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    MOSFET IGSS 100UA Search Results

    MOSFET IGSS 100UA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IGSS 100UA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and


    Original     		PDF IRF3546 IRF3546

    Untitled

    Abstract: No abstract text available
    Text: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and


    Original     		PDF IRF3546 IRF3546

    Mosfet

    Abstract: SSF22A5E
    Text: SSF22A5E 20V N-Channel MOSFET Main Product Characteristics: VDSS 20V RDS on 3Ω ID 238mA Pin Assignment Schematic Diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product


    Original     		PDF SSF22A5E 238mA SC-89) Mosfet SSF22A5E

    marking KN

    Abstract: n-channel enhancement mosfet
    Text: SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment.


    Original     		PDF SCG3019 OT-523 50BSC 04-May-2010 marking KN n-channel enhancement mosfet

    S2N7002KT

    Abstract: n-channel enhancement mosfet S2N7002
    Text: S2N7002KT N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES   Low Gate Charge for Fast Switching. ESD Protected Gate. APPLICATIONS   Power Management Load Switch


    Original     		PDF S2N7002KT OT-523 50BSC 154mA 09-Apr-2010 S2N7002KT n-channel enhancement mosfet S2N7002

    3018G

    Abstract: UK3018G Device Marking 313
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low


    Original     		PDF UK3018 UK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G UK3018G Device Marking 313

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018BW Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET  DESCRIPTION The UTC UK3018BW is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for


    Original     		PDF UK3018BW UK3018BW 400mA UK3018BWG-AL5-R OT-353 UK3018BWG-AL5t QW-R209-031.

    EM6M2

    Abstract: diode marking U22
    Text: TYPE PRODUCTS EMT6 PAGE EM6M2 1.TYPE EM6M2 2.STRUCTURE SILICON N-CHANNEL / P-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/5 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 Tr1 : Nch 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ 20V GATE-SOURCE VOLTAGE VGSS ・・・ ±8V


    Original     		PDF 200mA 400mA PW10s 150mW 120mW 55IRCUITNch TSQ03103H-EM6M2 EM6M2 diode marking U22

    uk3019

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION 3 The UTC UK3019 is a silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3019 UK3019 OT-23-3 O-236) 400mA UK3019G-AE2-R QW-R502-311

    "MOSFET Module"

    Abstract: "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module
    Text: QJD0232001 320 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Power MOSFET Module 320 Amperes 250 Volts Error! Not a valid link. Description: Powerex Dual MOSFET Half Bridge Modules with Avalanche Body Diodes


    Original     		PDF QJD0232001 "MOSFET Module" "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module

    3PD200

    Abstract: 2SK3019 UK3019 UK3019L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION The UTC 2SK3019 is a Silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3019 2SK3019 OT-23 400mA UK3019L UK3019G UK3019-AE3-R QW-R502-311 3PD200 UK3019 UK3019L-AE3-R

    2.5V "Power MOSFET"

    Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3018 OT-23 2SK3018 OT-323 400mA UK3018L UK3018G UK3018-AE3-R UK3018-ALt QW-R502-313 2.5V "Power MOSFET" MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 SOT-23

    2SK3018

    Abstract: 3018G 2SK3018 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


    Original     		PDF UK3018 2SK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G 2SK3018 UTC

    SCG3019

    Abstract: MosFET
    Text: SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 A FEATURES      M Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment.


    Original     		PDF SCG3019 OT-523 18-Dec-2013 SCG3019 MosFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF730-E Power MOSFET 5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF730-E O-220 UF730L-TA3-T UF730G-TA3-T QW-R502-A06

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: MOSFET IGSS 100uA mosfet vgs 5v PM-0109
    Text: N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE NO. : PM-0109 1. Scope : 1-1. This specification applies to N channel silicon MOSFET chips, Device No. PM-0109 1-2. Built-in g-s protection diode 2. Structure : 2-1. Planar type . 2-2. Electrodes . Source : Aluminum alloy .


    Original     		PDF PM-0109 038mm) 326mm 100uA 500mA 200mA 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET IGSS 100uA mosfet vgs 5v PM-0109

    SUM6K1N

    Abstract: MosFET
    Text: SUM6K1N 0.1A , 30V , RDS ON 8  N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-363 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to


    Original     		PDF OT-363 24-Sep-2013 SUM6K1N MosFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N70-M Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N70-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 7N70-M 7N70-M QW-R209-064

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: mosfet vgs 5v n channel silicon mosfet MOSFET IGSS 100uA n channel mosfet vds max 400v, id max 500mA diode gate PM-0112
    Text: N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE NO. : PM-0112 1. Scope : 1-1. This specification applies to N channel silicon MOSFET chips, Device No. PM-0112 1-2. Built-in g-s protection diode 2. Structure : 2-1. Planar type . 2-2. Electrodes . Source : Aluminum alloy .


    Original     		PDF PM-0112 038mm) 550mm 210mm 100uA 500mA 200mA 5V GATE TO SOURCE VOLTAGE MOSFET mosfet vgs 5v n channel silicon mosfet MOSFET IGSS 100uA n channel mosfet vds max 400v, id max 500mA diode gate PM-0112

    "MOSFET Module"

    Abstract: mosfet 400a 200 ampere MOSFET datasheet QJD0180001 "Battery Chargers" 7272 mosfet 800 v power mosfet module 400A mosfet
    Text: QJD0180001 800 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Power MOSFET Module 800 Amperes 100 Volts Error! Not a valid link. Description: Powerex Dual MOS Half Bridge Modules with Avalanche Body Diodes feature low


    Original     		PDF QJD0180001 "MOSFET Module" mosfet 400a 200 ampere MOSFET datasheet QJD0180001 "Battery Chargers" 7272 mosfet 800 v power mosfet module 400A mosfet

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged


    Original     		PDF 4N70-C 4N70-C 4N70L-TFat QW-R502-A89

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 4N60-R 4N60-R O-220F1 QW-R502-A64

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 7NM70 7NM70 QW-R205-047

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: PM-0107 mosfet vgs 5v
    Text: N-CHANNEL ENHANCEMENT MOSFET CHIPS DEVICE NO. : PM-0107 1. Scope : 1-1. This specification applies to N channel silicon MOSFET chips, Device No. PM-0107 1-2. Built-in g-s protection diode 2. Structure : 2-1. Planar type . 2-2. Electrodes . Source : Aluminum alloy .


    Original     		PDF PM-0107 038mm) 326mm 10meter 100uA 150mA 200mA 5V GATE TO SOURCE VOLTAGE MOSFET PM-0107 mosfet vgs 5v