Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LN1E Search Results

    SF Impression Pixel

    LN1E Price and Stock

    Siemens LN1E100

    BRKR ED 2/3P 30-100A AL BODY LUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LN1E100 Box 1
    • 1 $12.33
    • 10 $12.33
    • 100 $12.33
    • 1000 $12.33
    • 10000 $12.33
    Buy Now
    Mouser Electronics LN1E100
    • 1 $10.92
    • 10 $10.45
    • 100 $9.3
    • 1000 $8.64
    • 10000 $8.64
    Get Quote
    RS LN1E100 Bulk 1 5 Weeks 1
    • 1 $12.82
    • 10 $11.54
    • 100 $10.26
    • 1000 $10.26
    • 10000 $10.26
    Buy Now
    Onlinecomponents.com LN1E100
    • 1 -
    • 10 $9.06
    • 100 $7.66
    • 1000 $6.96
    • 10000 $6.96
    Buy Now

    Dremel PLN-1EOL

    Plena End-Of-Line Board (6 Boards In Pack) |Dremel PLN-1EOL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PLN-1EOL Bulk 1
    • 1 $380.02
    • 10 $352.88
    • 100 $313.2
    • 1000 $313.2
    • 10000 $313.2
    Buy Now

    Siemens LN1-E100

    WIRE GRIP KIT, MOLDED CASE CIRCUIT BREAKER ACCESSORY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components LN1-E100 25
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    LN1E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code 12W 12

    Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original
    PDF LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA transistor marking code 12W 12 LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V

    ln1e

    Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original
    PDF LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA ln1e depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND

    transistor marking code 12W SOT-23

    Abstract: No abstract text available
    Text: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original
    PDF LND150 LND150 DSFP-LND150 C041114 transistor marking code 12W SOT-23

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original
    PDF LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150

    Untitled

    Abstract: No abstract text available
    Text: Intel Xeon® Processor E5 Product Family Datasheet- Volume Two May 2012 Reference Number: 326509-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS


    Original
    PDF

    CHN 749 datasheet

    Abstract: No abstract text available
    Text: Intel Core i7 Processor Family for LGA2011 Socket Datasheet – Volume 2 of 2 Supporting Desktop Intel® Core™ i7-4960X Extreme Edition Processor Series for the LGA2011 Socket Supporting Desktop Intel® Core™ i7-49xx and i7-48xx Processor Series for the LGA2011 Socket


    Original
    PDF LGA2011 i7-4960X i7-49xx i7-48xx CHN 749 datasheet

    UniPHY

    Abstract: vm 30 cpu Sandy Bridge xeon e5-2400 intel xeon e5-2400 PBAR23SZ Xeon e5 2600 v2 4H11 intel Sandy Bridge intel I5-750
    Text: Intel Xeon® Processor E51600/2400/2600/4600 E5-Product Family Product Families Datasheet- Volume Two May 2012 Reference Number: 326509-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS


    Original
    PDF E51600/2400/2600/4600 E5-1600/2400/2600/4600 UniPHY vm 30 cpu Sandy Bridge xeon e5-2400 intel xeon e5-2400 PBAR23SZ Xeon e5 2600 v2 4H11 intel Sandy Bridge intel I5-750

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original
    PDF LND150 LND150 DSFP-LND150 B021110 40822

    LN1E

    Abstract: Marking code mps
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original
    PDF LND150 DSFP-LND150 A0912908 LN1E Marking code mps

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original
    PDF LND150 LND150 DSFP-LND150 A051909 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23

    intel 8288

    Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
    Text: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or


    Original
    PDF w-9707 116th SA/C-258n81 /45K/RRD intel 8288 intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200

    transistor marking code 12W SOT-23

    Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS


    Original
    PDF LND150 LND150 DSFP-LND150 B021110 transistor marking code 12W SOT-23 marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23

    transistor marking code 12W SOT-23

    Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original
    PDF LND150 DSFP-LND150 A012809 transistor marking code 12W SOT-23 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23

    LN1E

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original
    PDF LND150 DSFP-LND150 A10310808 LN1E

    mosfet K 2865

    Abstract: BF1107 ic sc 6200 passive loopthrough
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


    OCR Scan
    PDF BF1107 115102/00/01/pp8 mosfet K 2865 BF1107 ic sc 6200 passive loopthrough

    gi 9644 diode

    Abstract: INTELDX4 write-through
    Text: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit


    OCR Scan
    PDF 100-MHz 32-Bit 16K-Byte Intel486â 168-oller gi 9644 diode INTELDX4 write-through

    dual-gate

    Abstract: No abstract text available
    Text: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification


    OCR Scan
    PDF

    A8044

    Abstract: No abstract text available
    Text: IN TE G R A TE D CIRCUITS EM TA S&flEET TDA8044; TDA8044A Satellite demodulator and decoder O bjective specification File under Integrated C ircuits, IC02 Philips Semiconductors 1998 A pr 07 PHILIPS PHILIPS Philips S e m ico nd uctors Objective specification


    OCR Scan
    PDF TDA8044; TDA8044A 545104/1200/01/pp16 A8044

    diode AR S1 99

    Abstract: diode AR s1 56
    Text: DISC RETE S E M IC O N D U C TO R S InlEET PHN405 4 N-channel 60 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS


    OCR Scan
    PDF PHN405 OT338-1 SSOP16) 135108/00/03/pp12 diode AR S1 99 diode AR s1 56

    AR1310

    Abstract: D702M LN1E
    Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BGD702MI CATV amplifier module 1998 Mar 13 Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC16 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification


    OCR Scan
    PDF BGD702MI OT115J BGD702. 125106/00/03/pp12 AR1310 D702M LN1E

    ic tda7057aq

    Abstract: No abstract text available
    Text: IN T E G R A T E D CIRCUITS [nlEET TDA7057AQ 2 x 8 W stereo BTL audio output amplifier with DC volume control Product specification Supersedes data of 1997 July 15 File under Integrated Circuits, IC01 Philips Sem iconductors 1998 Apr 07 PHILIPS PHILIPS Philips S e m ico nd uctors


    OCR Scan
    PDF TDA7057AQ 545102/1200/04/pp16 ic tda7057aq

    lm 9805

    Abstract: LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733
    Text: DISC RETE S E M IC O N D U C TO R S A SlnlEET BLV2047 UHF power transistor 1998 Mar 10 Product specification Supersedes data of 1998 Jan 28 File under Discrete Semiconductors, SC08b Philips Semiconductors PHILIPS PHILIPS Phi l i ps S e m i c o n d u c t o r s


    OCR Scan
    PDF BLV2047 SC08b OT468A 125108/00/04/pp12 lm 9805 LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733

    LN1EE

    Abstract: MIC58P01BWM
    Text: MIC58P01 L 8-Bit Parallel-Input Protected Latched Driver General Description Features The MIC58P01 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor


    OCR Scan
    PDF MIC58P01 500mA) MIC5801, MIC58P01 3g31h 1725-1C-12D LN1EE MIC58P01BWM

    MC68121

    Abstract: MC68120 mc6809 MC2708 68120/M
    Text: MC68120 MC68121 MOTOROLA A d v a n c e In fo rm a tio n HMOS {H IG H -D E N S 1 T Y N -C H A N N E L IN TE L LIG E N T PER IPH ER A L CON TR OLLER The M C 68120/M C 68121 Inte llig e n t Peripheral C o n tro lle r MPC I is a general purpose , m ask p rogram m ab le peripheral c o n tro lle r. The IPC


    OCR Scan
    PDF MC68120 MC68121 68120/M M68000 MC68121 mc6809 MC2708