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    IRF634 Price and Stock

    Vishay Siliconix IRF634PBF

    MOSFET N-CH 250V 8.1A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634PBF Tube 6,306 1
    • 1 $1.62
    • 10 $1.62
    • 100 $1.62
    • 1000 $0.70588
    • 10000 $0.70588
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    Vishay Siliconix IRF634

    MOSFET N-CH 250V 8.1A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634 Tube 1,000
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    • 1000 $1.8125
    • 10000 $1.8125
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    Bristol Electronics IRF634 1,000
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    Quest Components IRF634 800
    • 1 $4.5
    • 10 $4.5
    • 100 $2.775
    • 1000 $2.475
    • 10000 $2.475
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    Vishay Siliconix IRF634S

    MOSFET N-CH 250V 8.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634S Tube 1,000
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    Vishay Siliconix IRF634L

    MOSFET N-CH 250V 8.1A I2PAK
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    DigiKey IRF634L Tube
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    Vishay Siliconix IRF634SPBF

    MOSFET N-CH 250V 8.1A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF634SPBF Tube 1,000
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    • 1000 $0.82293
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    Find more IRF634 price and stock on Findchips.com

    IRF634 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF634 STMicroelectronics N-CHANNEL 250V 0.38 ? 8A TO-220-TO-220FP MESH O Original PDF
    IRF634 STMicroelectronics N-CHANNEL 250V 0.38 ? 8A TO-220-TO-220FP MESH OVERLAY MOSFET Original PDF
    IRF634 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8A TO-220 Original PDF
    IRF634 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF634 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 8.1A TO-220AB Original PDF
    IRF634 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF634 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF634 International Rectifier Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) Scan PDF
    IRF634 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF634 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF634 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF634 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF634 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF634 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF634 Unknown FET Data Book Scan PDF
    IRF634A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRF634A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF634A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF634B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRF634B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF

    IRF634 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF634

    Abstract: IRF634FP
    Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3


    Original     		PDF IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP

    Untitled

    Abstract: No abstract text available
    Text: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω


    Original     		PDF IRF634N IRF634NS IRF634NL O-220 08-Mar-07

    IRF1010

    Abstract: IRF634N IRF634NL IRF634NS 1403X
    Text: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET


    Original     		PDF IRF634NPbF IRF634NSPbF IRF634NLPbF O-220 12-Mar-07 IRF1010 IRF634N IRF634NL IRF634NS 1403X

    IRF634N

    Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3
    Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology


    Original     		PDF IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 IRF634N IRF634NL IRF634NS SiHF634N-E3 SiHF634NS-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irf634

    Abstract: st 393 IRF634FP JESD97 IRF63 irf6
    Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 3 2


    Original     		PDF IRF634 IRF634FP O-220 /TO-220FP O-220 O-220FP irf634 st 393 IRF634FP JESD97 IRF63 irf6

    IRF634

    Abstract: SiHF634 SiHF634-E3
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF634 SiHF634-E3

    4538

    Abstract: AN609 IRF634 SiHF634
    Text: IRF634_RC, SiHF634_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634 SiHF634 AN609, 12-Mar-10 4538 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,


    Original     		PDF IRF634B

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 18-Jul-08

    AN609

    Abstract: IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634S SiHF634S AN609, 6863m 8651m 0259m 9396m 3890m 1419m 6299m AN609

    Untitled

    Abstract: No abstract text available
    Text: PD - 94975 IRF634PbF • Lead-Free www.irf.com 1 02/03/04 IRF634PbF 2 www.irf.com IRF634PbF www.irf.com 3 IRF634PbF 4 www.irf.com IRF634PbF www.irf.com 5 IRF634PbF 6 www.irf.com IRF634PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRF634PbF O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    IRF634

    Abstract: IRF634FP IRF-634
    Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3


    Original     		PDF IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP P011C IRF634 IRF634FP IRF-634

    4538

    Abstract: AN609 IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634S SiHF634S AN609, 12-Mar-10 4538 AN609

    SiHF634S

    Abstract: smd e3a IRF634S SiHF634S-E3 SMD-220 SMD DIODE marking AB
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF634S, SiHF634S SMD-220 SMD-220 18-Jul-08 smd e3a IRF634S SiHF634S-E3 SMD DIODE marking AB

    IRF634S

    Abstract: No abstract text available
    Text: IRF634S A d v a n c e d Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology 250 V 0.45Î1 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 8.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S IRF634S

    IRF634A

    Abstract: No abstract text available
    Text: IRF634A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H BVDss = 2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ Vos = 250V


    OCR Scan     		PDF IRF634A IRF634A

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF634 FEATURES • • • • • • • T O -2 2 0 Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRF634 b414E

    Untitled

    Abstract: No abstract text available
    Text: IRF634A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 4 5 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan     		PDF IRF634A QQ3b32fl O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF634S A d van ced Power MOSFET FEATURES - 250 V ♦ Rugged Gate Oxide Technology ^ D S o n = 0.45Q ♦ Lower Input Capacitance lD = 8.1 A B ^D S S ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S

    Untitled

    Abstract: No abstract text available
    Text: IRF634S A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 0 .4 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 8 .1 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF634S

    F634

    Abstract: irf635 IRF634d IRF637
    Text: IRF634, IRF635 IRF636, IRF637 23 H A R R I S N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -22 0 A B • 8.1A and 6.5A, 250V - 275V T O P VIEW • rps on = 0.45ft and 0.68H • Single Pulse Avalanche Energy Rated • S O A is Power-Dissipatlon Limited


    OCR Scan     		PDF IRF634, IRF635 IRF636, IRF637 275/250V IRF635, F634 IRF634d IRF637