MOSFET IRF635 Search Results

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

IRFB36

Abstract: 1RF634
Contextual Info: _ • 4305271 DDSMDea b 47 ■ HAS lì H A R R IS IRF634, IRF635 IRF636, IRF637 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 2 0 A B • 8.1A and 6.5A, 250V - 275V TOP VIEW • i'DS(°n = 0 .4 5 0 and 0 .6 8 fi DRAIN

IRF635

Abstract: IRF637 IRF636 IRF634 F634 fs34 diode IFIF634 IFIF636 IFIF637 irf634 mosfet
Contextual Info: _ Rugged Power MOSFETs F ile N u m b e r IRF634, IRF635, IRF636, IRF637 2168 Avalanche Energy Rated N-Channel Power MOSFETs N -C HANNEL EN HANCEM ENT MODE 8.1 A, and 6.5A, 275, 250V Tds on = 0.45Q, 0.68Q Features: • Single pulse avalanche energy rated

diode c248

Abstract: irf6348 DIODE C249 IRF635 jh32 C248 diode irf634 9476A MOSFET IRF635
Contextual Info: h e D I • 4flss4sa oGoaina ? I ■ Data Sheet No. PD-9.476A INTERNATIONAL R E C T I F I E R T-39-11 INTERNATIONAL RECTIFIER IX R HEXFET TRANSISTORS IRF634 IRF635 N -C H A N N E L Features 250 Volt, 0.45 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

IL311ANM

Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
Contextual Info: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.

Contextual Info: SAMSUNG ELECTRO NICS IN C b?E D • 7 S b m i42 G0 1 7 2 Ô3 I b b ■ N-CHANNEL POWER MOSFETS IRF634/635 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance