284LR1
T491X226K035AT
100B510JT500XT
A04T-5
microstrip resistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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z40 mosfet
Abstract: MRF19120
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
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z40 mosfet
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Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
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Z-34
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
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capacitor 226 35K
Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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capacitor 226 35K
105 35K capacitor
226 35K capacitor
capacitor 104 Z30
electrolytic capacitor 226 35k
capacitor 104 35k
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MRF21010
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
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Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
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1000w power amplifier circuit diagram
Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply
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12MHz
O-247
300VDC
AN749,
DL110,
1000w power amplifier circuit diagram
800w power amplifier circuit diagram
1200w power amplifier circuit diagram
amplifier circuit diagram class D 1000w
500 watt mosfet power amplifier circuit diagram
27.12MHz power amplifier
APT9701
1000 watt ferrite transformer
ar164
hf 800w power Amplifier diagram
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apt449a
Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications
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ARF448A/B,
APT9702.
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APT9801.
apt449a
APT9701
APT9702
hf class AB power amplifier mosfet
uhf 200w mosfet
mosfet HF amplifier
APT9801
200W PUSH-PULL
what is the drawback of operating system
HF Amplifier 200w
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9702a
Abstract: ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar
Text: APPLICATION NOTE APT 9702a A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power
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50MHz.
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9702a
ARF448A
ARF448
power amplifier mosfet up to 50mhz
ARF460
ARF446
Lumped
40.68mhz
ARF448 equivalent
wound bifilar
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power amplifier mosfet up to 50mhz
Abstract: APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448
Text: APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power
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100MHz.
power amplifier mosfet up to 50mhz
APT9702
5961007601
40.68mhz
ARF446
ARF448A
ARF448 equivalent
hf class AB power amplifier mosfet
lumped
ARF448
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DE275-102N06X2A
Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
Text: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate
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56MHz
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DE275X2-102N06A
0-471-03018-X
DE275-102N06X2A
102n06x2a
amplifier circuit diagram class D 1000w
circuit diagram of 13.56MHz RF Generator plasma
DEIC420 RF MOSFET Gate Driver IC
13.56Mhz rf 1W amplifier module
circuit diagram of 13.56MHz RF Generator
Class E power amplifier, 13.56MHz
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JESD22-C101A
Abstract: PD27025F RF MOSFET CLASS AB
Text: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station
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JESD22-C101A
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JESD22-C101A
Abstract: PD25025F RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A
Text: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station
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JESD22-C101A
RF MOSFET CLASS AB
mosfet rf class ab
JESD22-A115A
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JESD22-C101A
Abstract: PD27025F
Text: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station
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JESD22-C101A
Abstract: PD25025F rf transistor 2.5GHz RF MOSFET CLASS AB
Text: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station
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PD25025F
330mA
100kHz
JESD22-C101A
rf transistor 2.5GHz
RF MOSFET CLASS AB
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