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    MOSFET N CHANNEL 200V 2A Search Results

    MOSFET N CHANNEL 200V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET N CHANNEL 200V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF620

    Abstract: TA9600 TB334 transistor irf620
    Text: IRF620 Data Sheet January 2002 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 5.0A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF620 TA9600. IRF620 TA9600 TB334 transistor irf620

    IRFF220

    Abstract: TA9600 TB334
    Text: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF220 IRFF220 TA9600 TB334

    IRF620 application

    Abstract: TA9600 IRF620 TB334 transistor irf620
    Text: IRF620 Data Sheet June 1999 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 5.0A, 200V Formerly developmental type TA9600. Ordering Information PACKAGE 1577.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF620 TA9600. IRF620 application TA9600 IRF620 TB334 transistor irf620

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		PDF JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR

    AN7254

    Abstract: AN7260 RFP2N20
    Text: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFP2N20 TA09289. O-220AB AN7254 AN7260 RFP2N20

    2N6790

    Abstract: TB334
    Text: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching


    Original     		PDF 2N6790 2N6790 O-205AF TB334

    AN7254

    Abstract: AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L AN7254 AN7260 TB334

    Logic Level N-Channel Power MOSFET

    Abstract: AN7254 AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L Logic Level N-Channel Power MOSFET AN7254 AN7260 TB334

    1E14

    Abstract: 2E12 FRL230R4 JANSR2N7275
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7275 FRL230R4 1000K 1E14 2E12 FRL230R4 JANSR2N7275

    FRL230

    Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7275 FRL230R4 1000K FRL230 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230

    AN7254

    Abstract: AN7260 RFP2N20
    Text: RFP2N20 Data Sheet July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFP2N20 TA09289. O-220AB O-220AB AN7254 AN7260 RFP2N20

    Untitled

    Abstract: No abstract text available
    Text: IRFF210 Data Sheet Title FF 0 bt 2A, 0V, 00 m, March 1999 2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF210 IRFF210 O-205AF TB334

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7275 FRL230R4 1000K

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 FSL230R4

    Untitled

    Abstract: No abstract text available
    Text: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF220

    IRFF220

    Abstract: TA9600 TB334
    Text: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		PDF IRFF220 TB334 TA9600. IRFF220 TA9600 TB334

    2N6790

    Abstract: TB334
    Text: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


    Original     		PDF 2N6790 O-205AF 2N6790 TB334

    relay 12v 100A

    Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7396 FSL230R4 relay 12v 100A 1E14 2E12 FSL230R4 JANSR2N7396

    FDD18N20LZ

    Abstract: Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
    Text: UniFET FDD18N20LZ TM N-Channel MOSFET 200V Logic, 16A, 0.125 Features Description • RDS on = 0.125( Max.) @ VGS = 10V, ID = 8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD18N20LZ FDD18N20LZ Forward Reference Diode ic cgs 160v 110 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Untitled

    Abstract: No abstract text available
    Text: RFP2N20L Data Sheet Title FP2 0L bt A, 0V d 0V, 00 m, gic vel, an- July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use


    Original     		PDF RFP2N20L RFP2N20L TA09532.

    TA09532

    Abstract: No abstract text available
    Text: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use


    OCR Scan     		PDF RFP2N20L TA09532. AN7254 AN7260 TA09532

    Untitled

    Abstract: No abstract text available
    Text: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF RFP2N20 TA09289. RFP2N20 O-220AB O-220AB AN7254 AN7260

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


    OCR Scan     		PDF FRL230R4 e1998 JANSR2N7275 1000K MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL230R4 JANSR2N7396 MIL-STD-750, MIL-S-19500, 500ms;