MOTOROLA TRANSISTOR BC 457 Search Results

MOTOROLA TRANSISTOR BC 457 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA TRANSISTOR BC 457 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
c 3421 transistor Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability	Original	BU208A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 c 3421 transistor BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA	PDF
2sc1943 circuit diagram Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,	Original	BU323Z TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2sc1943 circuit diagram TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic	PDF
automotive ignition tip162 Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.	Original	BU323A BU323A 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B automotive ignition tip162 BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326	PDF
automotive ignition tip162 Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —	Original	BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000	PDF
ST T4 3580 Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc	Original	MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714	PDF
MJL21194 equivalent Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.	Original	MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications	PDF
BU108 Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS	Original	2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100	PDF
2SC124 Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS	Original	2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100	PDF
IR3001 Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c	PDF
automotive ignition tip162 Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.	Original	MJ10012 MJH10012 MJH10012 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A automotive ignition tip162 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295	PDF
2SC1831 Abstract: BUV18A mje15033 replacement 2SC1903 2N5037 SDT7605 SDT9202 IR-6060 2SC1517 2SA1046 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.	Original	2N3442 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1831 BUV18A mje15033 replacement 2SC1903 2N5037 SDT7605 SDT9202 IR-6060 2SC1517 2SA1046	PDF
BU108 Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A	Original	BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100	PDF
BU108 Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A	Original	BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent	PDF
BU108 Abstract: BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •	Original	TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100	PDF

2N5686 motorola Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.	Original	2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100	PDF
2SA70 Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit	Original	2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100	PDF
transistor MJE243 equivalent Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	MJE243, MJE253 MJE243* MJE253* TIP73B TIP74 TIP74A TIP74B transistor MJE243 equivalent mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100	PDF
TIP41 TRANSISTOR REPLACEMENT Abstract: TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* PNP MJD42C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • • SILICON	Original	MJD41C* MJD42C* TIP41 TIP42 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP41 TRANSISTOR REPLACEMENT TIP42 338 npn dpak BU326 TIP42 amplifier BU108 BU100	PDF
3904 Transistor Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications	Original	MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint	PDF
MJ15015 TRANSISTOR REPLACEMENT GUIDE Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power	Original	2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051	PDF
2SA1046 Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc	Original	2N5883 2N5884* 2N5885 2N5886* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA1046 BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement	PDF
MJ14003 equivalent Abstract: BU108 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes	Original	MJ14002* MJ14001 MJ14003* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ14003 equivalent BU108 BU326 BU100	PDF
Motorola case 77 Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc	Original	MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100	PDF
transistors BC 557C Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555 Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and	OCR Scan		PDF

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MOTOROLA TRANSISTOR BC 457 Search Results

MOTOROLA TRANSISTOR BC 457 Result Highlights (5)

MOTOROLA TRANSISTOR BC 457 Datasheets Context Search

c 3421 transistor

2sc1943 circuit diagram

automotive ignition tip162

automotive ignition tip162

ST T4 3580

MJL21194 equivalent

BU108

2SC124

IR3001

automotive ignition tip162

2SC1831

BU108

BU108

BU108

2N5686 motorola

2SA70

transistor MJE243 equivalent

TIP41 TRANSISTOR REPLACEMENT

3904 Transistor

MJ15015 TRANSISTOR REPLACEMENT GUIDE

2SA1046

MJ14003 equivalent

Motorola case 77

transistors BC 557C