NTR0202PL
Abstract: NTR0202PLT1 NTR0202PLT1G NTR0202PLT3 NTR0202PLT3G
Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space
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NTR0202PL
OT-23
NTR0202PL/D
NTR0202PL
NTR0202PLT1
NTR0202PLT1G
NTR0202PLT3
NTR0202PLT3G
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Untitled
Abstract: No abstract text available
Text: NTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space
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NTR0202PL
NTR0202PL/D
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Untitled
Abstract: No abstract text available
Text: NTR0202PL, NVTR0202PL Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features http://onsemi.com • Low RDS on Provides Higher Efficiency and Extends Battery Life • • • RDSon = 0.80 W, VGS = −10 V RDSon = 1.10 W, VGS = −4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space
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NTR0202PL,
NVTR0202PL
OT-23
AEC-Q101
NTR0202PL/D
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MSFA0M02X8
Abstract: DFN3
Text: CYStech Electronics Corp. Spec. No. : C724X8 Issued Date : 2009.06.12 Revised Date : Page No. : 1/9 P-Channel Logic Level Enhancement Mode MOSFET with Schottky Diode MSFA0M02X8 MOSFET product Summary BVDSS RDSON MAX ID -20V 100mΩ -3A Schottky Product Summary
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C724X8
MSFA0M02X8
UL94V-0
MSFA0M02X8
DFN3
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248E-6
Abstract: STMicroelectronics 9*918 F 9212 L6472 ACT 600 diode S 335
Text: L6472 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETs ■ Programmable speed profile ■ Programmable Power MOSFET slew rate
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L6472
248E-6
STMicroelectronics 9*918
F 9212
L6472
ACT 600
diode S 335
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Untitled
Abstract: No abstract text available
Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge
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NTB65N02R,
NTP65N02R
NTB65N02R/D
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65N02R
Abstract: 65N02 65N02RG p65n02rg 418AA-01 NTB65N02R NTB65N02RG NTB65N02RT4 NTP65N02R p65n02
Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge
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NTB65N02R,
NTP65N02R
O-220,
NTB65N02R/D
65N02R
65N02
65N02RG
p65n02rg
418AA-01
NTB65N02R
NTB65N02RG
NTB65N02RT4
NTP65N02R
p65n02
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Untitled
Abstract: No abstract text available
Text: L6472 dSPIN fully integrated microstepping motor driver with motion engine and SPI Features • Operating voltage: 8 - 45 V ■ 7.0 A output peak current 3.0 A r.m.s. ■ Low RDSon power MOSFETs ■ Programmable speed profile ■ Programmable Power MOSFET slew rate
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L6472
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fdb5800
Abstract: No abstract text available
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A Motor Load Control High performance trench technology for extermely low Rdson DC-DC Converters and Off-Line UPS
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FDB5800
O-263AB
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3c sot363
Abstract: SOT-363 Marking 6C mtdk sot-363 marking 3C
Text: CYStech Electronics Corp. ESD protected N-CHANNEL MOSFET MTDK3S6R BVDSS ID RDSON Spec. No. : C447S6R Issued Date : 2009.06.03 Revised Date : Page No. : 1/6 20V 100mA 3Ω Description • Low voltage drive, 1.8V • Easy to use in parallel • High speed switching
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C447S6R
100mA
OT-363
UL94V-0
3c sot363
SOT-363 Marking 6C
mtdk
sot-363 marking 3C
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65n02r
Abstract: 65N02 p65n02r P65N02
Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS
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NTB65N02R,
NTP65N02R
O-220,
NTP65N02R
65n02r
65N02
p65n02r
P65N02
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FDB5800
Abstract: No abstract text available
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A Motor/ Body Load Control High performance trench technology for extermely low Rdson ABS Systems Power Train Management
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FDB5800
O-263AB
FDB5800
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65n02r
Abstract: 65N02 NTB65N02R NTB65N02RT4 NTP65N02R p65n02 p65n02r
Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS
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NTB65N02R,
NTP65N02R
O-220,
NTB65N02R/D
65n02r
65N02
NTB65N02R
NTB65N02RT4
NTP65N02R
p65n02
p65n02r
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65n02r
Abstract: No abstract text available
Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 65 A, 24 V
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NTB65N02R,
NTP65N02R
O-220,
NTB65N02R/D
65n02r
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NTB65N02R
Abstract: NTB65N02RT4 NTP65N02R 0012Tj
Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 65 A, 24 V
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NTB65N02R,
NTP65N02R
O-220,
NTB65N02R/D
NTB65N02R
NTB65N02RT4
NTP65N02R
0012Tj
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fdb fairchild
Abstract: FDB5800
Text: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A DC-DC Converters and Off-Line UPS High performance trench technology for extermely low Rdson Low Gate Charge High power and current handling capability
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FDB5800
O-263AB
FDB5800
102oC,
fdb fairchild
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PA 0016 diagram
Abstract: P-channel MOSFET
Text: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM10P06
O-252
TSM10P06CP
O-252
PA 0016 diagram
P-channel MOSFET
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DPAK A11
Abstract: MOSFET TO-252
Text: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM10P06
O-252
TSM10P06CP
O-252
DPAK A11
MOSFET TO-252
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irlml6346
Abstract: IRLML6344 IRLML6344TR irlml6244 IRLML6246 IRLML9303 irlml2060 IRLML9301 IRLML6344TRPBF IRLML0060
Text: PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 29 mΩ 37 mΩ RDS on max (@VGS = 4.5V) G 1 3 D S RDS(on) max (@VGS = 2.5V) Micro3TM (SOT-23) IRLML6344TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Low RDSon (<29mΩ)
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IRLML6344TRPbF
OT-23)
OT-23
AN-994.
irlml6346
IRLML6344
IRLML6344TR
irlml6244
IRLML6246
IRLML9303
irlml2060
IRLML9301
IRLML6344TRPBF
IRLML0060
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TSM10N06
Abstract: No abstract text available
Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM10N06
O-252
TSM10N06CP
TSM10N06
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3 watt 70v zener diode
Abstract: inkjet print head interface K784P
Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP
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00V-600V;
DO-220AA
V-540V;
V-440V
DO-204AL
DO-41)
DO-204AC
DO-15)
3 watt 70v zener diode
inkjet print head interface
K784P
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h-bridge pwm schematics circuit
Abstract: H-bridge speed control 12v 10a 10a h-bridge driver 12vdc motor forward reverse control diagram H-bridge motor drive source code h-bridge gate drive schematics circuit mosfet based h bridge TRANSISTORS BJT list Switching Power supply with HIP4080A HRF3205 equivalent
Text: Column #52: Stamp-controlled High-power H-bridge Column #52, August 1999 by Lon Glazner: Stamp-Controlled High Power H-Bridge It seems like quite a few people are using BASIC Stamps as the brains in low-level robotics. Because of simplicity, ease of use, and versatility, it's no wonder that the
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Untitled
Abstract: No abstract text available
Text: LX7302 5V to 26V Synchronous Step Down DC-DC Controller Production Datasheet Description Features The LX7302 is a single phase step down DC-DC controller IC designed to drive a high side N-channel MOSFET and a low side N-channel synchronous rectifier. The LX7302 uses a fixed on-time hysteretic
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LX7302
LX7302
155mm(
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diode zener fz 5.6v
Abstract: toko rcl ADP1821 20SP180M 2R5SEPC820M BAT54 FDV0620-2R2M IRFR3709Z IRLR7807Z
Text: Step-Down DC-to-DC Controller ADP1821 FEATURES GENERAL DESCRIPTION Wide power-input voltage range: 1 V to 24 V Chip supply voltage range: 3 V to 5.5 V Wide output voltage range: 0.6 V to 85% of input voltage 1% accuracy, 0.6 V reference voltage All N-channel MOSFET design for low cost
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ADP1821
16-lead
ADP1821
MO-137-AB
RQ-16)
ADP1821ARQZ-R7
ADP1821-EVAL
D05310-0-12/06
diode zener fz 5.6v
toko rcl
20SP180M
2R5SEPC820M
BAT54
FDV0620-2R2M
IRFR3709Z
IRLR7807Z
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