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    MOSFET P75N02LDG Search Results

    MOSFET P75N02LDG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P75N02LDG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELM32428LA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM32428LA-S •概要 ■特点 ELM32428LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=75A ·Rds on < 7mΩ (Vgs=10V) ·Rds(on) < 10mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM32428LA-S P75N02LDG O-252 Jun-11-2005 ELM32428LA

    P75N02LDG

    Abstract: P75N02
    Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		PDF ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG P75N02

    P75N02LDG

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32428LA-S •General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		PDF ELM32428LA-S ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    P75N02LDG

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32428LA-S •概要 ■特長 ELM32428LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=75A ・ Rds on < 7mΩ (Vgs=10V) ・ Rds(on) < 10mΩ (Vgs=4.5V)


    Original     		PDF ELM32428LA-S P75N02LDG O-252 Jun-11-2005 P75N02LDG

    P75N02LDG

    Abstract: EQUIVALENT* p0903bdg P0903BDG p0903bd EQUIVALENT* p75n02ldg p0903bdg similar MARKING WM4 SOT-23 mosfet p75n02ldg 3 phase pwm generator similar to p0903bdg
    Text: DATASHEET IDTP62000 2/3/4-PHASE PWM CONTROLLER WITH DYNAMIC VOLTAGE & FREQUENCY SCALING Description Features The IDTP62000 is a multiphase interleaved synchronous buck controller ideal for personal computer applications where high efficiency and high power density are required.


    Original     		PDF IDTP62000 IDTP62000 IDTP67111 P75N02LDG EQUIVALENT* p0903bdg P0903BDG p0903bd EQUIVALENT* p75n02ldg p0903bdg similar MARKING WM4 SOT-23 mosfet p75n02ldg 3 phase pwm generator similar to p0903bdg