RDD050N20
Abstract: No abstract text available
Text: RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 zDimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain)
|
Original
|
RDD050N20
RDD050N20
|
PDF
|
RDD050N20
Abstract: No abstract text available
Text: RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 zDimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain)
|
Original
|
RDD050N20
RDD050N20
|
PDF
|
RDX030N60
Abstract: No abstract text available
Text: RDX030N60 Transistors 10V Drive Nch MOSFET RDX030N60 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
|
Original
|
RDX030N60
O-220FM
RDX030N60
|
PDF
|
CPC1030N
Abstract: CPC1030NTR CPC1030NTR-1 EIA-481-2
Text: CPC1030N 4 Pin SOP OptoMOS Relay Blocking Voltage Load Current Max RON CPC1030N 350 120 30 Description The CPC1030N is a miniature 1-Form-A solid state relay in a 4 pin SOP package that employs optically coupled MOSFET technology to provide 1500Vrms of input to output isolation. The efficient MOSFET
|
Original
|
CPC1030N
CPC1030N
1500Vrms
DS-CPC1030N-R07
CPC1030NTR
CPC1030NTR-1
EIA-481-2
|
PDF
|
50W car power amplifier tda7850
Abstract: tda7850 FLEXIWATT25 equivalent 4x50W TDA7850H 30W hi-fi audio power amplifier car class d audio 50W amp dim hsd nv
Text: TDA7850 4 x 50W MOSFET Quad bridge power amplifier plus HSD Features • Superior output power capability: 4 x 50W/4Ω Max. 4 x 30W/4Ω @ 14.4V, 1KHz, 10% 4 x 80W/2Ω Max. 4 x 55W/2Ω @ 14.4V, 1KHz, 10% ■ MOSFET Output power stage ■ Excellent 2Ω driving capability
|
Original
|
TDA7850
Flexiwatt25
50W car power amplifier tda7850
tda7850
FLEXIWATT25 equivalent
4x50W
TDA7850H
30W hi-fi audio power amplifier
car class d audio 50W
amp dim hsd nv
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated
|
Original
|
VS-FA40SA50LC
VS-FA38SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Not Available for New Designs, Use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated
|
Original
|
VS-FA40SA50LC
VS-FA38SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA
|
Original
|
VS-FC220SA20
OT-227
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-FC220SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 220 A FEATURES • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche SOA
|
Original
|
VS-FC220SA20
OT-227
E78996
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements
|
Original
|
FA57SA50LCP
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
INTEGRATOR 9435
Abstract: mosfet 62N 4435 mosfet TQFP48 VRD10 CDF-AEC-Q100-002 CS216 L6711 L6711TR K2750
Text: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps
|
Original
|
L6711
TQFP48
150kHz
450kHz
INTEGRATOR 9435
mosfet 62N
4435 mosfet
TQFP48
VRD10
CDF-AEC-Q100-002
CS216
L6711
L6711TR
K2750
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance
|
Original
|
VS-FA40SA50LC
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FA38SA50LCP
OT-227
2002/95/EC
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
B60N06
Abstract: L9380 SO20 charge pump mosfet driver external
Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION
|
Original
|
L9380
L9380
B60N06
SO20
charge pump mosfet driver external
|
PDF
|
|
|
L6711-based
Abstract: CDF-AEC-Q100-002 L6711 L6711TR TQFP48 VRD10 K2750
Text: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET ■ 0.5% Output voltage accuracy ■ 6 bit programmable output from 0.8185V to 1.5810V in 12.5mV steps
|
Original
|
L6711
150kHz
450kHz
L6711-based
CDF-AEC-Q100-002
L6711
L6711TR
TQFP48
VRD10
K2750
|
PDF
|
"SOT-227" dimensions
Abstract: No abstract text available
Text: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FA38SA50LCP
OT-227
2002/95/EC
OT-227
11-Mar-11
"SOT-227" dimensions
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FA38SA50LCP Vishay High Power Products HEXFET Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel RoHS • Low on-resistance COMPLIANT • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227
|
Original
|
FA38SA50LCP
OT-227
OT-227
18-Jul-08
|
PDF
|
60aph
Abstract: VS-FA72SA50LC
Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements
|
Original
|
VS-FA72SA50LC
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
60aph
VS-FA72SA50LC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance
|
Original
|
VS-FA40SA50LC
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
FA38SA50LCP
Abstract: No abstract text available
Text: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance
|
Original
|
FA38SA50LCP
OT-227
2002/95/EC
OT-227
11-Mar-11
FA38SA50LCP
|
PDF
|
B60N06
Abstract: SMB7W01-200
Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION
|
Original
|
L9380
L9380
D98AT391
L9380-TR
B60N06
SMB7W01-200
|
PDF
|
capacitor electrolyte
Abstract: 17520 transistor
Text: Power 1C BIC1222 Bellnix <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such
|
OCR Scan
|
BIC1222
BIC1222
V-20V.
BDD20050412-050704
capacitor electrolyte
17520 transistor
|
PDF
|
17520 transistor
Abstract: ax3217
Text: Power 1C BIC1222 Bellnix' <Summary> BIC1222 is a high efficiency POWER-IC of MCM multi chip module with synchronous rectification system chopper control, N channel MOSFET of main switch and low side MOSFET for synchronous rectification. Maximum output is 5A and the input voltage range is 8V-20V. The functions such
|
OCR Scan
|
BIC1222
BIC1222
V-20V.
DC8-20V
V-12V)
BDD20050412-030514
17520 transistor
ax3217
|
PDF
|
MOSFET Termination Structure
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands
|
OCR Scan
|
STVHD90.
STVHD90
MOSFET Termination Structure
|
PDF
|
