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    MOSFETS FL PHILIPS Search Results

    MOSFETS FL PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFETS FL PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tea1601

    Abstract: TEA1601 PHILIPS smps circuit diagrams smps resonant llc IC TL431c opto Full-bridge LLC resonant converter philips cnx82a AC to DC smps circuit diagram pages AN99011 1nf 100v mkt capacitor
    Text: APPLICATION NOTE 90W Resonant SMPS with TEA1610 SwingChipTM AN99011 Philips Semiconductors 90W Resonant SMPS with TEA1610 SwingChipTM Application Note AN99011 Abstract This report describes a 90W Resonant Switched Mode Power Supply ResSMPS for a typical TV or monitor


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    PDF TEA1610 AN99011 p-16124 R1206 SFR25H tea1601 TEA1601 PHILIPS smps circuit diagrams smps resonant llc IC TL431c opto Full-bridge LLC resonant converter philips cnx82a AC to DC smps circuit diagram pages AN99011 1nf 100v mkt capacitor

    GEC Marconi Materials Technology

    Abstract: ford ppap INCOMING RAW MATERIAL specification in-process quality control ford motor company Ford in-process quality INCOMING RAW MATERIAL INSPECTION procedure ford m Nokia 9000 INCOMING RAW MATERIAL INSPECTION procedure work instruction raw material stores delco semiconductors
    Text: BRIEF HISTORY of HARRIS SEMICONDUCTOR The modern-day Harris Corporation has its roots in Radiation, Inc., an electronics company formed in Melbourne, Florida, in 1950. Radiation was founded shortly after the first rocket was launched from Cape Canaveral. The company's original staff of 12 employees pioneered the


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    BFQ93A

    Abstract: Philips varicap BFG18 MPF102 modelS philips catv 860 amplifier ic BFG480W j175 fet 2SK163 2SK43 transistor baw 92
    Text: RF 매뉴얼 7차판 Application and design manual for RF products November 2005 발행일: 2005년 11월 문서 주문 번호: 9397 750 15371 Philips RF Manual 7th Edition 2 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 당사의 RF 매뉴얼 7차판을 찾아주신 고객님을 환영합니다. 저희는 애플리케이션에 기반한 정보에 완전


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    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    BF1201A

    Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
    Text: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26


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    PDF S11/S22 BGS67A BGY68 BGY66B BGY67 13MHz 900MHz SA8027 TSSOP20) 44MHz BF1201A bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A

    philips rf manual

    Abstract: jedec JESD625-a Philips varicap tef6860 TEF6860HL philips catv 860 amplifier ic small signal transistor philips manual rf push pull mosfet power amplifier TEA5767 TEF6901H
    Text: RF 매뉴얼 6차 개정 RF 제품에 대한 애플리케이션 및 디자인 매뉴얼 2005년 5월 Henk Roelofs 부사장 겸 사업부장 RF 제품부 개 요 본 RF 매뉴얼은 RF 시스템에 대한 광범위한 각종 자료와 다양한 측면을 망라하였습니다. 본 문서에서는 RF 소 小 신호 개별 부품 (Small signal


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    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


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    PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    24V 20A SIEMENS battery charger

    Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
    Text: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.


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    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


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    fq1236

    Abstract: tuner 3139 147 18291 FM1216ME FQ1236/F H-3 tuner 3139 147 tv tuner FM1216ME philips tv tuner 3139 147 FQ1216ME FM1216ME Mk3 tv tuner 3139 147 18261
    Text: FQ1200MK3/FM1200MK3 FAMILY Application Note Disclaimer This document is believed to be correct at the time of publication. Whilst every care has been taken to ensure its accuracy, the copyright owner accepts absolutely no liability for any losses or damages arising


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    PDF FQ1200MK3/FM1200MK3 FQ/FM1200MK3 FQ1236 FQ1236MK3 tuner 3139 147 18291 FM1216ME FQ1236/F H-3 tuner 3139 147 tv tuner FM1216ME philips tv tuner 3139 147 FQ1216ME FM1216ME Mk3 tv tuner 3139 147 18261

    TRANSISTOR m29

    Abstract: MAM124 K 3053 TRANSISTOR
    Text: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


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    PDF BF909; BF909R OT143R. TRANSISTOR m29 MAM124 K 3053 TRANSISTOR

    K 3053 TRANSISTOR

    Abstract: TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235
    Text: Philips Semiconductors Product specification N-ohannel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage BF909; BF909R transistor consists of an amplifier M O S-FET with source and substrate interconnected and an internal bias circuit to


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    PDF BF909; BF909R MBC845 OT143R. K 3053 TRANSISTOR TRANSISTOR m29 BF909 marking code dual gate mos BF909R marking 550 sot143 marking M29 PRs transistor BF909,235

    BF1100R

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.


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    PDF BF1100; BF1100R OT143R. BF1100R

    BF908 Application Note

    Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
    Text: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS


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    PDF RNR-T45-97-F-805 12Vtypes BF998, BF908 BF1100, OT143) BF998R, BF908R BF1100R, OT143R) BF908 Application Note BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH

    PHC21025

    Abstract: No abstract text available
    Text: Philips Semiconductors Ideas for design Small-signal Field-effect Transistors POWER/BATTERY SWITCHING USING VD-MOS-FETS A Power switch can be used to disconnect a load during a period of non use. The load may be anything from a light bulb, an electronic valve, a stepper or brush motor to


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    igfet

    Abstract: lm 7803 BSIM 3v3 ED-44 ED44 IEDM1993 bsim3v3
    Text: Accurate Drain Conductance Modeling for Distortion Analysis in MOSFETs R. van Langevelde and F.M. Klaassen Electronic Devices Group Eindhoven University of Technology Eindhoven, The Netherlands A bstract Present compact circuit-level MOSFET models fail to


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    PDF ED-43, Vb-53 314-IEDM igfet lm 7803 BSIM 3v3 ED-44 ED44 IEDM1993 bsim3v3

    f g megamos

    Abstract: No abstract text available
    Text: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC5041 P r o g r a m m a b l e DC-DC C o n v e r t e r f or P e n t i u m P55C, K6 , and 6 x 8 6 M X ™ M 2 P r o c e s s o r s • Programmable output from 2.1V to 3.5V using integrated


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    PDF RC5041 200KHz DS30005041 f g megamos

    PMV117EN

    Abstract: PMV213SN PMV30UN PMV40UN PMV31XN PMV56XN PMV60EN SC75 SC89
    Text: [iTrenchMOS SOT23ÎJ^03100V,30VÎQ20V N - j l ! ÉfôMOSFET « I f J S f f l Œ f r i l f 1? ffPM V^^IJ^JIO O V ' 3 0 V 2 0 V 0 ^ N iiiiM O S F E T » jf ö iH : ^ ] W Ä t l Ä K ’ ® ^ Ü # H M S O T 2 3 Î f ^ » P M V ^ M T O Semiconductors »m mm & b ' s


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    PDF 30vffl20v PMV213SN PMV117EN PMV60EN PMV56XN PMV31XN PMV40UN PMV30UN SC75 SC89

    TDA7052 application note

    Abstract: 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide TDA7050 PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE
    Text: Objective specification Philips Semiconductors Listening-in and handsfree ICs IC03 OVERVIEW OF LISTENING-IN ICs Supply voltage V Details Type Current Speech Line consumpt. powered part (mA) PD<1> TDA7050 loudspeaker amplifier 1.6 to 6.0 no no 3.2 no TDA7052


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    PDF TDA7050 TDA7052 TEA1083 TEA1083A TEA1083 TEA1085 TEA1085A TEA1097 TDA7052 application note 211S Philips Semiconductors Selection Guide Philips Semiconductors Power Diodes Selection Guide PZT2369 8048 microcontroller APPLICATION OM6202 BSS89 APPLICATION PDTA114EE

    ndp706al

    Abstract: rc5040 2SK1388 1000 watt step down converter scheme 2sk 30A MOSFET 40A Adjustable Power Supply Schematic Diagram National instrument 5A MOSFET gate driver SMD CODE TRANSISTOR 2SK transistor smd zc ce 6MV1000GX
    Text: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm RC5040 P r o g r a m m a b l e S y n c h r o n o u s DC-DC C o n v e r t e r Features Description • Programmable output from 2.1V to 3.5V using integrated 4-bit DAC • 87% efficiency • Oscillator frequency adjustable from 200KHz to 1MHz


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    PDF RC5040 200KHz DS30005040 ndp706al rc5040 2SK1388 1000 watt step down converter scheme 2sk 30A MOSFET 40A Adjustable Power Supply Schematic Diagram National instrument 5A MOSFET gate driver SMD CODE TRANSISTOR 2SK transistor smd zc ce 6MV1000GX

    Untitled

    Abstract: No abstract text available
    Text: September 1994 Micro Linear ML6509 Active SCSI Terminator GENERAL DESCRIPTION FEATURES The ML6S09 BiCMOS SCSI terminator provides active termination in a SCSI system with single-ended drivers and receivers, in full compliance with the SCSI-1, SCSI-2 and SCSI-3 recommendations. It provides a 2.85V


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    PDF ML6509 ML6S09 0-24mA Q4070 ML6509 100ns 200ns 300ns

    BS107 spice

    Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
    Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT


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    PDF PHB87N03LT PHP87N03LT PHB69N03LT PHD69N03LT PHP69N03LT PHB55N03LT PHD55N03LT PHP55N03LT PHB50N03LT PHP50N03LT BS107 spice BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 bsh201 SFE 7.2 k75-10