2sd880 equivalent
Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852* Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They
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MJE5850,
MJE5851
MJE5852
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2sd880 equivalent
tip3055 equivalent
BU108
mje2055
2n3055 motor control circuits
2N6576 equivalent
equivalent of 2sc2071
2N6107 equivalent
BU326
BU100
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BU108
Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —
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MJE2361T
MJE2360T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
TIP105 Darlington transistor
BDX54
BU326
BU100
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2SD418
Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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MJ10000
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SD418
TIP33C equivalent
k 3436 transistor
IR647
TIP121 transistor
buv18a
BU108
2SC1086
tip122 motor control
2N6023
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2SA1046
Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.
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2N6251
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SA1046
2N3055
BU108
transistor K 3596
BU326
BU100
TL MJE2955T
MJE3055T
2N3174
2SC936
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TRANSISTOR BC 208
Abstract: 2N3055 BU108 Mje350 2SB527 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line–operated equipment requiring high fT. • High DC Current Gain hFE = 40 – 160 @ IC = 20 mAdc
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MJE3439
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
TRANSISTOR BC 208
2N3055
BU108
Mje350
2SB527
BDX54
BU326
BU100
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application MJ10023
Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
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MJ10022
MJ10023
MJ10023
Performanc32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
application MJ10023
BU108
2N6058
2n3055 motor control circuits
darlington tip31
mj15004 equivalent
BDX54
bd139 equivalent transistor
MJ15022 equivalent
2SB56
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motorola 039
Abstract: 418C MSRB860-1
Text: MOTOROLA Order this document by MSRB860–1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MSRB860-1 SWITCHMODE Soft Recovery Power Rectifier D2PAK–SL Straight Lead SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES 600 VOLTS Designed for use as free wheeling diodes in variable speed motor control
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MSRB860
MSRB860-1
motorola 039
418C
MSRB860-1
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418C
Abstract: AN569 MTB6N60E1
Text: MOTOROLA Order this document by MTB6N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB6N60E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB6N60E1/D
MTB6N60E1
418C
AN569
MTB6N60E1
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418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
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MTB4N80E1/D
MTB4N80E1
418C
AN569
MTB4N80E1
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418C
Abstract: AN569 MTB4N80E1
Text: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB4N80E1/D
MTB4N80E1
418C
AN569
MTB4N80E1
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motorola 549 diode
Abstract: diode Fr 10e AN569 MTB75N05HD
Text: MOTOROLA Order this document by MTB75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount MTB75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ N–Channel Enhancement–Mode Silicon Gate
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MTB75N05HD/D
MTB75N05HD
motorola 549 diode
diode Fr 10e
AN569
MTB75N05HD
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AN569
Abstract: MTB75N05HD
Text: MOTOROLA Order this document by MTB75N05HD/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ N–Channel Enhancement–Mode Silicon Gate
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MTB75N05HD/D
MTB75N05HD
MTB75N05HD/D*
AN569
MTB75N05HD
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AN569
Abstract: MTB6N60E SMD310
Text: MOTOROLA Order this document by MTB6N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB6N60E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS on = 1.2 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB6N60E/D
MTB6N60E
AN569
MTB6N60E
SMD310
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AN569
Abstract: MTB33N10E SMD310
Text: MOTOROLA Order this document by MTB33N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB33N10E Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on = 0.06 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB33N10E/D
MTB33N10E
MTB33N10E/D*
AN569
MTB33N10E
SMD310
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MTB4N80E
Abstract: AN569 SMD310 824 mosfet
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB4N80E/D
MTB4N80E
MTB4N80E/D*
MTB4N80E
AN569
SMD310
824 mosfet
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1029 01
Abstract: AN569 MTB10N40E SMD310
Text: MOTOROLA Order this document by MTB10N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB10N40E Motorola Preferred Device TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.55 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB10N40E/D
MTB10N40E
MTB10N40E/D*
1029 01
AN569
MTB10N40E
SMD310
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AN569
Abstract: MTB2P50E SMD310
Text: MOTOROLA Order this document by MTB2P50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2P50E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 6.0 OHM P–Channel Enhancement–Mode Silicon Gate
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MTB2P50E/D
MTB2P50E
MTB2P50E/D*
AN569
MTB2P50E
SMD310
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TMOS E-FET
Abstract: MTB52N06V SMD310 AN569
Text: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA Data Sheet V MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB52N06V/D
MTB52N06V
MTB52N06V/D*
TMOS E-FET
MTB52N06V
SMD310
AN569
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TMOS E-FET
Abstract: AN569 MTB52N06VL SMD310
Text: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet V MTB52N06VL Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM
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MTB52N06VL/D
MTB52N06VL
MTB52N06VL/D*
TMOS E-FET
AN569
MTB52N06VL
SMD310
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motorola an569 thermal
Abstract: mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. High Energy Power FET D2PAK for Surface Mount MTB4N80E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate
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MTB4N80E/D
MTB4N80E/D
MTB4N80E/D*
motorola an569 thermal
mosfet transistor 400 volts.100 amperes
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet V MTB52N06VL Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM
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MTB52N06VL/D
MTB52N06VL
MTB52N06VL/D*
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TH 2190 mosfet
Abstract: TMOS E-FET AN569 MTB30P06V SMD310 TH 2190 Transistor
Text: MOTOROLA Order this document by MTB30P06V/D SEMICONDUCTOR TECHNICAL DATA Data Sheet V MTB30P06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.080 OHM P–Channel Enhancement–Mode Silicon Gate
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MTB30P06V/D
MTB30P06V
MTB30P06V/D*
TH 2190 mosfet
TMOS E-FET
AN569
MTB30P06V
SMD310
TH 2190 Transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB33N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB33N10E Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on = 0.06 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB33N10E/D
MTB33N10E
MTB33N10E/D
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