SOT-23 MOSFET P-CHANNEL a1 1- mark
Abstract: L21e
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
|
Original
|
LP1030D
LP1030D
DSFP-LP1030D
NR011613
SOT-23 MOSFET P-CHANNEL a1 1- mark
L21e
|
PDF
|
MCH6634
Abstract: No abstract text available
Text: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance
|
Original
|
MCH6634
EN8229A
MCH6634
|
PDF
|
mark G1 SOT-23
Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener
|
Original
|
LP1030D
LP1030D
DSFP-LP1030D
NR101512
mark G1 SOT-23
sot-23 MARKING CODE G1
G1 SOT23
sot-23 MARKING CODE IGs
DSPD-5SOT23K1
LP1030
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCH6634 Ordering number : EN8229A N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
|
Original
|
EN8229A
MCH6634
MCH6634
|
PDF
|
MCH6634
Abstract: No abstract text available
Text: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
|
Original
|
MCH6634
ENN8229
MCH6634
|
PDF
|
7P30L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7P30 POWER MOSFET 6.0A, 300V, SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The UTC 7P30 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
|
Original
|
7P30L-TA3-T
7P30G-TA3-T
O-220
QW-R502-918
7P30L
|
PDF
|
circuit diagram of mosfet based smps power supply
Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The
|
Original
|
new/fdc6901l
FDC6901L
FDJ129P
Power247TM,
circuit diagram of mosfet based smps power supply
FSD210 8-pin
6 PIN smps control ic FOR LED DRIVER
SMPS MOSFET
3 phase smps circuit diagram using mosfet
FQP2N60C
1000V P-channel MOSFET
equivalent fsd210
FQPF1N60C
600V 2A MOSFET N-channel
|
PDF
|
p-channel mosfet
Abstract: DIODE 240v 3a KQS4900 logic level n channel MOSFET P Channel Low Gate Charge mosfet p-channel 300v
Text: IC IC SMD Type Dual N & P-Channel, Logic Level MOSFET KQS4900 Features N-Channel 1.3 A, 60 V RDS ON = 0.55 RDS(ON) = 0.65 @ VGS = 10 V @ VGS =5V P-Channel -0.3 A, -300V RDS(ON) = 15.5 RDS(ON) = 16 @ VGS =- 10V @ VGS =-5V Low gate charge ( typical N-Channel 1.6 nC)
|
Original
|
KQS4900
-300V
p-channel mosfet
DIODE 240v 3a
KQS4900
logic level n channel MOSFET
P Channel Low Gate Charge
mosfet p-channel 300v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQS4900
-300V,
FQS4900
FQS4900TF
|
PDF
|
Dual N P-Channel
Abstract: FQS4900
Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQS4900
-300V,
Dual N P-Channel
FQS4900
|
PDF
|
SCH2301
Abstract: No abstract text available
Text: SCH2301 Ordering number : EN8974 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2301 General-Purpose Switching Device Applications Features • • • • • The SCH2301 incorporates two elements in the same package which are P-channel MOSFETs, thereby enabling
|
Original
|
SCH2301
EN8974
SCH2301
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
|
Original
|
6N60-P
O-220F
O-220
6N60-P
O-220F1
O-220F2
O-263
O-251
O-252
QW-R502-969
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RY A IN CTLDM601N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM601N is an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers
|
Original
|
CTLDM601N
CTLDM601N
100mA
INCTLDM601N
|
PDF
|
N and P MOSFET
Abstract: No abstract text available
Text: RY A IN CTLDM601N IM LSURFACE E MOUNT SILICON R P w w w. c e n t r a l s e m i . c o m N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM601N is a silicon N-channel enhancement-mode MOSFET designed for applications including high speed pulsed amplifiers
|
Original
|
CTLDM601N
CTLDM601N
100mA
INCTLDM601N
N and P MOSFET
|
PDF
|
|
|
MCH6629
Abstract: 8239 D1306
Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V
|
Original
|
MCH6629
EN8239A
MCH6629
8239
D1306
|
PDF
|
MCH6629
Abstract: 8239 D1306
Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V
|
Original
|
MCH6629
EN8239A
MCH6629
8239
D1306
|
PDF
|
SVDF8N60F
Abstract: 8N60
Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
|
Original
|
O-220
01-Apr-2011
O-220
O-220F
O-220F
47MAX
75MAX
SVDF8N60F
8N60
|
PDF
|
ap0420
Abstract: AP0432
Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V
|
OCR Scan
|
-160V
-200V
-300V
-320V
-400V
-100V
-250V
18-Lead
AP0416NA
AP0420NA
ap0420
AP0432
|
PDF
|
EIGHT p-channel MOSFET ARRAY
Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =
|
OCR Scan
|
fl773aiS
-250V
18-Lead
SOW-20*
-160V
-15mA
AP0116NB
AP0116NA
AP0116WG
EIGHT p-channel MOSFET ARRAY
AP0116ND
AP0120NA
AP0120NB
AP0120ND
SOW-20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max
|
OCR Scan
|
AP0116
AP0132
AP0120
AP0140
AP0130
-100V
18-Lead
SOW-20*
-160V
-15mA
|
PDF
|
EIGHT MOSFET ARRAY
Abstract: EIGHT n-channel MOSFET ARRAY
Text: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG
|
OCR Scan
|
18-Lead
AN0416NA
AN0420NA
AN0430NA
AN0432NA
AN0440NA
SOW-20*
AN0416WG
AN0416ND
AN0420ND
EIGHT MOSFET ARRAY
EIGHT n-channel MOSFET ARRAY
|
PDF
|
ap0140a
Abstract: 8 Channel Power Mosfet Array
Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information BVDSS/ ^D S O N (min) (max) 700n -160V -200V -300V -320V -400V 600n 600n 700Q 70 0n SI b v dgs @ ^DS -100 V Max *D SS*
|
OCR Scan
|
fl773S`
-160V
-200V
-300V
-320V
-400V
18-Lead
AP0116NB
AP0120NB
AP0130NB
ap0140a
8 Channel Power Mosfet Array
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND
|
OCR Scan
|
AP0116
AP0132
AP0120
AP0140
18-Lead
AP0116NA
AP0120NA
AP0130NA
AP0132NA
AP0140NA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =
|
OCR Scan
|
-100V
-250V
18-Lead
SOW-20*
-160V
-15mA
AP0416NA
AP0416WG
AP0416ND
-200V
|
PDF
|
