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    8N60 Search Results

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    8N60 Price and Stock

    Dialight 598-8N60-107F

    LED GRN/YLW CLEAR 0603 SMD
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    DigiKey 598-8N60-107F Digi-Reel 3,900 1
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    598-8N60-107F Cut Tape 3,900 1
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    Newark 598-8N60-107F Cut Tape 8,000 5
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    Onlinecomponents.com 598-8N60-107F 8,000
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    IBS Electronics 598-8N60-107F 8,000 4,000
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    STMicroelectronics STL18N60M2

    MOSFET N-CH 600V 9A POWERFLAT HV
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    DigiKey STL18N60M2 Digi-Reel 1,783 1
    • 1 $3.3
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    STL18N60M2 Cut Tape 1,783 1
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    STMicroelectronics STL18N60M2 1
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    EBV Elektronik STL18N60M2 143 Weeks 3,000
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    STMicroelectronics STB18N60M2

    MOSFET N-CH 600V 13A D2PAK
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    DigiKey STB18N60M2 Cut Tape 1,664 1
    • 1 $2.58
    • 10 $1.918
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    • 1000 $1.18664
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    STB18N60M2 Digi-Reel 1,664 1
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    • 10 $1.918
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    STB18N60M2 Reel 1,000 1,000
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    RS STB18N60M2 Bulk 5
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    STMicroelectronics STB18N60M2 1,146 1
    • 1 $2.51
    • 10 $1.86
    • 100 $1.44
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    Ameya Holding Limited STB18N60M2 2,000
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    Avnet Silica STB18N60M2 1,000 15 Weeks 1,000
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    EBV Elektronik STB18N60M2 1,000 15 Weeks 1,000
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    Vyrian STB18N60M2 1,702
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    Win Source Electronics STB18N60M2 5,970
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    IXYS Corporation IXGH48N60A3

    IGBT PT 600V 120A TO-247AD
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    DigiKey IXGH48N60A3 Tube 1,124 1
    • 1 $7.06
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    Mouser Electronics IXGH48N60A3 479
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    Vyrian IXGH48N60A3 44
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    Vishay Siliconix SIHP28N60EF-GE3

    MOSFET N-CH 600V 28A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP28N60EF-GE3 Tube 1,000 1
    • 1 $6.08
    • 10 $6.08
    • 100 $3.773
    • 1000 $3.05389
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    Bristol Electronics SIHP28N60EF-GE3 200
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    Find more 8N60 price and stock on Findchips.com

    8N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    8N60 Unisonic Technologies 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF

    8N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8N60

    Abstract: 600v 75a mosfet transistor 8n60 8N60 equivalent MOSFET transistor 75A 600V MOSFET
    Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 8N60 •FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified


    Original     		PDF

    8N60GX

    Abstract: 8n60a 8N60L 8N60 8n60b 8n60g 8N60-B UTC8N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		QW-R502-115 8N60GX 8n60a 8N60L 8N60 8n60b 8n60g 8N60-B UTC8N60 PDF

    115 e

    Abstract: UTC8N60 8N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		QW-R502-115 115 e UTC8N60 8N60 PDF

    8N60L-A TO-220

    Abstract: 8N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		QW-R502-115 8N60L-A TO-220 8N60 PDF

    SVDF8N60F

    Abstract: 8N60
    Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		O-220 01-Apr-2011 O-220 O-220F O-220F 47MAX 75MAX SVDF8N60F 8N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		8N60K-MT 8N60K-MT QW-R502-035 PDF

    8N60

    Abstract: UTC8N60 8n60a 8N60-B 8n60b
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		8N60L QW-R502-115 8N60 UTC8N60 8n60a 8N60-B 8n60b PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60-E Preliminary Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		8N60-E 8N60-E QW-R502-A86 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		8N60L QW-R502-115 PDF

    8n60

    Abstract: 8n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		QW-R502-115 8n60 8n60l PDF

    8N60

    Abstract: 8N60GX 8n60l 8N60G 8N60L-A TO-220 8N60 equivalent 8N60-B mosfet 4b 8n60b TO-220F
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		QW-R502-115 8N60 8N60GX 8n60l 8N60G 8N60L-A TO-220 8N60 equivalent 8N60-B mosfet 4b 8n60b TO-220F PDF

    FR107 SMD

    Abstract: ntc 5d-9 pc817 smd 8N60 1N4148 SMD smd transistor B20100 transistor 5d smd pc817c APPLICATION CIRCUITS 5d9 smd AP3101
    Text: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-A Seriers Number: V1.3-038 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL


    Original     		AP3101 DB-AP3101-A 5V-265V FR107 SMD ntc 5d-9 pc817 smd 8N60 1N4148 SMD smd transistor B20100 transistor 5d smd pc817c APPLICATION CIRCUITS 5d9 smd PDF

    8N60C

    Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
    Text: 8N60C/8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP8N60C/FQPF8N60C FQPF8N60C AN-6014: AN-6014 FAN7602 FQPF8N60CT FQPF8N60CYDTU 8N60C 8N60CT FAN7602 FQPF Series PDF

    8n60

    Abstract: No abstract text available
    Text: E 8N60 VDSS=600V; ID=8.0A; RDS ON =1.0Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage


    Original     		100nA 8n60 PDF

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65 PDF

    8N60

    Abstract: 8N60 equivalent e-bike MARKING A3 C409FP-A Device Marking A3
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET 8N60FP Spec. No. : C409FP-A Issued Date : 2009.04.29 Revised Date : Page No. : 1/8 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7.5A Description The 8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		MTN8N60FP C409FP-A MTN8N60FP O-220FP UL94V-0 8N60 8N60 equivalent e-bike MARKING A3 C409FP-A Device Marking A3 PDF

    uc3842 48v charger

    Abstract: power led uc3842 48V SMPS BATTERY CHARGER bt1 marking uc3842 constant current 1N54
    Text: UNISONIC TECHNOLOGIES CO., LTD UM608 Preliminary LINEAR INTEGRATED CIRCUIT CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS „ DESCRIPTION The UTC UM608 is a highly integrated solution for a constant voltage/constant current mode SMPS application.


    Original     		UM608 UM608 QW-R105-043 uc3842 48v charger power led uc3842 48V SMPS BATTERY CHARGER bt1 marking uc3842 constant current 1N54 PDF

    8N60M

    Abstract: 8N60 TM8N60 8N55 H8N60
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TH 8N 55 M T H 8N 60 M TM 8N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S Power FETs are designed fo r h ig h voltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regulators,


    OCR Scan     		C-83Q O-218AC 8N60M 8N60 TM8N60 8N55 H8N60 PDF

    MTH8N55

    Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
    Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high


    OCR Scan     		MTH8N55 MTH8N60 MTM8N60 Y145M. O-218AC DIODE MOTOROLA B33 3fc relay 000073S AN569 U055 TO 521 MH PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 8N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 8N60E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS


    OCR Scan     		8N60E/D 8N60E 340K-01 PDF

    ssm8n55

    Abstract: SSM8N60
    Text: •7964142 Tf l ' DE I 7Tbm4S SAMSUNG SEMICONDUCTOR □ □ 0 S 3 2 ci h -V 98D IN C 05329 _ D ' _ : . ' 7 - - J 7 - / 3 -• N-CHANNEL POWER MOSFETS SSM8N55/8N60 FEATURES • • • • • .• • • • Low Ros<on at high voltage


    OCR Scan     		SSM8N55/8N60 SSM8N55 SSM8N60 00GS435 SSM8N60 PDF

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF