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    T491X226K035AT Price and Stock

    KEMET Corporation T491X226K035AT

    CAP TANT 22UF 10% 35V 2917
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    DigiKey T491X226K035AT Cut Tape 4,305 1
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    KEMET Corporation T491X226K035AT7280

    CAP TANT 22UF 10% 35V 2917
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    KEMET Corporation T491X226K035ATAUTO

    CAP TANT 22UF 10% 35V 2917
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    DigiKey T491X226K035ATAUTO Digi-Reel 390 1
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    KEMET Corporation T491X226K035AT2478

    CAP TANT 22UF 10% 35V 2917
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    KEMET Corporation T491X226K035AT4539

    CAP TANT 22UF 10% 35V 2917
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    T491X226K035AT Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T491X226K035AT KEMET Tantalum Capacitors, Capacitors, CAP TANT 22UF 35V 10% 2917 Original PDF
    T491X226K035AT KEMET Solid Tantalum Chip Capacitors / T491 Series - Precision Molded Chip; Capacitance [nom]: 22uF; Working Voltage (Vdc)[max]: 35V; Capacitance Tolerance: +/-10%; Dielectric: Tantalum, Solid; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500 Original PDF
    T491X226K035AT2478 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035AT24787027 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035AT4106 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035AT4160 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035AT4539 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035AT4777 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035AT7280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035ATAU007280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035ATAU50 KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035ATAUTO KEMET Capacitors - Tantalum Capacitors - CAP TANT 22UF 10% 35V 2917 Original PDF
    T491X226K035ATC7280 KEMET CAP 22UF 35V 10% TANT SMD-7343-43 TR-13-PL SN100% Original PDF

    T491X226K035AT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T491X226K035ATAUTO Capacitor, tantalum, 22 uF, 7343, +/-10% Tol, 35V@85C H X T S W A L Dimensions mm S Anode End View F + P R Note: P, R: Termination cut-out at KEMET’s option, either end Specifications ID Dimension Tolerance L W H F S B X P R T A G E


    Original     		T491X226K035ATAUTO PDF

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H PDF

    GR331

    Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


    Original     		N1200 TZ03Z2R3E169B00 TZ03Z050E169B00 TZ03Z070E169B00 TZ03Z100E169B00 TZ03T110E169B00 TZ03R200E169B00 TZ03R300E169B00 TZ03P450E169B00 GR331 en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20161HS MRF8P20161HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S35120HS Rev. 3, 6/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S35120HSR3 Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.


    Original     		MRF7S35120HS MRF7S35120HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110


    Original     		MRF6P21190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 PDF

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 PDF

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 PDF

    ATC100A101JP150

    Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 PDF

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 PDF

    T491C105K0

    Abstract: No abstract text available
    Text: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF6P21190HR6 MRF6P21190HR6 T491C105K0 PDF

    mosfet J442

    Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136


    Original     		AFT09MS015N AFT09MS015NT1 PDF

    EEEFK1H101P

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6P18190H MRF6P18190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 PDF

    mcr63

    Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 mcr63 T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HSR3 mcr63v477m PDF

    MRF5P21180HR6

    Abstract: MRF5P21180 AN1955 CDR33BX104AKYS
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 3, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF5P21180HR6 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 AN1955 CDR33BX104AKYS PDF