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    MOSFET IRF230 Search Results

    MOSFET IRF230 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SHD230303

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD230303 TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD230303 IRF230 250mA SHD230303 030Typ LCC-28T

    SHD230303

    Abstract: IRF230
    Text: SENSITRON SEMICONDUCTOR SHD230303 TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD230303 IRF230 80asheet SHD230303 IRF230

    Untitled

    Abstract: No abstract text available
    Text: IRF230 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF IRF230

    Untitled

    Abstract: No abstract text available
    Text: IRF230R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF230R

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    IRF150 MOSFET AMP circuit

    Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
    Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given


    Original     		PDF IRF150 IRF150 MOSFET AMP circuit forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		PDF 220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF

    IRF230

    Abstract: No abstract text available
    Text: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


    Original     		PDF IRF230 204AA) 00A/ms IRF230

    IRF230

    Abstract: No abstract text available
    Text: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


    Original     		PDF IRF230 204AA) IRF230" IRF230 IRF230-JQR-B IRF230SMD IRF230SMD-JQR-B IRF230X O276AB)

    irf230

    Abstract: IRF2301 irf232
    Text: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF230, IRF231, IRF232, IRF233 TA17412. irf230 IRF2301 irf232

    IRF232

    Abstract: IRF230 IRF231 IRF233 TB334
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF230, IRF231, IRF232, IRF233 IRF232 IRF230 IRF231 IRF233 TB334

    IRF230

    Abstract: JANTX2N6758 JANTXV2N6758
    Text: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International


    Original     		PDF 90334F IRF230 JANTX2N6758 JANTXV2N6758 O-204AA/AE) MIL-PRF-19500/542] paralleli252-7105 IRF230 JANTX2N6758 JANTXV2N6758

    Untitled

    Abstract: No abstract text available
    Text: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758  HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A  The HEXFET technology is the key to International


    Original     		PDF 90334F IRF230 JANTX2N6758 JANTXV2N6758 O-204AA/AE) MIL-PRF-19500/542]

    IRF230

    Abstract: SFF230
    Text: SsDI PRELIMINARY SFF230 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 9 AMP 200 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • • • • • • •


    OCR Scan     		PDF 670-SSDI IRF230 SFF230

    MOSFET IRF230

    Abstract: IRF230 SFF230-28
    Text: S I — PRELIMINARY SFF230-28 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 9 AMP 200 VOLTS 0.40&2 N-CHANNEL POWER MOSFET Designer’s Data Sheèt FEATURES: • • • • •


    OCR Scan     		PDF 670-SSDI SFF230-28 IRF230 MOSFET IRF230 SFF230-28

    92 0151

    Abstract: MTM15N20
    Text: MOTOROLA SC XSTRS/R F bflE D • b3b?254 DDIfimD OfiT ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA IRF230 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate Y T h is T M O S P o w e r FET is d e s ig n e d f o r lo w


    OCR Scan     		PDF O-204 97A-01 97A-03 92 0151 MTM15N20

    IRF231

    Abstract: irf233 irf230 irf232
    Text: IRF230, IRF231, IRF232, IRF233 HARRIS S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF230, IRF231, IRF232, IRF233 TA17412. RF232, IRF231 irf233 irf230 irf232

    ZO 150

    Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101
    Text: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S | ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode


    OCR Scan     		PDF IRF230, IRF231, IRF232, IRF233 50V-200V IRF232 IRF233 IF230 ZO 150 dg1u IRF230 1RF232 IRF231 IRF23 ic l00a S101

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA IRF230 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate T M O S This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF230

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50