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MACOM MRF175GV RF MOSFET 28V 375-04
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF175GV	Tray			10	1 - 10 $204 100 $204 1000 $204 10000 $204	Buy Now
Mouser Electronics	MRF175GV					1 - 10 $216.7 100 $216.7 1000 $216.7 10000 $216.7	Get Quote
Richardson RFPD	MRF175GV		3		1	1 $226.2 10 $226.2 100 $226.2 1000 $226.2 10000 $226.2	Buy Now

MRF175GV Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF175GV	Advanced Semiconductor	RF POWER FIELD-EFFECT TRANSISTOR	Original	PDF
MRF175GV	M/A-COM	200 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FET	Original	PDF
MRF175GV	M/A-COM	RF FETs, Discrete Semiconductor Products, FET RF 2N-CH 28V 100MA 375-04	Original	PDF
MRF175GV	Motorola	N-CHANNEL MOS BROADBAND RF POWER FETs	Original	PDF
MRF175GV	NXP Semiconductors	PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS	Original	PDF
MRF175GV	Tyco Electronics	TRANS MOSFET N-CH 65V 26A 5P-218	Original	PDF
MRF175GV	Unknown	FET Data Book	Scan	PDF

MRF175GV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: , L na. l£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull	Original	MRF175GU MRF175GV	PDF
planar transformer theory Abstract: G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid Text: Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	Original	MRF175GU/D MRF175GU MRF175GV planar transformer theory G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid	PDF
mrf175gv Abstract: No abstract text available Text: MRF175GV RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. MAXIMUM RATINGS ID 26 A VDSS 65 V PDISS 400 W @ TC = 25 C	Original	MRF175GV MRF175GV	PDF
MOSFET J220 Abstract: planar transformer theory arco 404 MRF175GU 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	Original	MRF175GU/D MRF175GU MRF175GV MRF175GU MRF175GU/D* MOSFET J220 planar transformer theory arco 404 200 watt hf mosfet MRF175GV rf push pull mosfet power amplifier VK200 20/4B inductor vk200 ferrite bead AN211A	PDF
"RF MOSFET" Abstract: mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures Text: MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state	Original	MRF175GU MRF175GV 200/150W, 500MHz, "RF MOSFET" mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures	PDF
VK200 INDUCTOR Abstract: Nippon capacitors Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	Original	MRF175GU/D MRF175GV MRF175GU MRF175GU MRF175GV MRF175GU/D VK200 INDUCTOR Nippon capacitors	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
MHW707-2 Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar	Original	714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861	PDF
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet	PDF
MRF648 Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422 Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137	Original	2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MRF648 TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422	PDF
MRF648 Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC	Original	2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
smr-3822 Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM	Original	Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter	PDF
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Text: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode	PDF

MRF140 Abstract: mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546 Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 BLF542 MRF160 BLF404 BLF521 MRF158 BLF368 MRF141G BLF278 Motorola Philips	Original	BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF140 mrf151g 300 blf245 MRF174 "cross-reference" motorola MRF150 04 150 MRF150 MRF157 SOT123 BLF546	PDF
SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier	PDF
mosfet te 2304 Abstract: MRF175GU hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory MRF176 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	OCR Scan	MRF175GV MRF175GU MRF175G MRF176 MRF175GU MRF175GV mosfet te 2304 hf power transistor mosfet transistor te 2305 TOROIDS Design Considerations planar transformer theory	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	OCR Scan	RF175GV MRF175GU MRF175G MRF176 MRF17SGU MRF175GV	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239	PDF
0400X0 Abstract: No abstract text available Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M RF175GV MRF175GU The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode . . . designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of	OCR Scan	MRF175GV MRF175GU MRF175G MRF176 0400X0	PDF
chw marking sot23 Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu	OCR Scan		PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
J360 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	OCR Scan	MRF175GV MRF175GU MRF175GU RF175GV MRF175G MRF175GV J360	PDF

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MACOM MRF175GV

MRF175GV Datasheets (7)

MRF175GV Datasheets Context Search

Untitled

planar transformer theory

mrf175gv

MOSFET J220

"RF MOSFET"

VK200 INDUCTOR

MC68B21CP

MHW707-2

MRF660

MRF648

MRF648

2a258 transistor

smr-3822

filter for GPS spice

MRF140

SIT Static Induction Transistor

mosfet te 2304

Untitled

Motorola transistors MRF 947

2N4427 equivalent bfr91

0400X0

chw marking sot23

MHW721A2

J360