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Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
ELM33416CA-S
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
ELM33416CA-S
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33416CA-S •General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
ELM33416CA-S
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Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM33416CA-S •概要 ■特長 ELM33416CA-S は低入力容量 低電圧駆動、 低 ・ Vds=100V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=1.3A ・ Rds on < 230mΩ (Vgs=10V) ・ Rds(on) < 240mΩ (Vgs=5V)
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ELM33416CA-S
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IRLM120A
Abstract: No abstract text available
Text: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.22 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRLM120A
OT-223
IRLM120A
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IRLM110A
Abstract: No abstract text available
Text: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.44 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRLM110A
OT-223
IRLM110A
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Untitled
Abstract: No abstract text available
Text: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A • RDS(on) = 64mΩ ( Typ.) @ VGS = 5V, ID = 12A • Low Gate Charge ( Typ. 22.2nC) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially
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FDD850N10L
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FDD850N10L
Abstract: 157A
Text: FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75mΩ Features Description • RDS on = 61mΩ ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDD850N10L
FDD850N10L
157A
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mosfet vgs 5v vds 100v
Abstract: No abstract text available
Text: SSD50N10-18D 43A , 100V , RDS ON 18mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)
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SSD50N10-18D
O-252
O-252
16-Apr-2013
mosfet vgs 5v vds 100v
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IRL530A
Abstract: No abstract text available
Text: IRL530A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.12Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 14 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n Lower Leakage Current : 10 A (Max.) @ VDS = 100V
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IRL530A
O-220
IRL530A
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IRLM120A
Abstract: No abstract text available
Text: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.22 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRLM120A
OT-223
IRLM120A
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IRLM110A
Abstract: No abstract text available
Text: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V ν Avalanche Rugged Technology RDS on = 0.44 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.5 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRLM110A
OT-223
IRLM110A
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type N-Channel MOSFET KX7N10L SOT-223 ● V DS V = 100V Unit: mm +0.2 3.50-0.2 +0.2 -0.2 0.1max +0.05 0.90-0.05 6.50 ● ID = 1.7 A (V GS = 10V) ● RDS(ON) ＜ 350mΩ (VG S = 10V), ID=0.85A +0.1 3.00-0.1 +0.15 1.65-0.15 • Features +0.2 0.90-0.2
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KX7N10L
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Untitled
Abstract: No abstract text available
Text: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.22 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRLM120A
OT-223
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS10ASH-2 HIGH-SPEED SWITCHING USE FS10ASH-2 OUTLINE DRAWING 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm q w e wr ¡2.5V DRIVE ¡VDSS . 100V
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FS10ASH-2
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Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS5AS-2 HIGH-SPEED SWITCHING USE FS5AS-2 OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 r A 0.5 ± 0.2 0.8 2.3 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡10V DRIVE ¡VDSS . 100V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS5VS-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS5VS-2 1 B 5 0.5 q w e wr ¡10V DRIVE ¡VDSS . 100V
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O-220S
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Untitled
Abstract: No abstract text available
Text: IRLM110A Advanced Power MOSFET FEATURES BVDSS = 100 V ν Avalanche Rugged Technology RDS on = 0.44 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.5 A ν Improved Gate Charge ν Extended Safe Operating Area SOT-223 ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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OT-223
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mosfet vgs 5v vds 100v
Abstract: No abstract text available
Text: SGM0410 3.5A , 100V , RDS ON 170 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best combination of fast switching, ruggedized device design, low
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OT-89
SGM0410
OT-89
19-Apr-2012
mosfet vgs 5v vds 100v
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N-Channel
Abstract: No abstract text available
Text: TSM2328 100V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 100 V RDS on (max) 250 mΩ Qg 11.1 nC Block Diagram Features ● Low RDS(ON) 250mΩ (Max.) ● Low gate charge typical @ 11.1nC (Typ.)
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TSM2328
OT-23
TSM2328CX
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Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS5VSH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS5VSH-2 1 B 5 0.5 q w e wr ¡2.5V DRIVE ¡VDSS . 100V
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O-220S
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Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS10VSH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 1.5 FS10VSH-2 1 B 5 0.5 q w e wr ¡2.5V DRIVE ¡VDSS . 100V
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O-220S
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Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FS5UM-2 HIGH-SPEED SWITCHING USE FS5UM-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. D 0.8 2.54 2.54 0.5 2.6 4.5MAX. 12.5MIN. f 3.6 q w e wr ¡10V DRIVE ¡VDSS . 100V
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Abstract: No abstract text available
Text: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V
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IRLW/I540A
0D3T32S
b4142
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