A1 SOT323 MOSFET P-CHANNEL
Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
Text: AF1333P P-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline SOT323 The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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AF1333P
OT323)
-550mA
1333P
OT323
A1 SOT323 MOSFET P-CHANNEL
marking G SOT323 Transistor
SOT323 MOSFET P
12V P-Channel Power MOSFET
AF1333P
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AF1332N
Abstract: No abstract text available
Text: AF1332N N-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive - 2KV ESD Rating Per MIL-STD-883D - Small Package Outline (SOT323) The advanced power MOSFET provides the designer with the best combination of fast switching, low
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AF1332N
MIL-STD-883D)
OT323)
600mA
1332N
OT323
AF1332N
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2SK3018
Abstract: 3018G 2SK3018 UTC
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is
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UK3018
2SK3018
400mA
UK3018G-AE2-R
UK3018G-AL3-R
OT-23-3
OT-323
QW-R502-313
3018G
2SK3018 UTC
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NX3008NBKMB
Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety
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OT223
DFN1006B-3,
AEC-Q101
Q3/2012
NX3008NBKMB
BSS138BK
BSS84AKS
PMV48XP
BSH201
2N7002PW
nx2301
PMPB27XP
PMF170XP
2N7002PS
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NX3020NAK
Abstract: No abstract text available
Text: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKW
OT323
SC-70)
NX3020NAK
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Untitled
Abstract: No abstract text available
Text: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKW
OT323
SC-70)
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Untitled
Abstract: No abstract text available
Text: SO T3 23 PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF170XP
OT323
SC-70)
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Untitled
Abstract: No abstract text available
Text: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002AKW
OT323
SC-70)
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Untitled
Abstract: No abstract text available
Text: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit
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UM2302
UM2302S
OT23-3
UM2302P
OT323
UM2302
OT23-3
OT323
115mA
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placeholder for manufacturing site code
Abstract: No abstract text available
Text: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF87EN
OT323
SC-70)
placeholder for manufacturing site code
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3018G
Abstract: UK3018G Device Marking 313
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low
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UK3018
UK3018
400mA
UK3018G-AE2-R
UK3018G-AL3-R
OT-23-3
OT-323
QW-R502-313
3018G
UK3018G
Device Marking 313
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MOSFET SOT-23 marking 122
Abstract: 122e mosfet marking 506
Text: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3 The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT7401
OT-23-3
O-236)
OT-323
UT7401
OT-23
SC-59)
UT7401L-AE2-R
UT7401G-AE2-R
UT7401L-AE3-R
MOSFET SOT-23 marking 122
122e
mosfet marking 506
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 3 3 2 1 2 SOT-23-3 The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT7401
OT-23-3
UT7401
OT-323
O-236)
OT-23
SC-59)
UT7401G-AE2-R
UT7401G-AE3-R
UT7401G-AL3-R
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2.5V "Power MOSFET"
Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is
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UK3018
OT-23
2SK3018
OT-323
400mA
UK3018L
UK3018G
UK3018-AE3-R
UK3018-ALt
QW-R502-313
2.5V "Power MOSFET"
MOSFET IGSS 100A
n-channel mosfet SOT-23
2SK3018 SOT-23
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2N7002BKW
Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
771-2N7002BKW115
2N7002BKW
2n7002bk
TRANSISTOR SMD MARKING CODE 50
006-AA
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2N7002PW
Abstract: smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
gate-s13
2N7002PW
smd code marking WV
transistor sc-70 marking codes
SOT323 MOSFET P
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Untitled
Abstract: No abstract text available
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
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2N7002PW
Abstract: No abstract text available
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
50itions
771-2N7002PW-115
2N7002PW
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Untitled
Abstract: No abstract text available
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
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MARKING SMD x9
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
MARKING SMD x9
MOSFET TRANSISTOR SMD MARKING CODE A1
smd code marking WV
2n7002bkw
transistor smd code marking nc
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Untitled
Abstract: No abstract text available
Text: SO T3 23 PMF250XN 30 V, 0.9 A N-channel Trench MOSFET Rev. 1 — 7 December 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF250XN
OT323
SC-70)
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Untitled
Abstract: No abstract text available
Text: SO T3 23 PMF77XN 30 V, single N-channel Trench MOSFET Rev. 1 — 27 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF77XN
OT323
SC-70)
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A1 SOT323 MOSFET P-CHANNEL
Abstract: No abstract text available
Text: SO T3 23 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3008PBKW
OT323
SC-70)
AEC-Q101
A1 SOT323 MOSFET P-CHANNEL
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Untitled
Abstract: No abstract text available
Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS138BKW
OT323
SC-70)
AEC-Q101
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