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    DPAK A11

    Abstract: MOSFET TO-252
    Text: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM10P06 O-252 TSM10P06CP O-252 DPAK A11 MOSFET TO-252

    PA 0016 diagram

    Abstract: P-channel MOSFET
    Text: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM10P06 O-252 TSM10P06CP O-252 PA 0016 diagram P-channel MOSFET