Untitled
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET
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MRF9045MR1
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motorola sps transistor
Abstract: MRF21010
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet
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MRF21010
RDMRF21010NCDMA
motorola sps transistor
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HIP4080 amplifier circuit diagram class D
Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
HIP4080 amplifier circuit diagram class D
class d amplifier schematic hip4080
jfet normally off to220
mosfet L 3055
HIP4080
ITL5-1
dual jfet transistor array
AN9404
oscilloscope schematic EAS 200
Switching Power supply with HIP4080A
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class d amplifier schematic hip4080
Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
class d amplifier schematic hip4080
HIP4080 amplifier circuit diagram class D
AN9404
AN9539
mosfet L 3055
1350P
AN9405
0-60V
MO-169AB
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Inverter IRF1404
Abstract: IRF1404 FET IRF1404 static characteristics of mosfet amp mosfet schematic circuit MOSFET dynamic parameters 3 phase mosfet drive schematic AN1040 bach AN-1040
Text: Application Note AN-1040 System Simulation Using Power MOSFET QuasiDynamic Model Table of Contents Page Objective: To examine the Quasi-Dynamic model of power MOSFET and its effects on device thermal response . 1
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AN-1040
Assure2000
Inverter IRF1404
IRF1404 FET
IRF1404
static characteristics of mosfet
amp mosfet schematic circuit
MOSFET dynamic parameters
3 phase mosfet drive schematic
AN1040
bach
AN-1040
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class d amplifier schematic hip4080
Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an
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AN9539
HIP2060,
HIP2060
1-800-4-HARRIS
class d amplifier schematic hip4080
hip4080 h-bridge gate drive schematics circuit
HIP4080 amplifier circuit diagram class D
oscilloscope schematic EAS 200
lem la 50p
mosfet p 3055
RM1S
mosfet L 3055
high power fet audio amplifier schematic
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G60N
Abstract: Thermistor pspice mosfet mark code G4 ic 8870 ORCAD PSPICE BOOK AN1256 IRFZ34 MBR340 TC1410N 100n00
Text: AN1256 Microchip’s Power MOSFET Driver Simulation Models Author: Cliff Ellison Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The simulation models for Microchip’s power MOSFET drivers aid in the design and analysis of various circuits
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AN1256
TC1410N
DS01256A-page
G60N
Thermistor pspice
mosfet mark code G4
ic 8870
ORCAD PSPICE BOOK
AN1256
IRFZ34
MBR340
100n00
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IR3551
Abstract: IR3550 DIODE SMD 44w 3551M GPU board diagram 210nH Waveform Clipping With Schottky "synchronous diode" SMD 1206 R1-10k MOSFET current sense amplifier
Text: 50A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.5% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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3551M
DIODE SMD 44w
3551M
GPU board diagram
210nH
Waveform Clipping With Schottky
"synchronous diode"
SMD 1206 R1-10k
MOSFET current sense amplifier
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IR3550
Abstract: No abstract text available
Text: 60A Integrated PowIRstage FEATURES IR3550 DESCRIPTION • Peak efficiency up to 95% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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DIODE SMD 44w
Abstract: No abstract text available
Text: 50A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.5% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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3551M
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MOSFET current sense amplifier
Abstract: IR3550
Text: 50A Integrated PowIRstage FEATURES IR3551 DESCRIPTION • Peak efficiency up to 94.5% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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3551M
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mosfet SMD 6 PIN IC FOR PWM
Abstract: 210nH IR3553MTRPBF ir3550 IR3553
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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IR3553
3553M
mosfet SMD 6 PIN IC FOR PWM
210nH
IR3553MTRPBF
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Untitled
Abstract: No abstract text available
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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IR3550M
Abstract: IR3550 IR3550MTRPBF IR3550M#PBF IR3551
Text: 60A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 95% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to 3.3V
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3550M
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3558M
Abstract: No abstract text available
Text: 45A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 94.0% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range of 4.5V to 15V Separate LVCC and HVCC from 4.5V to 13.2V to
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3558M
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Untitled
Abstract: No abstract text available
Text: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode Input voltage VIN operating range up to 15V Output voltage range from 0.25V up to (VCC - 2.5V)
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Dell Latitude csx
Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan eLED ORCAD PSPICE BOOK FDP038AN06A0 FDP038AN08A0 AN-7510
Text: Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This
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ir3575
Abstract: No abstract text available
Text: IR3575 60A Exposed Top Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 95% at 1.2V • Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode • Input voltage VIN operating range up to 15V • Output voltage range from 0.25V to Vcc-2.5V, or to
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Spice Model for TMOS Power MOSFETs
Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
Text: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in
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SiF912EDZ
Abstract: s2mc
Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated
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SiF912EDZ-T1--E3
S-50131--Rev.
24-Jan-05
s2mc
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S-50131-Rev
Abstract: 50131 SiF912EDZ
Text: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated
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08-Apr-05
S-50131-Rev
50131
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Untitled
Abstract: No abstract text available
Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9Q28SP1
OM9030SP1
300/jsec,
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Untitled
Abstract: No abstract text available
Text: April 1998 F/\IRCHII_ID M ICDNDUCTO R ^ FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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FDS4410
FDS4410
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F7406
Abstract: No abstract text available
Text: PD - 9.1247C International IG R Rectifier IR F7406 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching V dss = -30V
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1247C
F7406
0D2flfl77
F7406
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