evld02
Abstract: IXDD415 DEIC420 SOP-28 thermal DEIC420 RF MOSFET Gate Driver IC IXLD02 SOP28 Package DE-275 EVDD415 SOP28 socket
Text: DE-Series MOSFET, DEIC420 And SOP-28 IC Device Installation & Mounting Instructions The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to
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DEIC420
OP-28
DE-275
IXDD415
IXLD02
evld02
SOP-28 thermal
DEIC420 RF MOSFET Gate Driver IC
SOP28 Package
EVDD415
SOP28 socket
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heat sink design guide, IGBT
Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Text: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs
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O-220,
O-247,
O-264
OT-227
boar15
T0-220,
O-264,
heat sink design guide, IGBT
EVIC420A
RF MOSFETs
evic
TO-264
heat sink to220
ixys to-247
DEIC
DE275
igbt to247
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DE-Series
Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high
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m7 rectifier diode
Abstract: No abstract text available
Text: UN I T R O D E CORP 9347963 UNITRO DE T2 DE~| T3l47clti3 DDlGTSb 92D CORP POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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T3l47c
UFN620
UFN621
UFN622
UFN623
m7 rectifier diode
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Untitled
Abstract: No abstract text available
Text: RF POWER MOSFET Products Product Line of mom D ire cte d Etiergy, inc. An QIXYS Company DE Series The patented DE-SERIES Fast Power MOSFETs are a new class of unique high power transistors designed as a circuit element from the ground up for high speed, high frequency, high power applications at frequencies up to 100 MHz. DEI's Fast Power™ technology
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de102N02A
275-102N06A
275X2-102N06A
375-102N12A
475-102N21A
275x2
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J1025
Abstract: No abstract text available
Text: 7 2 9 4 6 2 1 POWEREX I NC Tfi DE | ? 2 T 4 t i S l DD05771 S I T-39-13 isomerst J1025 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 20 Amperes/50 Volts Description Powerex Single EXMOS™ MOSFET
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DD05771
T-39-13
J1025
Amperes/50
O-220F
J1025
peres/50
J102S
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mospower applications handbook
Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ
Text: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD US201/A/B/C CMOS IC H I GH -SI DE POWER SWI T CH ES WI T H FLAG ̈ DESCRI PT I ON The UTC US201/A/B/C series are 80m high-side power switches. There’s internal single low voltage N-Channel MOSFET which makes it an ideal for all USB applications. This MOSFET
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US201/A/B/C
US201/A/B/C
QW-R502-302
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PCF35N08
Abstract: RFK35N08 RFK35N10
Text: 3875081 G E SOLID STATE -01 DE 1 • 3fl75Dfll GDiaSDa ¡i I T-ZI'OI Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum
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PCF35N08
source-10-mil
Number-09288
PCF35N08-
RFK35N08
RFK35N10
PCF35N08
RFK35N10
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DF378F
Abstract: df103b FT03E I36S PCF35N08 RFK35N08 RFK35N10 ba nuts 0166 415 04 1 060 Hall 01E
Text: 3875081 G E SOLID STATE -01 DE 1• 3fl75Dfll GDiaSDa ¡i I T - Z I'O I Rower MOSFET Chips File Number 1530 PCF35N08 N-Channel Enhancement-Mode Power Field-Effect Transistor Chip 80 V, 35 A, 0.055 O Features: ■ Contact metallization: Gate and source-aluminum
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PCF35N08
source-10-mil
Number-09288
PCF35N08-
RFK35N08
RFK35N10
NR231A
DF103B
DF378F
NRJ31A
DF378F
df103b
FT03E
I36S
PCF35N08
RFK35N10
ba nuts
0166 415 04 1 060
Hall 01E
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Untitled
Abstract: No abstract text available
Text: -8368602 SO LITRO N a I • JL m DE V I C E S INC a bl DE | A B h f l b D E 0 D D 03 2 4 fa u ■ \/ i-jy-io § ;, Inc. S P E C I F I C A T I O N S SDT15 N0: TYPE: MAXIMUM RATINGS C A SE : POWER T 0 "3 MOSFET ^6 0 N-CHANNEL M ILL PINS Vpg Vol tage , Drain to Source
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SDT15
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Untitled
Abstract: No abstract text available
Text: I / I 1 A dvanced L in ea r De v ic e s , Inc . ALD2704A/ALD2704B ALD2704 DUAL RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD2704 is a dual monolithic operational amplifier with MOSFET input that has rail-to-rail input and output voltage ranges. The input
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ALD2704A/ALD2704B
ALD2704
ALD2704
300mV.
4000pF
160Hz
100nF
500pF
32KHz
20dB/decade
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sop-12 package
Abstract: DEIC420
Text: RF MOSFET Gate Drive 1C Pr°?uct Lineof D ire c te d Energy, Inc. A n nfX Y S Company The DEIC 420 ultra-fast high current driver is optimized to drive DEI DE-Series MOSFETs for high efficiency performance in RF generators, laser diode drivers, pulse generators, and high frequency power conversion applications. It is designed to switch power
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415SI
28-pin
DE-275
sop-12 package
DEIC420
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vienna rectifier
Abstract: Zero crossing switching thyristors module three phase bridge rectifier picture S6 9A Diode Smd Cree SiC diode die single phase vienna rectifier rectifier diode 230V AC input and 230V DC output rectifier three phase 40a Cree SiC MOSFET design and of 1- vienna rectifier
Text: Low profile power module combined with state of the art MOSFET switches and SiC diodes allows high frequency and very compact three-phase sinusoidal input rectifiers Serge Bontemps 1 , Alain Calmels(1), Simon D. Round(2), Johann W. Kolar(2) (1) Microsemi PPG power module Products, Chemin de Magret, F-33700 Merignac
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F-33700
CH-8092
APEC2007)
vienna rectifier
Zero crossing switching thyristors module
three phase bridge rectifier picture
S6 9A Diode Smd
Cree SiC diode die
single phase vienna rectifier
rectifier diode 230V AC input and 230V DC output
rectifier three phase 40a
Cree SiC MOSFET
design and of 1- vienna rectifier
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JS0245A1
Abstract: No abstract text available
Text: 72 94 62 1 POWEREX INC DE Í 7 2 T 4 b E l ¿ g M M JE lM fY ' ^ V W ilK A ODGS?^ 7 i~ JS0245A1 JS0250A1 T— 39— 13 Tentative Single EXMOS MOSFET Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 15 Amperes/450-500 Volts Dimension
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JS0245A1
JS0250A1
Amperes/450-500
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD US2175 CMOS IC DU AL U SB H I GH -SI DE POWER SWI T CH DESCRI PT I ON The US2175 is a high-side power switch with two channels. It particularly designed for the Universal Serial Bus USB including self-powered and bus-powered types. The RDS(ON) of the MOSFET
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US2175
US2175
QW-R502-403
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y 6763
Abstract: No abstract text available
Text: TE UNITRODE CORP 9347963 D E | c1347c]b3 DDIOSOÛ 3 | ~ U NI TRO DE CORP 92D 10508 D POWER MOSFET TRANSISTORS , 1TX JTXV 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdow n • Excellent T e m p e ra tu re S tability
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1347c
2N6764
DD1GS11
y 6763
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con tech
Abstract: ay dm gate ng CHANNEL WELL TECH
Text: u TMOS What’s An Enhancement-Mode, Silicon Gate, Power MOSFET? It is a po w e r transisto r that uses M etal O xid e S e m icon ducto r tech nolog y to fabricate a Field Effect Transistor. The de vice is con tro lled by applying a volta ge to the M O S gate to enhance
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Untitled
Abstract: No abstract text available
Text: June 1998 FAIRCHILD M lC O N D U C T O R FDR4420A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features T h e S upe rS O T -8 fam ily of N -C hannel Logic Level M O S F E T s have been de signed to provide a low profile, sm all footprint
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FDR4420A
FDR4420
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bergquist ge
Abstract: transistor dk qq
Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m il W aveFET™ de vice s are an ad van ced series of po w e r M O SFETs w hich utilize M o to ro la ’s
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MMSF3300/D
MMSF3300
bergquist ge
transistor dk qq
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s
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MMSF3300/D
MMSF3300
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marking 2904
Abstract: MDC1000B MDC1000 318E-04
Text: SMALLBLOCK Products MOSFET Turn-Off Devices % 40 T his new series of M O S F E T tu rn -o ff devices offers an econom ical w ay to reduce the turn-o ff tim e of pow er M O SFETs. Additionally, they cla m p the M O S F E T gate voltage to a safe level. T h e use of a M O S F E T turn-off de vice low ers
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O-226AA)
O-236AB)
OT-23
318E-04
O-261
OT-223
O-226AA
DC1000A
MDC1005A
MDC1000
marking 2904
MDC1000B
318E-04
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTD2N40E/D
TD2N40E
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Motorola 2N50
Abstract: 2N50M Motorola t 2N50
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode Silicon G ate TM O S DPAK fo r Su rface M o u n t or Insertion M ount TM O S POWER FET 2 AMPERES rDS on = 4 OH M S
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MTD2N50
Y145M
Y145M.
Motorola 2N50
2N50M
Motorola t 2N50
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