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    DE275 Price and Stock

    IXYS Corporation DE275-501N16A

    Rf Mosfet, N Channel, 500V, De-275; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation:590W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°Crohs Compliant: Yes |Ixys Rf DE275-501N16A
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    IXYS Corporation DE275X2-102N06A

    Mosfet, N Channel, Rf, 16A, 1Kv, 1.18Kw; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:16A; Power Dissipation:1.18Kw; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:8Pins; Channel Type:N Channel Rohs Compliant: Yes |Ixys Rf DE275X2-102N06A
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    Siemens 6SL32230DE275BG1 (ALTERNATE: 6SL32230DE275BG1)

    SINAMICS PM230-IP55-FSB-B-400V 7.5KW ; 6SL32230DE275BG1 | Siemens 6SL32230DE275BG1
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    RS 6SL32230DE275BG1 (ALTERNATE: 6SL32230DE275BG1) Bulk 2 Weeks 1
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    Siemens 6SL32230DE275AG1 (ALTERNATE: 6SL32230DE275AG1)

    SINAMICS PM230-IP55-FSB-A-400V 7.5KW ; 6SL32230DE275AG1 | Siemens 6SL32230DE275AG1
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    RS 6SL32230DE275AG1 (ALTERNATE: 6SL32230DE275AG1) Bulk 2 Weeks 1
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    IXYS Corporation DE275-101N30A

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    Bristol Electronics DE275-101N30A 30
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    DE275 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DE-275 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    DE275 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    DE-275-101N30 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-101N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-101N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-101P12-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-102N05 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-102N05-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-102N05-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-102N06A Directed Energy RF Power MOSFET Original PDF
    DE275-102N06A IXYS TRANS MOSFET N-CH 1000V 8A 6DE 275 Original PDF
    DE-27510IN40 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-27510IP12 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-201N25 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-201N25-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-201N25A IXYS TRANS MOSFET N-CH 200V 25A 6DE 275 Original PDF
    DE-275-201P11-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-27520IP11 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-501N12-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-501N12-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF

    DE275 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-501N16A DE275X2-501N16A PDF

    DE275X2-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in


    Original     		DE275X2-501N16A DE275X2-501N16A PDF

    13.56mhz c class amp

    Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A PDF

    DE275X2-501N16A

    Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
    Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2 PDF

    air variable capacitor

    Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		DE275-102N06A 102N06A air variable capacitor 13.56mhz c class amp DE275-102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF PDF

    102N06A

    Abstract: 400P DE275-102N06A 10-DOF 102N06
    Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE275-102N06A 102N06A 400P DE275-102N06A 10-DOF 102N06 PDF

    DE275-102N06A

    Abstract: DE375-102N10A DE375-501N16A
    Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.


    Original     		DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A PDF

    DE275-102N06A

    Abstract: 900 v 6 amp mosfet 102N06A 400P 10-DOF 102N
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-102N06A 102N06A DE275-102N06A 900 v 6 amp mosfet 400P 10-DOF 102N PDF

    DE275-501N16A

    Abstract: 92-0002 DE275-501N16
    Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE275-501N16A DE275-501N16A 92-0002 DE275-501N16 PDF

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
    Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 400P 10-DOF 275X2-102N06A ssd2 PDF

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200


    Original     		DE275-201N25A 201N25A 1100P DE275-201N25A PDF

    DE275-501N16A

    Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
    Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		DE275-501N16A DE275-501N16A 501N16A gsm Handset Circuit Diagram PIN diode SPICE model PDF

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-201N25A 201N25A 1100P DE275-201N25A PDF

    Directed Energy

    Abstract: DE275-102N06A
    Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		DE275-102N06A Directed Energy DE275-102N06A PDF

    DE275-101N30A

    Abstract: DE-275-101N30 de275 PIN diode SPICE model
    Text: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-101N30A 101N09A 1100P DE275-101N30A DE-275-101N30 de275 PIN diode SPICE model PDF

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
    Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt PDF

    DE-275 101N30

    Abstract: Directed Energy 101N30 DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 101N30 30A, 100V, 0.05Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-275 101N30 250mA 150oC DE-275 101N30 Directed Energy 101N30 PDF

    102N05

    Abstract: DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 102N05 5A, 1000V, 2.6Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-275 102N05 150oC 102N05 PDF

    DEIC420

    Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI DEIC420 application 13.56Mhz class e power amplifier power amplifier mosfet up to 50mhz "RF MOSFETs" DE-275 EVIC420 13.56MHZ mosfet
    Text: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V


    Original     		DEIC420 TheDEIC420 45MHz, DEIC420 DEIC420 RF MOSFET Gate Driver IC IXDD415SI DEIC420 application 13.56Mhz class e power amplifier power amplifier mosfet up to 50mhz "RF MOSFETs" DE-275 EVIC420 13.56MHZ mosfet PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


    Original     		PDF

    vdgr test circuit

    Abstract: MOSFET 2301 oss 200-20 vdr 275 DE-275
    Text: - ^ ' • » n ^ c - r ' T n r n r r n c m c p T î v i m p / . . . Q 7 n f i n n O T r , ÎTliTafl^ ^ s D IR EC TE! ENERGY INC t - i ~ _ » Q0ÜDÜ27 =■ DE-275 SERIES □ DATA ante i DIRECTED ENERGY, IN C -, > ■ ^ DE-275 20IP11


    OCR Scan     		DE-275 20IP11 vdgr test circuit MOSFET 2301 oss 200-20 vdr 275 PDF

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics PDF