mosfet p321
Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS
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AN215A/D
AN215A
mosfet p321
motorola an215a application
Y12t
Using Linvill Techniques
AN166 linvill
H12C TRANSISTOR MAKING
dual-gate YB
motorola an215a
Y parameters of transistors
y11t
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mosfet p321
Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
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AN215A/D
AN215A
mosfet p321
Y12t
Using Linvill Techniques
Using Linvill Techniques for R. F. Amplifiers
y11t
AN166
B22K
2S12
2Z12
AN215A
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AN215A
Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
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AN215A/D
AN215A
AN215A
mosfet p321
Y12t
Using Linvill Techniques
common base amplifier circuit designing
Using Linvill Techniques for R. F. Amplifiers
y11t
h21b
Y12F
common emitter amplifier circuit designing
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1n4740 MOTOROLA
Abstract: 18006-1-Q1 motorola AN211A MRF136Y mrf136y design motorola bipolar transistor data manual 319B-02 planar transformer theory j342 1N4740
Text: MOTOROLA Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
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MRF136Y/D
MRF136Y
1n4740 MOTOROLA
18006-1-Q1
motorola AN211A
MRF136Y
mrf136y design
motorola bipolar transistor data manual
319B-02
planar transformer theory
j342
1N4740
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J50 mosfet
Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
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MRF136
MRF136
AN215A.
J50 mosfet
J119 fet
transistor k 2723
J892
J168
J119 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5015/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF5015
MRF5015/D*
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MRF1550F
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
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MRF1550T1
MRF1550FT1
MRF1550F
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MRF1550
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1550
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527 MOSFET TRANSISTOR motorola
Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF134 . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance
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MRF134
MRF134
AN215A
527 MOSFET TRANSISTOR motorola
vk200* FERROXCUBE
SELF vk200
Beckman resistor network
mrf134 motorola
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BROADBAND TRANSFORMERS AND POWER
Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
Text: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of
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AN878
BROADBAND TRANSFORMERS AND POWER
erie redcap capacitors
MRF317 LINEAR RF AMPLIFIER
C band FET transistor s-parameters
AN878
MRF317 linear amplifier
MRF317 LINEAR RF BOARD
erie redcap
"common drain" amplifier impedance matching
Arco 403
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equivalent for transistor tt 2206
Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts
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MRF163,
MRF163
AN215A
equivalent for transistor tt 2206
equivalent transistor TT 2206
transistor tt 2206
TT 2206 transistor
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MRF162
Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance
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MRF162,
MRF162
AN215A
RF162
S21171
triode FU 33
MOTOROLA TRANSISTOR 712
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J141 mosfet
Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance
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MRF161,
MRF161
AN215A
J141 mosfet
MRF-161
fet j141
2191F
SELF vk200
k 575
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136y
Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up
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MRF136
MRF136Y
MRF136Y
AN215A
DL110
136y
2117 equivalent
p channel de mosfet
zt173
MOTOROLA S 5068
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mrf5015
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5015
AN215A,
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SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
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MRF134
68-ohm
AN215A
SELF vk200
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MRF1507
Abstract: PJ 0459
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1507 is designed fo r broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1507
AN215A,
MRF1507T1
PJ 0459
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15J02
Abstract: 15j02 rf Motorola motorola 15J02 RF MOSFETs 15J02 motorola MRF501 F5015
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5015 Advance Information The RF MOSFET Line M o to ro la P re fe rre d D ev ice RF P o w er Field E ffe c t T ransistor N-Channei Enhancement-Mode 15 W, 512 MHz, 12.5 VOLTS N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequen
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F5015
RF5015
AN215A,
MRF5015
15J02
15j02 rf Motorola
motorola 15J02
RF MOSFETs
15J02 motorola
MRF501
F5015
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistor MRF5035 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5035
AN215A,
MRF5035.
AN721,
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motorola MRF136
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N-Channel Enhancem ent-M ode MOSFETs . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
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RF136
MRF136Y
MRF136
RF136Y
MRF136Y
AN215A.
motorola MRF136
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SU 179 transistor
Abstract: s227
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen
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MRF5035
MRF5035
AN215A,
MRF5035.
AN721,
RF5035
SU 179 transistor
s227
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F5003
Abstract: 1N4734
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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F5003
MRF5003
MRFS003
AN215A,
F5003
1N4734
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C1C14
Abstract: Motorola AR 164
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5035
AN215A,
C1C14
Motorola AR 164
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5015 N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device
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MRF5015
AN215A,
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