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    MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS Search Results

    MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet class d

    Abstract: PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier
    Text: Order this document by AN860/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN860 POWER MOSFETs versus BIPOLAR TRANSISTORS Prepared by: Helge O. Granberg Sr. Staff Engineer What is better, if anything, with the power FETs if we can get a bipolar transistor with an equal power rating for less


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    AN860/D AN860 mosfet class d PUSH PULL MOSFET DRIVER watts amplifier RF CLASS B FET MOSFET Granberg all mosfet vhf power amplifier narrow band AN860 MC10198 150 watt amplifier advantages and disadvantages all mosfet vhf power amplifier CLASS AB MOSFET RF amplifier PDF

    MPF102 JFET

    Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory


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    AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet PDF

    J600 MOSFET

    Abstract: uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors
    Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    MRF176GU/D MRF176GU MRF176GV MRF176GU J600 MOSFET uhf tv power transistor 250w cgs resistor c7 j310 fet RF transformer turn ratio 12 fet j310 planar transformer theory AN211A MRF176 Nippon capacitors PDF

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


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    AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF176GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    MRF176GU/D MRF176GU MRF176GV MRF176GU MRF176GU/D* PDF

    J50 mosfet

    Abstract: J119 fet transistor k 2723 J892 J168 J119 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136 MRF136 AN215A. J50 mosfet J119 fet transistor k 2723 J892 J168 J119 transistor PDF

    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


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    AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    MRF175LU/D MRF175LU MRF175LV 10orola MRF175LU MRF175LU/D* PDF

    inductor vk200

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* inductor vk200 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor PDF

    MOTOROLA LINEAR HF

    Abstract: MRF175LV Nippon capacitors MRF175
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LV MRF175LU/D* MRF175LU/D MOTOROLA LINEAR HF Nippon capacitors MRF175 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* PDF

    motorola AN211A

    Abstract: "RF MOSFETs" zener motorola VK20019-4B 1N5925A AN211A AN721 MRF173 MRF173CQ VK200
    Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of


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    MRF173/D MRF173 MRF173CQ MRF173 motorola AN211A "RF MOSFETs" zener motorola VK20019-4B 1N5925A AN211A AN721 MRF173CQ VK200 PDF

    VK200 20/4B inductor

    Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* VK200 20/4B inductor VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LV VK200 Nippon capacitors PDF

    6a3 diode zener

    Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
    Text: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.


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    MRF136/D MRF136 6a3 diode zener 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF173 N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of


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    MRF173/D MRF173 MRF173/D* PDF

    MOSFET J220

    Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    MRF175GU/D MRF175GU MRF175GV MRF175GU MRF175GU/D* MOSFET J220 planar transformer theory arco 404 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A PDF

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


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    namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet PDF

    MRF148

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -1 7 6 M H z N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d esigned for pow er am plifier applications in industrial, c o m m e r­ cial and am ateur radio equipm ent to 1 75 MHz.


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    Granberg

    Abstract: PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages
    Text: AN-860 Application Note POWER MOSFETs versus BIPOLAR TRANSISTORS By Helge 0 . Granberg Sr. Staff Engineer Motorola Semiconductor Products, Inc. W hat is better, if anything, with the power FETs if we can get a bipolar tran sisto r w ith an equal power rating for less th an half the price?


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    AN-860 AN86Q/D AN860/D Granberg PUSH PULL MOSFET DRIVER watts AN-860 FET small signal transistors motorola mosfet class d MC10198 all mosfet vhf power amplifier 300 watt mosfet amplifier class AB all mosfet vhf power amplifier narrow band 150 watt amplifier advantages and disadvantages PDF

    MRF173

    Abstract: RF MOSFETs 1150 RC NETWORK bourns vk200* FERROXCUBE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of


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    MRF173 MRF173CQ MRF173/CQ MRF173CQ RF MOSFETs 1150 RC NETWORK bourns vk200* FERROXCUBE PDF

    uhf 150w mosfet

    Abstract: PS1517 25 ohm semirigid
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistors MRF176GU MRF176GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    MRF176GU MRF176GV MRF176G MRF176GU MRF176GV uhf 150w mosfet PS1517 25 ohm semirigid PDF

    planar transformer theory

    Abstract: Unelco
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Fie ld -E ffe ct Transistors MRF176GU M RF176GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    MRF176GU MRF176GV MRF176G MRF176 MRF176GU MRF176GV planar transformer theory Unelco PDF

    zener diode c16 ph

    Abstract: ph c15 zener
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF176GU MRF176GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    MRF176GU RF176GV MRF176G RF176 MRF176GU MRF176GV zener diode c16 ph ph c15 zener PDF

    RF MOSFETs

    Abstract: "RF MOSFETs"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz


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    RF173* RF173CQ MRF173/CQ. AN721, MRF173 MRF173CQ RF MOSFETs "RF MOSFETs" PDF