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    MOSFET D90NH02L Search Results

    MOSFET D90NH02L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET D90NH02L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D90NH

    Abstract: d90nh02l STD90NH02L-1 JESD97 STD90NH02L STD90NH02LT4
    Text: STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark


    Original     		STD90NH02L STD90NH02L-1 D90NH d90nh02l STD90NH02L-1 JESD97 STD90NH02L STD90NH02LT4 PDF

    D90NH

    Abstract: d90nh02l D90NH02 d90n JESD97 STD90NH02L STD90NH02L-1 STD90NH02LT4 STD90
    Text: STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark


    Original     		STD90NH02L STD90NH02L-1 D90NH d90nh02l D90NH02 d90n JESD97 STD90NH02L STD90NH02L-1 STD90NH02LT4 STD90 PDF

    d90nh02l

    Abstract: D90NH STD90NH02L STD90NH02L-1 STD90NH02LT4 mosfet D90NH02L diode C2
    Text: STD90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		STD90NH02L O-251) O-252) O-251 O-252 STD90NH02L d90nh02l D90NH STD90NH02L-1 STD90NH02LT4 mosfet D90NH02L diode C2 PDF