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    MOSFET IGSS 100NA VDS 20V Search Results

    MOSFET IGSS 100NA VDS 20V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IGSS 100NA VDS 20V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LND250

    Abstract: LND250K1 n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V
    Text: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		LND250 OT-23: O-236AB* LND250K1 OT-23. LND250 LND250K1 n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V PDF

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode ramp generator depletion MOSFET n mosfet depletion MOSFET N SOT-23 n channel depletion MOSFET power relay N-channel mosfet
    Text: LND250 Preliminary N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		LND250 OT-23: O-236AB* LND250K1 OT-23. MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode ramp generator depletion MOSFET n mosfet depletion MOSFET N SOT-23 n channel depletion MOSFET power relay N-channel mosfet PDF

    LND150N8 equivalent

    Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA LND150N8 equivalent depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET PDF

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    Original     		LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8 PDF

    transistor marking code 12W 12

    Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA transistor marking code 12W 12 LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V PDF

    ln1e

    Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA ln1e depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND PDF

    N-Channel Depletion-Mode MOSFET

    Abstract: MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET
    Text: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    Original     		LND250 OT-23: O-236AB* LND250K1 OT-23. N-Channel Depletion-Mode MOSFET MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET PDF

    VN3205 equivalent

    Abstract: No abstract text available
    Text: DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN3205 data sheet was chosen as an example because it


    Original     		AN-D15 VN3205 VN3205 VN3205 equivalent PDF

    VN3205N6

    Abstract: AN-D15 VN3205 VN3205N3 VN3205N8 VN3205ND supertex mosfet
    Text: DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN3205 data sheet was chosen as an example because it


    Original     		AN-D15 VN3205 VN3205 VN3205N6 AN-D15 VN3205N3 VN3205N8 VN3205ND supertex mosfet PDF

    VN0109N5

    Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
    Text: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an


    Original     		AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0109N5 VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109 PDF

    FS10SM16A

    Abstract: FS10SM-16A
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A •800V ■0.98Q 10A • V d s s . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­


    OCR Scan     		FS10SM-16A FS10SM16A FS10SM-16A PDF

    CO52

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3VS-14A HIGH-SPEED SWITCHING USE FS3VS-14A OUTLINE DRAWING :<1 Dimensions in mm 10.5MAX. - 4-5 -w \ .1.3 « ""~1 S= T 0 Ì9 ^ r uM -4 r 0. f . A i ! ii 1 T / . 700V


    OCR Scan     		FS3VS-14A O-220S CO52 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A • VOSS . 800V • TDS ON (MAX) . 2 .3 ÎÎ • I D . 5A


    OCR Scan     		FS5UM-16A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING Dimensions in mm 10.5MAX. 4.5 \ 1.3 \ zWr'-iíí" JE S », ; m -¡r~ 0.5 . 0.8 c m 2, A • oJ J GATE 2 DRAIN .3. SOURCE DRAIN • V d S S . 5 0 0 V


    OCR Scan     		FS3VS-10 O-220S 571CH23 PDF

    TTC 103

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-9 HIGH-SPEED SWITCHING USE FS14SM-9 • Voss . 450V • rDS ON (MAX) .0.52Í2 • ID . 14A


    OCR Scan     		FS14SM-9 TTC 103 PDF

    090Q

    Abstract: FS10KM10 MOSFET IGSS 100nA VDS 20V
    Text: MITSUBISHI Nch POWER MOSFET FS10KM-10 I ; HIGH-SPEED SWITCHING USE FS10KM-10 • VDSS . •5 0 0 V • TDS ON (MAX) 0.90Q • Id . 10A • V iso . 2 000V APPLICATION SMPS, DC-DC Converter, battery charger, power


    OCR Scan     		FS10KM-10 FS10KM-10 571CH23 090Q FS10KM10 MOSFET IGSS 100nA VDS 20V PDF

    z16f

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20VS-5 HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­ sonal computer etc. MAXIMUM RATINGS To . 25’C Symbol VDSS V gss Id Id m Po Tch Tstg


    OCR Scan     		FS20VS-5 z16f PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS7UM-14A HIGH-SPEED SWITCHING USE 1 FS7UM-14A • V dss . 700V • rDS ON (MAX) . 1.82Q • I D . 7 A


    OCR Scan     		FS7UM-14A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS14VS-10 HIGH-SPEED SWITCHING USE FS14VS-10 ♦* •500V ■0.64Q 14A • V d s s . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­


    OCR Scan     		FS14VS-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS16SM-5 HIGH-SPEED SWITCHING USE FS16SM-5 OUTLINE DRAWING Dimensions in mm 4.5 . 15.9MAX. 1.5 TI 5.45 0.6 GATE DRAIN SOURCE DRAIN • V d s s . 250V • rDS ON (MAX) .0 .2 5 Q


    OCR Scan     		FS16SM-5 571CH23 5710e PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET I j FS2UM-14A ! HIGH-SPEED SWITCHING USE FS2UM-14A • VDSS . -700V • rDS ON (MAX) . 9.75Í2 • I D . 2A


    OCR Scan     		FS2UM-14A -700V PDF

    50L2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING • V d s s .2 5 0 V • rDS ON (MAX) .0.31 Q


    OCR Scan     		FK16KM-5 150ns O-220FN 50L2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10KM-6 HIGH-SPEED SWITCHING USE FS10KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0 3 2,8 t 0.2 w •ig ¿ • V d s s . 300V GATE DRAIN SOURCE • rDS ON (MAX) .0.680


    OCR Scan     		FS10KM-6 O-220FN 5710c PDF

    gs 7103

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS16VS-5 HIGH-SPEED SWITCHING USE FS16VS-5 OUTLINE DRAWING Dimensions in mm T a y: % 3/ Q2y ö ÍQ oi A2 £ X GATE DRAfN SOURCE DRAIN • V dss . 250V • rDS ON) (MAX)


    OCR Scan     		FS16VS-5 O-220S gs 7103 PDF